2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm (inches) 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084) ±100V N-CHANNEL 14 8 1 7 ID(cont) RDS(on) P-CHANNEL 1A Ω 0.7Ω -0.75A Ω 1.4Ω FEATURES • AVALANCHE ENERGY RATED 1.422 ± 0.102 (0.056 ± 0.004) • HERMETICALLY SEALED 2.54 (0.100) • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS • FOR AUTOMATIC INSERTION N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL 1—Drain 1 2—Source 1 3—Gate 1 5—Gate 2 6—Source 2 7—Drain 2 8—Drain 3 9—Source3 10—Gate 3 12—Gate 4 13—Source 4 14—Drain 4 • SIMPLE DRIVE REQUIREMENTS • EASE OF PARALLELING • 2 N-CHANNEL/2 P-CHANNEL CO-PACKAGED HEXFETS ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) N-CHANNEL VGS ID ID IDM PD EAS dv/dt TJ , Tstg RθJC RθJCA Gate – Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25°C) Continuous Drain Current (VGS = 10V , Tcase = 100°C) Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient ±20V 1.A 0.6A 4A 1.4W 0.011W/°C 75mJ 5.5V/ns –55 to 150°C P-CHANNEL ±20V -0.75A -0.5A -3A 1.4W 0.011W/°C 75mJ -5.5V/ns –55 to 150°C 6.25°C/W 175°C/W Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 25V , L ≥ 112mH , RG = 25Ω , Peak IL = 1A , Starting TJ = 25°C 3) @ ISD ≤ 1A , di/dt ≤ 75A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 24Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 4/99 2N7336 IRFG6110 ELECTRICAL CHARACTERISTICS FOR N-CHANNEL (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ VGS = 0 ID = 1mA Min. Typ. Max. V 100 Reference to 25°C V / °C 0.13 Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 0.6A 0.70 Resistance VGS = 10V ID = 1A 0.80 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2 gfs Forward Transconductance VDS ≥ 15V IDS = 0.60A 0.86 IDSS Zero Gate Voltage Drain Current VGS = 0 VDS = 0.8VDSS 25 TJ = 125°C 250 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 RDS(on) Unit 4 Ω V (Ω) S(Ω µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 180 Coss Output Capacitance VDS = 25V 82 Crss Reverse Transfer Capacitance f = 1MHz 15 Qg Total Gate Charge VGS = 10V Qgs Gate – Source Charge VDS = 0.5VDS Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time ID = 1A pF 15 7.5 nC 7.5 20 VDD = 50V 25 ID = 1A 40 RG = 24Ω ns 40 SOURCE – DRAIN DIODE CHARACTERISTICS IS 1 Continuous Source Current 2 ISM Pulse Source Current VSD Diode Forward Voltage 1 trr Reverse Recovery Time IF = 1A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 4.0 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 6.0 4 IS = 1.0A TJ = 25°C VGS = 0 TJ = 25°C A 1.5 V 200 ns 0.83 µC Negligible nH Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 4/99 2N7336 IRFG6110 ELECTRICAL CHARACTERISTICS FOR P-CHANNEL (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ VGS = 0 ID = –1mA Min. Typ. Max. V –100 Reference to 25°C V / °C 0.098 Breakdown Voltage ID = –1mA Static Drain – Source On–State Resistance 1 VGS = –10V ID = –0.50A 1.4 VGS = –10V ID = –0.75A 1.73 VGS(th) Gate Threshold Voltage 1 VDS = VGS ID = –250µA –2 gfs Forward Transconductance VDS ≥ –15V IDS = –0.50A 0.67 IDSS Zero Gate Voltage Drain Current VGS = 0 VDS = 0.8VDSS –25 TJ = 125°C –250 IGSS Forward Gate – Source Leakage VGS = -20V –100 IGSS Reverse Gate – Source Leakage VGS = 20V –100 RDS(on) Unit –4 Ω V (Ω) S(Ω µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 200 Coss Output Capacitance VDS = –25V 85 Crss Reverse Transfer Capacitance f = 1MHz 30 Qg Total Gate Charge VGS = –10V Qgs Gate – Source Charge VDS = 0.5VDS Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time ID = –0.75A pF 15 7 nC 8 30 VDD = –50V 60 ID = –0.75A 40 RG = 24Ω ns 40 SOURCE – DRAIN DIODE CHARACTERISTICS IS –0.75 Continuous Source Current 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = –0.75A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ –50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 4.0 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 6.0 –3 IS = –0.75A TJ = 25°C VGS = 0 TJ = 25°C A –5.5 V 200 ns 90 µC Negligible nH Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 4/99