MCA104 MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) DESCRIPTION The MCA104 is a ceramic surface mount transistor array 8 .8 9 (0 .3 5 0 ) 0 .3 0 (0 .0 1 2 ) R a d . 4 p lc s 1 .2 7 (0 .0 5 0 ) ty p . designed for high reliability applications. 1 .1 4 ± 0 .1 5 (0 .0 4 5 ± 0 .0 0 6 ) It contains 2 NPN Bipolar Transistors and 2 PNP Bipolar 0 .6 5 (0 .0 2 5 ) ty p . 7 .2 4 (0 .2 8 5 ) Transistors. ! " $ # % & ' FEATURES 0 .2 3 (0 .0 0 9 ) R a d . 1 8 p lc s • Ceramic Surface Mount Package. • Screening Options Available & % $ # " ! NPN DEVICES 1 .1 4 (0 .0 4 5 ) ty p 1 .4 0 (0 .0 5 5 ) N o m . 2 .5 4 (0 .1 0 0 ) • VCBO = 75V • VCBO = 400V • IC = 600mA Pinout: NPN 2 = E1 3 = B1 4 = C1 PNP DEVICES PNP 6 = C2 7 = B2 8 = E2 PNP 11 = E3 12 = B3 13 = C3 NPN 15 = C4 16 = B4 17 = E4 • VCBO = 60V • VCEO = 60V • IC = 600 mA 1,5,9,10,14,18 NO CONNECTION ABSOLUTE MAXIMUM RATINGS NPN Channel PNP Channel VCBO Collector - Base Voltage 75V -60V VCEO Collector - Emitter Voltage 40V - 60V VEBO Emitter - Base Voltage 6 -5 IC Collector Current (per device) 600mA 600mA PD Power Dissipation (per device) 350mW 350mW sj-a Thermal Resistance (junction to ambient) Tj,Tstg Storage, Junction Temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 350°C -55 to +200°C Prelim. 4/00 MCA104 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. NPN DEVICES Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA 40 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA 75 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10mA IC = 0 6 V ICEX* Collector Cut-off Current (IC = 0) IB = 0 VCE = 60V 10 nA ICBO* Collector – Base Cut-off Current IE = 0 VCB = 60V 10 nA 10 m IEBO* Emitter Cut-off Current (IC = 0) IC = 0 VEB = 3V (off) 10 nA IBL* Base Current VCE = 60V VEB = 3V (off) 20 nA VCE(sat)* Collector – Emitter Saturation Voltage IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1 VBE(sat)* Base – Emitter Saturation Voltage IC = 150mA IB = 15mA IC = 500mA IC = 50mA IC = 0.1mA VCE = 10V 35 IC = 1mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = –55°C IC = 10mA VCE = 10V 35 IC = 150mA VCE = 10V 100 IC = 150mA VCE = 1V 50 IC = 500mA VCE = 10V 40 hFE* TC = 125°C DC Current Gain * Pulse test tp = 300ms , d £ 0.6 A V 1.2 V 2 — 300 2% DYNAMIC CHARACTERISTICS NPN DEVICES (Tcase = 25°C unless otherwise stated) Parameter Test Conditions VCE = 20V Min. f =100MHz Typ. Max. Unit fT Transition Frequency IC = 20mA Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 0.5V IC = 0 f = 1.0MHz 30 pF hfe Small Signal Current Gain MHz IC = 1mA VCE = 10V f = 1kHz 50 300 IC = 10mA VCE = 10V f = 1kHz 75 375 SWITCHING CHARACTERISTICS (RESISTIVE LOAD) Parameter 300 (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit td Delay Time VCC = 30V VBE = 0.5V (off) 10 ns tr Rise Time IC1 = 150mA IB1 = 15mA 25 ns ts Storage Time VCC = 30V IC = 150mA 225 ns tf Fall Time 60 ns IB1 = IB2 = 15mA fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 4/00 MCA104 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PNP DEVICES Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA –60 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA –60 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10mA IC = 0 –5 V ICEX* Collector Cut-off Current VCE = 30V VBE = 0.5V 50 ICBO* Collector – Base Cut-off Current IE = 0 VCB = 50V 0.01 IBEO Base Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* TC = 125°C DC Current Gain * Pulse test tp = 300ms , d £ nA m 10 VCE = 30V VBE = 0.5V 50 IC = 150mA IB = 15mA –0.4 IC = 500mA IB = 50mA –1.6 IC = 150mA IB = 15mA –1.3 IC = 500mA IB = 50mA –2.6 IC = 0.1mA VCE = 10V 75 IC = 1mA VCE = 10V 100 IC = 10mA VCE = 10V 100 IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 A nA V V — 300 2% DYNAMIC CHARACTERISTICS Parameter PNP DEVICES (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 20V f = 100MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 2V IC = 0 f = 1.0MHz 30 pF ELECTRICAL CHARACTERISTICS Parameter 200 MHz (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit ton Turn-on Time VCC = 30V 26 45 td Delay Time IC = 150mA 6.0 10 tr Rise Time IB1 = 15mA 20 40 toff Turn-off Time VCC = 6V 70 100 ts Storage Time IC = 150mA 50 80 tf Fall Time IB1 = IB2 = 15mA 20 30 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk ns ns Prelim. 4/00