GL4910 GL4910 Side View Type Infrared Emitting Diode for Camera AF (Automatic Focusing) ■ Features ■ Outline Dimensions 1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. φ 0.32 mm) 5.0 ± 0.2 Gate burr (2.5 ) 2.15 0.3 MIN. 2 1 2.54 8˚ 8˚ ■ Absolute Maximum Ratings Symbol IF I FM VR Topr Tstg Tsol epoxy resin 1 (Chip position 8˚ : 2.65) 2 - 0.4 +- 2 1 Cathode 2 Anode * ( ) : Reference dimensions * Tolerance : ± 0.15 mm (Ta=25˚C) Rating 50 1 4 - 25 to + 60 - 40 to + 85 260 Unit mA A V ˚C ˚C ˚C 0.2 0.1 2.15mm Parameter Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature *2 Soldering temperature 8˚ transparent 0.2 8˚ 3.75 ± 8˚ 8˚ 8˚ 2- 0.77 2 - 0.45 +- 0.2 0.1 1. Cameras 0.5 Pink R1.75 ± 0.1 17.15 +- 1.5 1.0 ■ Applications 1.5 2- 0.28 0.8 * Expansion range on lens surface of infrared emitted from chips 0.8 Chip center Solder dipping range 3. Low peak forward voltage type (Peak forward voltage V FM : TYP. 1.7V) 2.0 ± 0.2 0.8 0.4 MAX. 0.8 2. Uniform emission intensity on chip emitting surface (Unit : mm) 4.0 ± 0.2 120 µ s IFM 500 µ s 32ms (64 pulses) 1s (1 cycle) Soldering area *1 30,00 cycles max. on pulse conditions shown in the right drawing *2 For 5 seconds at the position of 2.15 mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GL4910 ■ Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength Half intensity wavelength Half intensity angle Terminal capacitance (Ta=25 ˚C) Symbol VF V FM IR *3 Φ e λp ∆ λ ∆ θ Ct Conditions I F = 50mA I FM = 300mA, t = 10ms V R = 1V I FM = 300mA, t = 10ms I F = 50mA I F = 50mA I F = 50mA V R = 0, f = 1MHZ MIN. 4.2 - TYP. 1.55 1.7 - MAX. 1.7 1.95 100 - 9 850 35 ± 32 80 *3 Emission output to effective angle ± 25˚ Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Peak Forward Current vs. Duty Ratio 60 Pulse width<= 100 µ s Ta= 25˚C (mA) 30 20 10 0 - 25 1000 FM 40 Peak forward current I Forward current I F (mA) 50 0 25 50 60 75 100 Ambient temperature Ta (˚C) 125 100 10 1 10 -4 10 -3 10 -2 Duty ratio 10 -1 1 Unit V V µA mW nm nm ˚ pF GL4910 Fig. 3 Spectral Distribution Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 900 100 I F =const Peak emission wavelength λ p (nm) Relative radiant intensity (%) I F =50mA Ta=25˚C 80 60 40 20 875 850 825 800 - 25 0 720 740 760 780 800 820 840 860 880 900 920 940 960 0 25 50 75 85 Ambient temperature T a (˚C) Wavelength λ (nm) Fig. 5 Forward Current vs. Forward Voltage 1000 Fig. 6 Relative Radiant Flux vs. Ambient Temperature 10 Relative radiant flux Forward current I F (mA) I F =const 100 50˚C -25˚C 0˚C 25˚C 60˚C 10 1 0 0.5 1 2 1.5 1 0.1 2.5 - 25 Forward voltage V F (V) 25 0 50 Fig. 7 Radiant Flux vs. Forward Current 100 Ta=25˚C Relative radiant intensity (%) Radiant flux Φ e (mW) Ta=25˚C 10 Pulse (pulse width <= 100 µs) 0.1 0.01 1 10 100 Forward current I F (mA) 85 Fig. 8 Relative Radiant Intensity vs. Distance 100 1 75 Ambient temperature T a (˚C) 1000 10 1 0.1 0.1 1 10 Distance to detector (mm) 100 GL4910 Fig. 9 Radiation Diagram - 20˚ - 10˚ 0˚ (Ta = 25˚C ) 10˚ 100 - 40˚ - 50˚ - 60˚ - 70˚ Relative radiant intensity (%) - 30˚ 30˚ 80 60 40˚ 50˚ 40 60˚ 20 - 80˚ - 90˚ 20˚ 70˚ 80˚ 0 90˚ Angular displacement θ ● Please refer to the chapter "Precautions for Use". (Page 78 to 93)