GL496 GL496 High Speed Infrared Emitting Diode ■ Features ■ Outline Dimensions (Unit : mm) 1. High speed response (response frequency : 40MHz) 2. Peak emission wavelength λ p : TYP. 880 mm 2-C0.5 1.15 3.0 Transparent epoxy resin 1.5 4.0 3. Half intensity angle ∆θ : ± 22˚ 4. Lead bending type may be used. 1.4 R-1.25 (1.7) 17.5 ■ Applications 1. AV equipment 2. Personal computers 0.45 1 0.4 2 MIN0.5 3. Portable information terminal equipment 1.55 2.8 (2.54) 1 2 1 Anode 2 Cathode ■ Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperature Storage temperature *2 Soldering temperature Symbol Rating IF 50 0.5 I FM 4 VR 87.5 P - 25 to + 85 Topr Tstg - 40 to + 90 260 Tsol (Ta=25˚C) Unit mA A V mW ˚C ˚C ˚C *1 Pulse width 100 µ s, Duty ratio=0.01 *2 For MAX. 5 seconds at the position of 1.4 mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GL496 ■ Electro-optical Characteristics (Ta=25 ˚C) Parameter Forward voltage Peak forward voltage Reverse current *3 Radiant intensity Radiant flux Peak emission wavelength Half intensity wavelength Terminal capacitance *4 Response frequency Half intensity angle Symbol VF VFM IR IE ΦE λp ∆ λ Ct fc ∆θ Conditions I F = 50mA IFM = 0.5A V R = 3V I F = 50mA I F = 50mA I F = 50mA I F = 50mA VR = 0V,f = 1MHz I F = 50mA + 10mAp-p I F = 50mA MIN. 3.0 850 - TYP. 1.55 2.6 10.0 12 880 50 60 40 ± 22 MAX. 1.75 3.6 10 900 - *3 Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of the lens portion into 1 sr or all those emitted from the light emitting diode. *4 Frequency to bring about -3dB reduction of modulated radiant intensity from 100kHz Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Peak Forward Current vs. Duty Ratio 60 Pulse width <=100 µs T a = 25˚C 5000 (mA) FM 40 Peak forward current I Forward current I F (mA) 50 30 20 10 0 - 40 - 20 0 20 25 40 60 Ambient temperature T a (˚C) 80 85 100 1000 500 100 50 10 10 - 4 10 - 3 10 - 2 Duty ratio 10 - 1 1 Unit V V µA mW/sr mW nm nm pF MHz ˚ GL496 Fig. 3 Spectral Distribution Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 930 100 IF=const Peak emission wavelength λ p (nm) Relative radiant intensity (%) I F =50mA Ta=25˚C 80 60 40 20 0 720 760 800 840 880 920 960 905 880 855 830 - 25 1000 1040 Wavelength λ (nm) 0 25 50 75 85 Ambient temperature T a (˚C) Fig. 5 Forward Current vs. Forward Voltage Fig. 6 Relative Radiant Flux vs. Ambient Temperature 10 1000 Relative radiant flux 100 Forward current I F (mA) IF=const 25˚C Ta=75˚C 10 0˚C -25˚C 50˚C 1 0 0.5 1 1.5 2 1 0.1 - 25 2.5 Forward voltage V F (V) 0 25 50 Fig. 7 Radiant Intensity vs. Forward Current 100 Ta=25˚C 100 10 DC Pulse (pulse width <=100 µs) 1 1 10 100 Forward current I F (mA) 1000 Relative radiant intensity (%) Ta=25˚C Radiant intensity I E ( mW/sr ) 85 Fig. 8 Relative Radiant Intensity vs. Distance 1000 0.1 75 Ambient temperature T a (˚C) 10 1 0.1 0.1 1 10 Distance to detector (mm) 100 GL496 Fig. 9 Relative Radiant Intensity vs. Frequency Fig. 10 Relative Collector Current vs. Distance (Detector : PT414PI) 100 3 IF=50mA Ta=25˚C Ta=25˚C Relative collector current (%) Relative radiant intensity (dB) IF=50mA+10mAp-p 0 -3 -6 -9 0.1 1 10 40 100 - 20˚ - 10˚ 0˚ ( Ta = 25˚C) 10˚ 20˚ 100 - 40˚ - 50˚ - 60˚ - 70˚ 30˚ Relative radiant intensity (%) - 30˚ 80 60 40˚ 50˚ 40 60˚ 20 - 80˚ 70˚ 80˚ - 90˚ 1 0.1 0.1 1 10 100 Distance between emitter and detector d (mm) Frequency f (MHz) Fig. 11 Radiation Diagram 10 90˚ 0 Angular displacement θ ● Please refer to the chapter "Precautions for Use". (Page 78 to 93)