SHARP GL610T

GL610T
GL610T
Ultra-compact Chip Part Type
Infrared Emitting Diodes
■ Features
■ Outline Dimensions
1. Ultra-compact type (1.6 x 0.8 x 0.8 mm)
2. Thin type (thickness : 0.8 mm)
0.8
0.3
1.6
(0.2)
0.8
3. Taped-packed type (4,000 pieces/reel)
4. Leadless type
(Unit : mm)
2
Chip position
1
■ Applications
1.2
1. Compact and thin remote controllers
2. Tape end detection of VCRs and VCR cameras
3. Power source for car navigator touch panels
4. Other portable equipment
0.3
0.5
1.0
(0.3)
(0.3)
* Plating area
* Terminal connection
1 Anode
2 Cathode
1
Chip side mark
■ Absolute Maximum Ratings
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
Symbol
Rating
IF
50
500
I FM
VR
6
150
P
- 25 to + 85
Topr
- 25 to + 100
Tstg
260
Tsol
2
* Tolerance : ± 0.1mm
(Ta=25˚C)
Unit
mA
mA
V
mW
˚C
˚C
˚C
*1 Pulse width <= 100µ s, Duty ratio=0.01
*2 Hand soldering temperature, for MAX. 3 seconds
■ Electro-optical Characteristics
Parameter
Forward voltage
*1
Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
(Ta=25 ˚C)
Symbol
VF
V FM
IR
Φe
λp
Conditions
I F = 50mA
I FM = 0.5A
V R = 3V
I F = 20mA
I F = 20mA
MIN.
0.7
-
TYP.
1.3
2.2
2.0
950
MAX.
1.5
3.5
10
-
Unit
V
V
µA
mW
nm
Half intensity wavelength
∆λ
I F = 20mA
-
40
-
nm
Response frequency
fc
∆θ
I F = 20mA
-
300
± 60
-
kH Z
˚
Half intensity angle
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”