GP1L55 GP1L55 High Sensitivity Photointerrupter ■ Features ■ Outline Dimensions 1. Compact package ( Case height: 8mm ) 2. High sensing accuracy ( Slit width•••Detector: 0.15mm, Emitter: 0.5mm ) 3. Easy positioning to PWB with positioning pin 5.0 Internal connection diagram AA’ section ( Slit width of emitter side ) 0.5 11.0 Output 2.0 A’ 8.0 B’ 4 - 0.45 +- 0.3 0.1 (2.54) (7.4) 10.2 ± 0.15 ■ Absolute Maximum Ratings Input 1 2 - 0.7 4 - 0.4 +0.3 - 0.1 4 12.0MIN. Detector center (5.5) 1. Floppy disk drives 2. VCRs, Cassette decks 3. Optoelectronic switches, electronic counters, edge sensors. 2 A GP1L55 ■ Applications B 3 BB ’ section ( Slit width of detector side ) 0.15 ± 0.07 + 2.0 - 0.2 0.1 C1.0 Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *2 Soldering temperature ( Unit : mm ) 4 1 3 2 2 - φ 0.7 ± 0.05 Rating 50 1 6 75 35 6 40 75 - 25 to + 85 - 40 to + 100 260 Anode Cathode Collector Emitter *Unspecified tolerances shall be as follows ; Dimensions(d) Tolerance d<=6.0 ± 0.1 6.0< d<=18.0 ± 0.2 *( ): Reference dimensions ( Ta = 25˚C ) Symbol IF I FM VR P V CEO V ECO IC PC T opr T stg T sol 1 2 3 4 Unit mA A V mW V V mA mW ˚C ˚C ˚C *1 Pulse width<=100 µ s, Duty ratio= 0.01 *2 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1L55 ■ Electro-optical Characteristics ( Ta = 25˚C ) Parameter Forward voltage Peak forward voltage Reverse current Collector dark current Collector Current Collector-emitter saturation voltage Rise time Response time Fall time Input Output Transfer characteristics Symbol VF V FM IR I CEO Ic Conditions I F = 20mA I FM = 0.5A V R = 3V V CE = 10V I F = 2mA, VCE = 2V MIN. 0.6 TYP. 1.2 3 - V CE(sat) I F = 4mA, I C = 0.6mA tr tf V CE = 2V, I C = 10mA R L = 100 Ω Fig. 1 Forward Current vs. Ambient Temperature Collector power dissipation P C ( mW ) Forward current I F ( mA ) 40 30 20 10 0 -25 0 25 50 75 85 Ambient temperature T a ( ˚C) V - 80 70 400 350 µs µs 80 75 60 40 20 0 25 50 75 85 Ambient temperature T a ( ˚C) 100 1000 200 T a = 75˚C 50˚C 100 25˚C 0˚C - 25˚C F ( mA ) 500 Forward current I ( mA ) 1 Fig. 4 Forward Current vs. Forward Voltage Pulse width<=100µ s T a = 25˚C 2000 FM - 100 0 -25 100 Fig. 3 Peak Forward Current vs. Duty Ratio Peak forward current I - 120 50 500 Unit V V µA A mA Fig. 2 Collector Power Dissipation vs. Ambient Temperature 60 1000 - MAX. 1.4 4 10 10 - 6 - 200 100 50 20 10 5 50 2 20 5 10 -2 2 5 10 -1 Duty ratio 2 5 1 1 0 0.5 1 1.5 2 2.5 Forward voltage V F ( V) 3 3.5 GP1L55 Fig. 5 Collector Current vs. Forward Current Fig. 6 Collector Current vs. Collector-emitter Voltage 22 IF= 5mA VCE= 2V T a = 25˚C 50 P c ( MAX. ) 18 40 30 20 10 4mA 16 Collector current Ic ( mA ) Collector current Ic ( mA ) T a = 25˚C 20 14 3mA 12 10 2mA 8 6 4 1mA 2 0 0 0 5 10 15 20 Forward current I F ( mA ) 25 8 2 3 4 5 6 7 8 Collector-emitter voltage V CE ( V) 9 10 2.0 IF = 2mA V CE= 2V IF= 4mA IC= 0.6mA Collector-emitter saturation voltage VCE ( sat ) ( V) 7 6 5 4 3 2 1 0 - 25 1 Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig. 7 Collector Current vs. Ambient Temperature Collector current I C ( mA ) 0 0 25 50 75 Ambient temperature T a ( ˚C) 1.5 1 0.5 0 - 25 100 50 75 0 25 Ambient temperature T a ( ˚C) 100 Fig. 9 Response Time vs. Load Resistance 1000 V CE = 2V IC = 10mA T a = 25˚C 500 Test Circuit for Response Time Response time ( µ s ) 200 tr VCC 100 tf 50 RL Input R D 20 Input td Output Output 10% 90% td 10 tr 5 ts 2 1 1 2 5 10 20 50 100 200 Load resistance RL ( Ω ) 500 1000 ts tf GP1L55 Fig.10 Frequency Response Fig.11 Collector Dark Current vs. Ambient Temperature 10 - 4 V CE = 2V IC= 10mA T a = 25˚C -5 RL= 1kΩ - 10 ( A) 5 CEO 10 - 6 Collector dark current I Voltage gain AV ( dB ) 0 5 V CE= 10V 10 - 5 100Ω 10Ω - 15 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 5 5 10 4 2 5 10 5 2 10 - 11 - 25 10 6 5 Frequency f ( Hz ) + 0 ( Detector center ) 0 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 Shield distance L ( mm ) Relative collector current ( % ) Relative collector current ( % ) Detector 50 - - IF= 2mA V CE= 2V T a = 25˚C Shield 100 L ( Detector center ) IF= 2mA V CE= 2V T a = 25˚C Shield 100 Fig.13 Relative Collector Current vs. Shield Distance ( 2 ) Fig.12 Relative Collector Current vs. Shield Distance ( 1 ) 100 0 25 50 75 Ambient temperature T a ( ˚C) L 2 10 3 2 0 - 20 + Detector 50 0 -2 ■ Precautions for Use ( 1 ) In case of cleaning, use only the following type of cleaning solvent. Ethyl alcohol, Methyl alcohol, Isopropyl alcohol ( 2 ) As for other general cautions, refer to the chapter “ Precautions for Use ” . -1 0 1 Shield distance L ( mm ) 2