GP1L27 GP1L27 Subminiature, High Sensitivity Photointerrupter ■ Features ■ Outline Dimensions 1. Ultra-compact, high sensitivity ( CTR: MIN. 50% ) 2. PWB direct mounting type ( Unit : mm ) Internal connection diagram 4 ■ Applications 2 3 1. Cameras 2. Floppy disk drives 1 1 Anode 2 Cathode 3.9MAX. 0.9 4.0 5.1 4.0 ± 0.3(Light path ) (C0.3) (0.8) Slit width (C0.8) 4.0 (1.0) Rest of gate (2) 4.0MIN. 2.5 1.5 Center of light path 4 - 0.15 + 0 4 - 0.4 ❈ 2.54 ■ Absolute Maximum Ratings Output ❈ 2.54 4 1 3 2 *Tolerance:± 0.2mm *Burr's dimensions : 0.15MAX. *Rest of gate: 0.3MAX. *( ): Reference dimensions *The dimensions indicated by ❈ refer to those measured from the lead base. ( Ta = 25˚C ) Symbol IF VR P VCEO VECO IC PC Ptot T opr T stg Tsol Rating 50 6 75 35 6 40 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1mm or more Input Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature 3 Emitter 4 Collector Soldering area *1 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1L27 ■ Electro-optical Characteristics Parameter Forward voltage Reverse current Collector dark current Collector Current Collector-emitter saturation voltage Rise time Response time Fall time Input Output Transfercharacteristics ( Ta = 25˚C ) Symbol VF IR I CEO Ic VCE ( sat ) tr tf TYP. 1.2 80 70 MAX. 1.4 10 10 - 6 15 1.0 400 350 Unit V µA A mA V µs µs Fig. 2 Power Dissipation vs. Ambient Temperature 60 120 50 100 40 30 20 10 P tot P, P c 80 75 60 40 20 0 - 25 0 25 50 75 85 0 - 25 100 0 Ambient temperature T a ( ˚C ) 25 75 85 50 100 Ambient temperature Ta ( ˚C ) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 500 20 T a = 75˚C V CE= 2V T a = 25˚C 25˚C 0˚C - 25˚C 50˚C 100 Collector current I C ( mA ) 200 Forward current I F ( mA ) MIN. 0.5 - VCE = 2V, R L = 100 Ω I C = 10mA Power dissipation P ( mW ) Forward current I F ( mA ) Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 20mA VR = 3V VCE = 10V VCE = 2V, I F = 1mA I F = 2mA, I C = 0.5mA 50 20 10 5 15 10 5 2 1 0 0 0.5 1 1.5 2 2.5 Forward voltage VF ( V ) 3 3.5 0 1 2 3 4 Forward current I F ( mA ) 5 6 GP1L27 Fig. 5 Collector Current vs. Collector-emitter Voltage 5 T a = 25˚C I F = 1mA V CE= 2V 4 PC(MAX.) Collector current I C ( mA ) Collector current I C ( mA ) 28 26 24 22 20 18 16 14 12 10 Fig. 6 Collector Current vs. Ambient Temperature I F = 2.5mA 2mA 8 1.5mA 6 3 2 1 4 1mA 2 0 0.5mA 0 1 2 3 4 5 6 8 7 9 0 - 25 10 0 25 50 75 100 Ambient temperature T a ( ˚C ) Collector-emitter voltage VCE ( V ) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig. 8 Response Time vs. Load Resistance (V) I F = 2mA I C = 0.5mA VCE= 2V IC= 10mA Ta = 25˚C 200 0.8 tr 100 Response time ( µ s ) ( sat ) V CE Collector-emitter saturation voltage 1.0 0.6 0.4 50 tf 20 td 10 5 0.2 ts 2 0 - 25 1 0 25 50 75 100 5 10 20 50 100 200 500 1000 2000 Load resistance RL ( Ω ) Ambient temperature Ta ( ˚C ) Fig. 9 Collector Dark Current vs. Ambient Temperature Test Circuit for Response Time 10 - 4 5 V CE VCC Input RD RL Output Input Output 10% 90% td ts tr tf Collector dark current I CEO ( A ) 10 - 5 = 10V 5 10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 10 - 11 - 25 0 25 50 75 Ambient temperature Ta ( ˚C ) 100 GP1L27 - 0 ( Detector center ) 50 0 -2 + -1 0 1 Shield distance L ( mm ) 2 3 Relative collector current ( % ) Detector Shield I F = 1mA,V CE = 2V T a = 25˚C Shield 100 0 + Detector 50 0 -2 -1 0 1 2 Shield distance L ( mm ) ■ Precautions for Use ( 1 ) Please refrain from soldering under preheating and refrain from soldering by reflow. ( 2 ) As for other general cautions, refer to the chapter “ Precautions for Use” . 3 ( Detector center ) I F = 1mA, V CE = 2V T a = 25˚C L 100 Relative collector current ( % ) Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) L Fig.10 Relative Collector Current vs. Shield Distance ( 1 )