GP1S93 GP1S93 Subminiature Photointerrupter ■ Features ■ Outline Dimensions (Unit : mm) 1. Low height type (Height : 3.1 mm) 2. Wide gap type (Gap : 2.0 mm) Top View Internal connection diagram a 3. Detector side slit width : (0.3) mm 1 3 4 1. FDDs 2. Cameras (0.85) 2.0 3.1 (C0.4) Optical center S 4Z 3.6± 0.5 (C0.3) ❈ 3.55 3 2 0.4 ❈ 2.54 + 0.2 0.15 - 0.1 4 * Tolerance : ± 0.2 * ( ) : Reference dimensions * The dimensions indicated by ❈ refer to those measured from the lead base. 1 ■ Absolute Maximum Ratings Output (0.3) Slit width 3.4 2.3 3. Camera-integral VCRs Input Anode Collector Emitter Cathode a-a section 4.5 Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature 1 2 3 4 a ■ Applications 2 (Ta=25˚C) Symbol IF VR P VCEO VECO IC PC Ptot Topr Tstg Tsol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1mm or more Soldering area *1 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S93 ■ Electro-optical Characteristics Input Output Transfer characteristics (Ta=25˚C) Parameter Forward voltage Reverse current Dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR I CEO IC V CE(sat) tr tf Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 20mA V R = 3V V CE = 20V I F = 5mA, V CE = 5V I F = 10mA, I C = 40 µ A IC = 0.1mA, V CE = 5V, R L = 1k Ω MIN. 100 - TYP. 1.2 50 50 MAX. 1.4 10 1 x 10 - 7 400 0.4 150 150 Unit V µA A µA V µs µs Fig. 2 Power Dissipation vs. Ambient Temperature 60 120 50 100 Power dissipation P (mW) Forward current I F (mA) Total power dissipation 40 30 20 10 0 - 25 Input side power dissipation and 80 output side collector power dissipation 60 40 20 0 25 50 75 85 0 - 25 100 Ambient temperature Ta (˚C) 0 25 50 75 85 100 Ambient temperature Ta (˚C) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 500 T a= 75˚C 50˚C Forward current I F (mA) 1.0 25˚C 0˚C -25˚C 100 Collector current I C (mA) 200 50 20 10 5 VCE =5V Ta =25˚C 0.8 0.6 0.4 0.2 2 1 0 0.5 1 1.5 2 Forward voltage V F (V) 2.5 3 0 0 4 8 12 Forward current IF (mA) 16 20 GP1S93 Fig. 6 Relative Collector Current vs. Ambient Temperature Fig. 5 Collector Current vs. Collector-emitter Voltage 2.0 120 IF=50mA Ta =25˚C Collector current I 100 Relative collector current (%) 30mA C (mA) 40mA 1.6 1.2 20mA 0.8 10mA 0.4 90 80 70 60 50 40 30 20 5mA 0 0 5 10 0 - 25 10 Collector-emitter voltage VCE (V) 10 50 75 85 -6 5 VCE= 20V 2 0.16 10 Dark current I CEO (A) Collector-emitter saturation voltage V CE(sat) (V) 25 Fig. 8 Dark Current vs. Ambient Temperature IF =10mA IC =40 µ A 0.18 0 Ambient temperature Ta (˚C) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.20 IF=5mA VCE=5V 110 0.14 0.12 0.10 0.08 -7 5 2 10 -8 5 2 10 -9 5 0.06 2 0.04 - 25 0 25 50 10 75 85 Ambient temperature Ta (˚C) - 10 0 25 50 75 100 Ambient temperature Ta (˚C) Fig. 9 Response Time vs. Load Resistance Test Circuit for Response Time 1000 VCE =5V 500 IC =100µ A tr tf Response time (µs) Input VCC Input RD RL Output 100 10% Output 90% 50 td ts 10 5 1 0.1 1 5 10 Load resistance R L (kΩ ) 50 100 td ts tr tf GP1S93 Fig. 10 Detecting Position Characteristics (1) L=0 L 80 70 60 50 40 30 20 80 L=0 70 60 50 40 30 20 10 10 0 0 IF =5mA VCE =5V 90 Relative collector current (%) Relative collector current (%) 100 IF =5mA VCE =5V 90 L 100 Fig. 11 Detecting Position Characteristics (2) 0.5 1 1.5 2 2.5 Shield distance L (mm) ● Please refer to the chapter "Precautions for Use". 0 0 0.5 1 1.5 Shield distance L (mm) 2