SHARP GP1S55T

GP1S55T
GP1S55T
Compact, High Sensing
Accuracy Narrow Gap
Type Photointerrupter
■ Features
■ Outline Dimemsions
( Unit : mm )
5.0
1. Compact package ( Case height: 8mm )
2. High sensing accuracy
( Slit width••• Detector side: 0.15mm,
Emitter side: 0.5mm )
3. Easy positioning to PWB with positioning
pin
4. PWB direct mounting type
B-B ’ section
( Slit width of detector side )
11.0
0.15 ± 0.07
2.0 +- 0.3
0
B’ A’
+ 0.3
0.1
4 - 0.4 -
8.0
2.0
A
2 - 0.7
D
+
0 - 4.5 - 0.3
0.1
1. OA equipment such as FDDs. printers,
facsimiles
2. VCRs , cassette decks
3. Optoelectronic switches, electronic
counters, edge sensors
B
GP1S55
■ Applications
Detector center
(5.5)
C1
12.0MIN.
A-A ’ section
( Slit width of
emitter side )
0.5
(7.4)
(2.54)
10.2 ± 0.15
4
1
3
2
2 - φ 0.7 ±0.05
Internal connection
diagram
3
2
4
1
1 Anode
2 Cathode
3 Collector
4 Emitter
* Unspecified tolerances
shall be as follows;
Dimensions(d) Tolerance
d <=6.0
± 0.1
6.0 <d <=18.0
± 0.2
(
)
* : Reference dimensions
■ Absolute Maximum Ratings
Input
Output
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
( Ta = 25˚C )
Symbol
IF
I FM
VR
P
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
50
1
6
75
35
6
20
75
- 25 to + 85
- 40 to + 100
260
Unit
mA
A
V
mW
V
V
mA
mW
˚C
˚C
˚C
*1 Pulse width<=100 µ s, Duty ratio= 0.01
*2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1S55T
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
( Ta = 25˚C )
Parameter
Forward voltage
Peak forward voltage
Reverse current
Collector dark current
Collector Current
Symbol
VF
V FM
IR
I CEO
Ic
Conditions
I F =20mA
I FM =0.5A
V R =3V
VCE =20V
1 F = 20mA, V CE = 5V
MIN.
0.6
TYP.
1.2
3
1
-
MAX.
1.4
4
10
100
-
Unit
V
V
µA
nA
mA
Collector-emitter saturation
voltage
VCE ( sat )
I F = 40mA, I C = 0.6mA
-
-
0.4
V
VCE = 2V, I C = 2mA
RL= 100Ω
-
5
6
25
30
µs
µs
Rise time
Fall time
Response time
tr
tr
Fig. 1 Forward Current vs.
Ambient Temperature
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
60
Collector power dissipation Pc ( mW )
120
Forward current I F ( mA )
50
40
30
20
10
0
- 25
0
25
50
75
Ambient temperature T a ( ˚C )
85
60
40
20
0
25
50
75
85
100
Ambient temperature T a ( ˚C )
Fig. 4 Forward Current vs.
Forward Voltage
500
Pulse width<=100 µ s
T a = 25˚C
200
( mA )
1000
F
500
Forward current I
Peak forward current I FM ( mA )
80
75
0
- 25
100
Fig. 3 Peak Forward Current vs.
Duty Ratio
2000
100
200
100
T a = 75˚C
50˚C
100
25˚C
0˚C
- 25˚C
50
20
10
5
50
2
20
5
10
-2
2
5
10
Duty ratio
-1
2
5
100
1
0
0.5
1
1.5
2
Forward voltage V F ( V )
2.5
3
GP1S55T
Fig. 5 Collector Current vs.
Forward Current
Fig. 6 Collector Current vs.
Collector-emitter Voltage
5
6
T a = 25˚C
V CE = 5V
T a = 25˚C
Collector current Ic ( mA )
Collector current Ic ( mA )
3
2
1
40mA
4
30mA
3
20mA
2
10mA
1
0
0
0
10
20
30
40
Forward current I F ( mA )
50
0
1
2
3 4
5 6
7 8
Collector-emitter voltage V CE ( V)
9
10
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
Fig. 7 Collector Current vs.
Ambient Temperature
2
0.20
Collector-emitter saturation voltage
V CE ( sat ) ( V )
Collector current Ic ( mA )
I F = 50mA
5
4
1
I F = 20mA
I F = 40mA
I C= 0.6mA
0.15
8
V CE = 5V
0
- 25
0
25
50
75
Ambient temperature T a ( ˚C)
100
0.10
- 25
0
50
25
75
100
Ambient temperature T a ( ˚C )
Fig. 9 Response Time vs.
Load Resistance
100
50
V CE = 2V
I C = 2mA
T a = 25˚C
tr
20
Response time ( µ s )
Test Circuit for Response Time
tf
10
VCC
5
Input R D
2
ts
1
Input
RL
td
Output
Output
10%
90%
td
tr
0.5
0.2
0.1
0.01
0.1
1
Load resistance RL ( k Ω )
10
ts
tf
GP1S55T
Fig.11 Collector Dark Current vs.
Ambient Temperature
V CE = 2V
I C= 2mA
T a = 25˚C
Voltage gain Av ( dB )
0
-5
R L=
10kΩ 1kΩ 100Ω
- 10
- 15
10 -6
5
V CE = 20V
2
Collector dark current I CEO ( A)
Fig.10 Frequency Response
10 -7
5
2
10 -8
5
2
10 -9
5
2
2
5
103 2
5
104 2
5
105 2
10 -10
- 25
5 106
0
Frequency f ( Hz )
Fig.12 Relative Collector Current vs.
Shield Distance ( 1 )
+
0
( Detector center )
0
- 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5
Shield distance L ( mm )
Relative collector current (%)
50
-
-
L
Detector
Relative collector current (%)
100
L
I F = 20mA
V CE = 5V
T a = 25˚C
Shield
I F = 20mA
V CE = 5V
T a = 25˚C
Shield
100
Fig.13 Relative Collector Current vs.
Shield Distance ( 2 )
( Detector center )
100
25
50
75
Ambient temperature T a ( ˚C)
0
- 20
+
Detector
50
- 2
■ Precautions for Use
( 1 ) In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, methyl alcohol, isopropyl alcohol
( 2 ) As for other general cautions, refer to the chapter “ Precautions for Use ” .
- 1
0
1
Shield distance L ( mm )
2