GP1S55T GP1S55T Compact, High Sensing Accuracy Narrow Gap Type Photointerrupter ■ Features ■ Outline Dimemsions ( Unit : mm ) 5.0 1. Compact package ( Case height: 8mm ) 2. High sensing accuracy ( Slit width••• Detector side: 0.15mm, Emitter side: 0.5mm ) 3. Easy positioning to PWB with positioning pin 4. PWB direct mounting type B-B ’ section ( Slit width of detector side ) 11.0 0.15 ± 0.07 2.0 +- 0.3 0 B’ A’ + 0.3 0.1 4 - 0.4 - 8.0 2.0 A 2 - 0.7 D + 0 - 4.5 - 0.3 0.1 1. OA equipment such as FDDs. printers, facsimiles 2. VCRs , cassette decks 3. Optoelectronic switches, electronic counters, edge sensors B GP1S55 ■ Applications Detector center (5.5) C1 12.0MIN. A-A ’ section ( Slit width of emitter side ) 0.5 (7.4) (2.54) 10.2 ± 0.15 4 1 3 2 2 - φ 0.7 ±0.05 Internal connection diagram 3 2 4 1 1 Anode 2 Cathode 3 Collector 4 Emitter * Unspecified tolerances shall be as follows; Dimensions(d) Tolerance d <=6.0 ± 0.1 6.0 <d <=18.0 ± 0.2 ( ) * : Reference dimensions ■ Absolute Maximum Ratings Input Output Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *2 Soldering temperature ( Ta = 25˚C ) Symbol IF I FM VR P V CEO V ECO IC PC T opr T stg T sol Rating 50 1 6 75 35 6 20 75 - 25 to + 85 - 40 to + 100 260 Unit mA A V mW V V mA mW ˚C ˚C ˚C *1 Pulse width<=100 µ s, Duty ratio= 0.01 *2 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S55T ■ Electro-optical Characteristics Input Output Transfer characteristics ( Ta = 25˚C ) Parameter Forward voltage Peak forward voltage Reverse current Collector dark current Collector Current Symbol VF V FM IR I CEO Ic Conditions I F =20mA I FM =0.5A V R =3V VCE =20V 1 F = 20mA, V CE = 5V MIN. 0.6 TYP. 1.2 3 1 - MAX. 1.4 4 10 100 - Unit V V µA nA mA Collector-emitter saturation voltage VCE ( sat ) I F = 40mA, I C = 0.6mA - - 0.4 V VCE = 2V, I C = 2mA RL= 100Ω - 5 6 25 30 µs µs Rise time Fall time Response time tr tr Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Collector Power Dissipation vs. Ambient Temperature 60 Collector power dissipation Pc ( mW ) 120 Forward current I F ( mA ) 50 40 30 20 10 0 - 25 0 25 50 75 Ambient temperature T a ( ˚C ) 85 60 40 20 0 25 50 75 85 100 Ambient temperature T a ( ˚C ) Fig. 4 Forward Current vs. Forward Voltage 500 Pulse width<=100 µ s T a = 25˚C 200 ( mA ) 1000 F 500 Forward current I Peak forward current I FM ( mA ) 80 75 0 - 25 100 Fig. 3 Peak Forward Current vs. Duty Ratio 2000 100 200 100 T a = 75˚C 50˚C 100 25˚C 0˚C - 25˚C 50 20 10 5 50 2 20 5 10 -2 2 5 10 Duty ratio -1 2 5 100 1 0 0.5 1 1.5 2 Forward voltage V F ( V ) 2.5 3 GP1S55T Fig. 5 Collector Current vs. Forward Current Fig. 6 Collector Current vs. Collector-emitter Voltage 5 6 T a = 25˚C V CE = 5V T a = 25˚C Collector current Ic ( mA ) Collector current Ic ( mA ) 3 2 1 40mA 4 30mA 3 20mA 2 10mA 1 0 0 0 10 20 30 40 Forward current I F ( mA ) 50 0 1 2 3 4 5 6 7 8 Collector-emitter voltage V CE ( V) 9 10 Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig. 7 Collector Current vs. Ambient Temperature 2 0.20 Collector-emitter saturation voltage V CE ( sat ) ( V ) Collector current Ic ( mA ) I F = 50mA 5 4 1 I F = 20mA I F = 40mA I C= 0.6mA 0.15 8 V CE = 5V 0 - 25 0 25 50 75 Ambient temperature T a ( ˚C) 100 0.10 - 25 0 50 25 75 100 Ambient temperature T a ( ˚C ) Fig. 9 Response Time vs. Load Resistance 100 50 V CE = 2V I C = 2mA T a = 25˚C tr 20 Response time ( µ s ) Test Circuit for Response Time tf 10 VCC 5 Input R D 2 ts 1 Input RL td Output Output 10% 90% td tr 0.5 0.2 0.1 0.01 0.1 1 Load resistance RL ( k Ω ) 10 ts tf GP1S55T Fig.11 Collector Dark Current vs. Ambient Temperature V CE = 2V I C= 2mA T a = 25˚C Voltage gain Av ( dB ) 0 -5 R L= 10kΩ 1kΩ 100Ω - 10 - 15 10 -6 5 V CE = 20V 2 Collector dark current I CEO ( A) Fig.10 Frequency Response 10 -7 5 2 10 -8 5 2 10 -9 5 2 2 5 103 2 5 104 2 5 105 2 10 -10 - 25 5 106 0 Frequency f ( Hz ) Fig.12 Relative Collector Current vs. Shield Distance ( 1 ) + 0 ( Detector center ) 0 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 Shield distance L ( mm ) Relative collector current (%) 50 - - L Detector Relative collector current (%) 100 L I F = 20mA V CE = 5V T a = 25˚C Shield I F = 20mA V CE = 5V T a = 25˚C Shield 100 Fig.13 Relative Collector Current vs. Shield Distance ( 2 ) ( Detector center ) 100 25 50 75 Ambient temperature T a ( ˚C) 0 - 20 + Detector 50 - 2 ■ Precautions for Use ( 1 ) In case of cleaning, use only the following type of cleaning solvent. Ethyl alcohol, methyl alcohol, isopropyl alcohol ( 2 ) As for other general cautions, refer to the chapter “ Precautions for Use ” . - 1 0 1 Shield distance L ( mm ) 2