PC353T PC353T Mini-flat Package Photocoupler with Base Terminal ■ Features ■ Outline Dimensions 5 4 353 3 ■ Applications Output 2.6 ± 0.2 0.5 +- 0.4 0.2 7.0 +- 0.2 0.7 ( Ta = 25˚C ) Symbol IF I FM VR P V CEO V ECO V CBO V EBO IC PC P tot V iso T opr T stg T sol Rating 50 1 6 70 80 6 80 6 50 150 170 3.75 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V V V mA mW mW kV rms ˚C ˚C ˚C *1 Pulse width <=100µ s, Duty ratio : 0.001 *2 AC for 1 min., 40 to 60% RH, f = 60H z *3 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” 0.2mm or more Input 4 Emitter 5 Collector 6 Base 6˚ ■ Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector-base voltage Emitter-base voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature 3 C0.4 ( Input side ) 0.1 ± 0.1 Taping specifications Taping reel diameter 178mm ( 750pcs. ) 1 Anode 3 Cathode 4 5.3 ± 0.3 3.6 ± 0.3 ■ Package Specifications 5 1 0.4 ± 0.1 1. Hybrid substrates that reguire high denity mounting 2. Programmable controllers PC353T 6 4.4 ± 0.2 6 1 Model No. Internal connection diagram 1.27 ± 0.25 0.2 ± 0.05 1. With base terminal 2. Applicable to infrared ray reflow ( 230˚C, MAX. 30 seconds ) 3. High isolation voltage ( Viso : 3 750V rms ) 4. Recognized by UL (No. E64380) 5. Mini-flat package ( Unit : mm ) Soldering area PC353T ■ Electro-optical Characteristics Parameter Forward voltage Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Input Output Transfer characteristics ( Ta = 25˚C ) Symbol VF IR Ct I CEO BV CEO BV ECO BV CBO Collector current IC Collector-emitter saturation voltage V CE(sat) Isolation resistance R ISO Floating capacitance Rise time Fall time Response time Cf tr tf Conditions I F = 20mA V R = 4V V = 0, f = 1kHz V CE = 20V, I F = 0 I C = 0.1mA IF = 0 I E = 10 µA IF = 0 I C = 0.1mA IF = 0 I F = 5mA V CE = 5V I F = 20mA I C = 1mA DC500V 40 to 60% RH V = 0, f = 1MH Z MAX. 1.4 10 250 100 Unit V µA pF nA 80 - - V 6 - - V 80 - - V 2.5 - 30 mA - 0.1 0.2 V 5 x 1010 1011 - Ω - 0.6 4 3 1.0 18 18 pF µs µs V CE = 2V, I C = 2mA R L = 100 Ω 100 Diode power dissipation P ( mW ) 50 Forward current I F ( mA ) TYP. 1.2 30 - Fig. 2 Diode Power Dissipation vs. Ambient Temperature Fig. 1 Forward Current vs. Ambient Temperature 40 30 20 10 0 - 30 MIN. - 0 25 55 75 100 Ambient temperature T a ( ˚C ) 80 70 60 40 20 0 - 30 0 25 55 75 Ambient temperature T a ( ˚C ) 100 PC353T Fig. 4 Total Power Dissipation vs. Ambient Temperature Total power dissipation P tot ( mW ) Collector power dissipation Pc ( mW ) Fig. 3 Collector Power Dissipation vs. Ambient Temperature 200 150 100 50 0 - 30 0 25 50 75 200 170 150 100 50 0 - 30 100 0 Fig. 5 Peak Forward Current vs. Duty Ratio 50 75 100 Fig. 6 Forward Current vs. Forward Voltage 500 Pulse width <= 100 µ s T a = 25˚C 200 T a = 75˚C Forward current I F ( mA ) Peak forward current I FM ( mA ) 10000 25 Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C ) 1000 100 100 25˚C 50˚C 0˚C 50 - 25˚C 20 10 5 2 10 10 -3 10 - 2 Duty ratio 10 1 -1 0 1 1.5 2.0 F 2.5 3.0 ( V) Fig. 8 Collector Current vs. Collector-emitter Voltage 400 50 Collector current I C ( mA ) Current transfer ratio CTR ( % ) 1.0 Forward voltage V Fig. 7 Current Transfer Ratio vs. Forward Current 200 R BE = R BE = 500k Ω R BE = 100k Ω 0 0.5 0 0.5 1.0 5.0 10 Forward current I F ( mA ) 50 100 40 I F = 30mA I F = 20mA I F = 10mA 30 20 I F = 5mA 10 I F = 1mA 0 0 5 Collector-emitter voltage V CE ( V ) 10 PC353T Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 150 Collector-emitter saturation voltage VCE ( SAT ) ( V ) Relative current transfer ratio ( % ) I F = 5mA V CE = 5V 100 50 I F = 20mA I C = 1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 - 30 0 20 40 60 80 0 - 30 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C ) Fig.11 Collector Dark Current vs. Ambient Temperature 10 Fig.12 Response Time vs. Load Resistance -5 500 V CE = 20V 5 -6 100 5 10 -7 10 -8 Response Time ( µ s ) Collector dark current I CEO ( A ) 200 10 5 5 10 -9 20 5 - 10 0.5 10 - 11 20 40 60 Ambient temperature T 80 a 100 Collector-emitter saturation voltage V CE ( sat ) ( V ) 4.8 T a = 25˚C I C = 0.5mA 1mA 3mA 5mA 7mA 2.4 1.2 0 0 3 6 9 Foward current I 12 F td 0.2 0.1 0.01 ts 0.1 1 Load resistance R L ( k Ω ) ( ˚C ) Fig.13 Collector-emitter Saturation Voltage vs. Forward Current 3.6 tr 2 10 0 tf 10 1 5 V CE = 2A I C = 2mA T a = 25˚C 50 5 - 30 100 15 ( mA ) ● Please refer to the chapter “Precautions for Use.” 10