PC3H7/PC3Q67Q PC3H7/PC3Q67Q Mini-falt Package, General Purpose Half Pitch Photocoupler ■ Features ■ Outline Dimensions 1 S 2 3H 7 1.27±0.25 2.6±0.3 PC3H7 4 4.4 3 0.4±0.1 1. Mini-flat package 2. Half pitch type (lead pitch : 1.27mm) 3. Isolation voltage (Viso : 2 500Vrms) 4. Applicable to infrared ray reflow (230˚C, for MAX. 30s) 5. High reliability 6. Taping package PC3H7 (1ch) PC3Q67Q (4ch) 7. Recognized by UL, file No. E64380 Approved by VDE, No.5922UG (Unit : mm) Anode mark ±0.2 5.3±0.3 (1.7) ■ Applications 2.0±0.2 0.2±0.05 Epoxy resin 1. Programmable controllers Model No. PC3H7 PC3Q67Q Taping specifications Taping reel diameter 330mm (3 000pcs.) Taping reel diameter 330mm (1 000pcs.) +0.4 0.5−0.2 0.1±0.1 ■ Package Specifications 7.0+0.2 −0.7 ❈ ( ) : Reference dimensions Internal connection diagram 4 3 1 2 0.2mm or more 3 4 1 PC3Q67Q 2 Anode Cathode Emitter Collector 10.3±0.3 1.27±0.25 16 9 Model No. 4.4±0.2 Primary Side mark 0.4±0.1 1 C0.4 8 Epoxy resin 5.3±0.3 0.2±0.05 (Ta=25˚C) Symbol Unit Parameter Rating IF mA Forward current 50 *1Peak forward current A 1 IFM VR Reverse voltage 6 V mW Power dissipation P 70 Collector-emitter PC3H7 70 VCEO V voltage PC3Q67Q VCEO 35 V V Emitter-collector voltage VECO 6 mA Collector current 50 IC mW 150 Collector power dissipation PC mW 170 Total power dissipation Ptot *2Isolation voltage kVrms 2.5 Viso ˚C Operating temperature Topr −30 to +100 ˚C Tstg −40 to +125 Storage temperature *3Soldering temperature 260 ˚C Tsol 0.1±0.1 2.6±0.2 Output Input ■ Absolute Maximum Ratings *1 Pulse width<=100µs, Duty ratio : 0.001 *2 AC for 1min, 40 to 60%RH, f=60Hz *3 For 10s Parting line +0.4 0.5−0.2 +0.2 7.0−0.7 6° Internal connection diagram 16 15 14 13 12 11 10 9 1 3 5 7 Anode 2 4 6 8 Cathode 9 11 13 15 Emitter 10 12 14 16 Soldering area Notice 1 2 3 4 5 6 7 8 Collector In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ PC3H7/PC3Q67Q ■ Electro-optical Characteristics Parameter Forward voltage Reverse current Terminal capacitance Input Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Output PC3H7 PC3Q67Q Collector current Transfer characteristics PC3H7 PC3Q67Q PC3H7 PC3Q67Q Symbol VF IR Ct ICEO ICEO BVCEO BVCEO Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 VCE=20V, IF=0 IC=0.1mA, IF=0 IC=0.1mA, IF=0 MIN. − − − − − 70 35 TYP. 1.2 − 30 − − − − MAX. 1.4 10 250 100 100 − − (Ta=25˚C) Unit V µA pF nA nA V V BVECO IE=10µA, IF=0 6 − − V IC IC IF=1mA, VCE=5V IF=5mA, VCE=5V IF=20mA IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V IC=2mA RL=100Ω 0.2 2.5 − 5 4 30 mA mA − 0.1 0.2 V 5×1010 1×1011 − Ω − − − 0.6 4 3 1.0 18 18 pF µs µs Collector-emitter saturation voltage VCE(sat) Isolation resistance RISO Floating capacitance Rise time Fall time Response time Cf tr tf Fig.1 Forward Current vs. Ambient Temperature Fig.2 Diode Power Dissipation vs. Ambient Temperature 60 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 Ambient temperature Ta (°C) 100 125 100 80 70 60 40 20 0 −30 0 50 55 Ambient temperature Ta (°C) 100 PC3H7/PC3Q67Q Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature Collector power dissipation PC (mW) 200 Power dissipation Ptot (mW) 250 200 170 150 100 50 0 −30 0 25 50 75 150 100 50 0 −30 100 0 Fig.5 Peak Forward Current vs. Duty Ratio 10000 500 2000 Forward current IF (mA) Peak forward current IFM (mA) 75 1000 500 200 100 50 20 125 50˚C 100 25˚C 0˚C 50 − 25˚C 20 10 5 2 10 1 5 10−3 2 5 10−2 2 5 10−1 2 1 5 0 0.5 1.0 Duty ratio 1.5 2.0 2.5 3.0 3.5 Forward voltage VF (V) Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 500 VCE=5V Ta=25°C 50 IF=30mA 400 Collector current IC (mA) Current transfer ratio CTR (%) 100 Ta=75˚C 200 5 50 Fig.6 Forward Current vs. Forward Voltage Pulse width<=100µs Ta=25°C 5000 25 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 300 200 100 Ta=25°C PC (max) 20mA 10mA 40 30 5mA 20 10 1mA 0 0.1 0 1 10 Forward current IF (mA) 100 0 2 4 6 8 Collector-emitter voltage VCE (V) 10 PC3H7/PC3Q67Q Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 0.16 150 IF=5mA VCE=5V IF=20mA IC=1mA 0.14 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 100 50 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 0 20 40 60 80 0.00 −30 100 Fig.11 Collector Dark Current vs. Ambient Temperature 10−5 1000 40 60 80 100 VCE=2V IC=2mA Ta=25°C 500 10−6 200 5 100 10−7 Response time (µs) Collector dark current ICEO (A) 20 Fig.12 Response Time vs. Load Resistance VCE=20V 5 0 Ambient temperaturet Ta (°C) Ambient temperature Ta (°C) 5 10−8 5 10−9 5 50 20 tr 10 tf td 5 ts 2 1 10−10 0.5 5 10−11 −30 0 20 40 60 80 0.2 0.1 0.01 100 0.1 1 10 Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current Ta=25°C VCC Input RL Output Input Output 10% td tr ts tf 90% Collector-emitter saturation voltage VCE (sat) (V) 10 RD 100 Load resistance RL (kΩ) Ambient temperature Ta (°C) IC=0.5mA 8 1mA 3mA 6 5mA 7mA 4 2 0 0 2 4 6 Forward current IF (mA) 8 10 PC3H7/PC3Q67Q Fig.15 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 230°C 200°C 180°C 25°C 30s 1min 2min 1.5min ■ Precautions for Use Please refer to the chapter "Precautions for Use". 1min