PC3H4/PC3Q64Q PC3H4/PC3Q64Q Mini-falt Package AC Input Type Half Pitch Photocoupler ■ Features ■ Outline Dimensions Anode mark 1 S 2 3H 4 1.27±0.25 2.6±0.3 PC3H4 4 4.4 3 0.4±0.1 1. AC input type 2. Half pitch type (lead pitch : 1.27mm) 3. Isolation voltage between input and output (Viso: 2 500Vrms) 4. Applicable to infrared ray reflow (230˚C, for MAX. 30s) 5. High reliability 6. Taping package PC3H4 (1ch), PC3Q64Q (4ch) 7. Recognized by UL, file No. E64380 Approved by VDE, No.5922UG (Unit : mm) ±0.2 5.3±0.3 (1.7) 7.0+0.2 −0.7 ■ Applications 0.1±0.1 2.0±0.2 0.2±0.05 Epoxy resin +0.4 0.5−0.2 1. Programmable controllers Internal connection diagram 4 3 ■ Package Specifications 1 2 Taping specifications Taping reel diameter 330mm (3 000pcs.) Taping reel diameter 330mm (1 000pcs.) 3 4 1 PC3Q64Q 0.2mm or more *1 Pulse width<=100µs, Duty ratio : 0.001 *2 AC for 1min, 40 to 60%RH, f=60Hz *3 For 10s 10.3±0.3 16 1.27±0.25 9 Model No. Primary Side mark 4.4±0.2 (Ta=25˚C) Symbol Unit Parameter Rating IF mA Forward current ±50 *1Peak forward current A ±1 IFM mW 70 P Power dissipation Collector-emitter PC3H4 V 70 VCEO voltage 35 V PC3Q64Q VCEO V 6 Emitter-collector voltage VECO mA 50 Collector current IC mW 150 Collector power dissipation PC mW 170 Total power dissipation Ptot *2Isolation voltage kVrms 2.5 Viso ˚C Operating temperature Topr −30 to +100 ˚C Storage temperature Tstg −40 to +125 *3Soldering temperature ˚C 260 Tsol 0.4±0.1 1 C0.4 8 Epoxy resin 5.3±0.3 0.2±0.05 Output Input ■ Absolute Maximum Ratings Anode Cathode Emitter Collector 2 0.1±0.1 2.6±0.2 Model No. PC3H4 PC3Q64Q Parting line ❈ ( ) : Reference dimensions +0.4 0.5−0.2 +0.2 7.0−0.7 6° Internal connection diagram 16 15 14 13 12 11 10 9 1 3 5 7 Anode/Cathode 2 4 6 8 Anode/Cathode 9 11 13 15 Emitter 10 12 14 16 1 2 3 4 5 6 7 8 Collector Soldering area Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ PC3H4/PC3Q64Q ■ Electro-optical Characteristics Parameter Forward voltage Terminal capacitance Input Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Output Transfer characteristics PC3H4 PC3Q64Q PC3H4 PC3Q64Q Symbol VF Ct ICEO ICEO BVCEO BVCEO Conditions IF=±20mA V=0, f=1kHz VCE=50V, IF=0 VCE=20V, IF=0 IC=0.1mA, IF=0 IC=0.1mA, IF=0 MIN. − − − − 70 35 TYP. 1.2 30 − − − − MAX. 1.4 250 100 100 − − (Ta=25˚C) Unit V pF nA nA V V BVECO IE=10µA, IF=0 6 − − V 0.2 − 4.0 mA − 0.1 0.2 V 5×1010 1×1011 − Ω − − − 0.6 4 3 1.0 18 18 pF µs µs Collector current IC Collector-emitter saturation voltage VCE(sat) Isolation resistance RISO Floating capacitance Response time Rise time Fall time Cf tr tf Fig.1 Forward Current vs. Ambient Temperature IF=±1mA VCE=5V IF=±20mA IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V IC=2mA RL=100Ω Fig.2 Diode Power Dissipation vs. Ambient Temperature 60 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 Ambient temperature Ta (°C) 100 125 100 80 70 60 40 20 0 −30 0 50 55 Ambient temperature Ta (°C) 100 PC3H4/PC3Q64Q Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature 250 Power dissipation Ptot (mW) Collector power dissipation PC (mW) 200 150 100 50 200 170 150 100 50 0 −30 0 25 50 75 100 0 −30 125 0 Fig.5 Peak Forward Current vs. Duty Ratio 10000 500 Forward current IF (mA) Peak forward current IFM (mA) 2000 1000 500 200 100 50 20 100 50˚C 100 25˚C 0˚C 50 − 25˚C 20 10 5 2 10 1 5 10−3 2 5 10−2 2 5 10−1 2 1 5 0 0.5 1.0 Duty ratio 1.5 2.0 2.5 3.0 3.5 Forward voltage VF (V) Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 500 Ta=25°C PC (MAX.) VCE=5V Ta=25°C 50 400 Collector current IC (mA) Current transfer ratio CTR (%) 75 Ta=75˚C 200 5 50 Fig.6 Forward Current vs. Forward Voltage Pulse width<=100µs Ta=25°C 5000 25 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 300 200 20mA 30 10mA 20 5mA 100 0 0.1 IF=30mA 40 10 1mA 0 1 10 Forward current IF (mA) 100 0 2 4 6 8 Collector-emitter voltage VCE (V) 10 PC3H4/PC3Q64Q Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 0.16 150 IF=1mA VCE=5V IF=20mA IC=1mA 0.14 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 100 50 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 0 20 40 60 80 0.00 −30 100 0 Fig.11 Collector Dark Current vs. Ambient Temperature 10−5 1000 500 10−6 200 5 60 80 100 VCE=2V IC=2mA Ta=25°C 100 10−7 Response time (µs) Collector dark current ICEO (A) 40 Fig.12 Response Time vs. Load Resistance VCE=20V 5 20 Ambient temperaturet Ta (°C) Ambient temperature Ta (°C) 5 10−8 5 10−9 5 50 20 tr tf 10 5 td 2 ts 1 10−10 0.5 5 10−11 −30 0 20 40 60 80 0.2 0.1 0.01 100 0.1 1 10 Fig.13 Test Circuit For Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current Ta=25°C VCC Input RL Output Input Output 10% td tr ts tf 90% Collector-emitter saturation voltage VCE (sat) (V) 10 RD 100 Load resistance RL (kΩ) Ambient temperature Ta (°C) IC=0.5mA 8 1mA 3mA 6 5mA 7mA 4 2 0 0 2 4 6 Forward current IF (mA) 8 10 PC3H4/PC3Q64Q Fig.5 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 230°C 200°C 180°C 25°C 30s 1min 2min 1.5min ■ Precautions for Use Please refer to the chapter "Precautions for Use". 1min