PC450T11 PC450T11 Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption ■ Features ■ Outline Dimensions 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. 1 500% at I F = 5mA ) 3. Mini-flat package 4. Applicable to soldering reflow 5. Available tape-packaged products ( Unit : mm ) Internal connection diagram 4 3 4 3 1 2 4.4 ± 0.2 Model No. Anode mark 2.54 ± 0.25 0.4 ± 0.1 1 0.1 ± 0.1 2.6 ± 0.2 1. Programmable controllers ■ Package Specifications Model No. PC450T11 2 3.6 ± 0.3 Package Specification Taping diameter 178mm ( 750pcs. ) Input Output Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Emitter-collector voltage *2 Surge endurance Collector current Collector power dissipation Total power dissipation *3 Isolation voltage Operating temperature Storage temperature *4 Soldering temperature 5.3 ± 0.3 0.5 +- 0.4 0.2 6˚ 1 Anode 2 Cathode ■ Absolute Maximum Ratings C0.4 (Input side ) 0.2 ± 0.05 ■ Applications 7.0 +- 0.2 0.7 3 Emitter 4 Collector ( Ta = 25˚C ) Symbol IF I FM VR P V ECO E sj IC PC P tot V iso T opr T stg T sol Rating 50 1 6 70 6 20 150 150 170 3.75 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V mJ mA mW mW kV rms ˚C ˚C ˚C *1 Pulse width <=100 µs, Duty ratio : 0.001 *2 Esj = 40V ( VCEO ) x 100mA ( IC) x 10ms x 1/2 *3 AC for 1 min., 40 to 60% RH, f = 60Hz *4 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” PC450T11 ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Output Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Transfer Isolation resistance characFloating capacitance teristics Rise time Response time Fall time ( Ta = 25˚C ) Symbol VF IR Ct I CEO Conditions I F = 20mA V R = 4V V = 0, f = 1kHz V CE = 20V, I F = 0 IF = 0 I C = 0.1mA BV CEO BV ECO IC V CE(sat) R ISO Cf tr tf TYP. 1.2 30 - MAX. 1.4 10 250 5 Unit V µA pF µA 40 - 60 V I E = 10 µ A, I F = 0 6 - - V V CE = 2V, I F = 5mA I F = 10mA I C = 100mA DC500V, 40 to 60% RH V = 0, f = 1MHz V CE = 2V, I C = 2mA R L = 100 Ω 75 - - mA - 0.5 V 1.0 - Ω pF µs µs 5 x 10 - 120 50 100 Diode power dissipation P ( mW ) 60 40 30 20 10 0 - 30 0 25 50 10 11 10 0.6 50 30 Fig. 2 Diode Power Dissipation vs. Ambient Temperature Fig. 1 Forward Current vs. Ambient Temperature Forward current I F ( mA ) MIN. - 75 Ambient temperature T a ( ˚C ) 100 125 80 70 60 40 20 0 - 30 0 25 50 75 Ambient temperature T 100 a ( ˚C ) 125 PC450T11 Fig. 3 Power Dissipation vs. Ambient Temperature Fig. 4 Peak Forward Current vs. Duty Ratio 200 10000 Pulse width <=100 µs T a = 25˚C 5000 Peak forward current I FM ( mA ) Power dissipation P tot ( mW ) 170 150 100 50 2000 1000 500 200 100 50 20 10 0 - 30 0 25 50 75 100 5 125 5 10 - 3 2 5 10 -2 2 5 10 - 1 2 5 1 Duty ratio Ambient temperature T a ( ˚C ) Fig. 5 Forward Current vs. Forward Voltage Fig. 6 Current Tranfer Ratio vs. Forward Current 100 T a = 25˚C 5000 ( mA ) F Forward current I 50˚C Current tranfer ratio CTR ( % ) 25˚C 50 0˚C 20 - 25˚C 75˚C 10 5 4000 3000 V CE = 2V 2000 1000 2 0.5V 1 0.0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 0 0.1 3.0 Fig. 7 Collector Current vs. Collector -emitter Voltage 5.0 10 Forward current I F ( mA ) 1.0 50 100 Fig. 8 Relative Current Transfer Ratio vs. Ambient Temperature 150 Pc (max) T a = 25˚C I F = 1mA I F = 10mA Relative current transfer ratio ( % ) Collector current I C ( mA ) 100 5mA 80 60 3mA 2.5mA 40 2mA 20 0 1.5mA 1mA 0.5mA 0 1.0 2.0 3.0 4.0 Collector-emitter voltage V CE ( V ) VCE = 5V 100 50 0 5.0 - 30 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 PC450T11 Fig.9 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig.10 Collector Dark Current vs. Ambient Temperature 0.8 0.6 ( A) 0.5 CEO 0.4 0.3 0.2 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 0.1 0 - 30 0 20 40 60 Ambient temperature T a 80 100 V CE = 2V I C = 2mA T a = 25˚C tr tf td 10 ts 80 100 T a = 25˚C 5.0 100 1 0.01 0 20 40 60 Ambient temperature T a ( ˚C) Fig.12 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage V CE(sat ) ( V) 1000 - 30 ( ˚C ) Fig.11 Response Time vs. Load Resistance Response time ( µ s ) -3 VCE = 20V I C = 100mA Collector dark current I Collector-emitter saturation voltage V CE(sat) ( V ) 0.7 10 I F = 10mA I C = 5mA 4.0 10mA 30mA 3.0 50mA 70mA 2.0 100mA 1.0 0 0.1 1 10 Load resistance ( k Ω ) ●Please refer to the chapter “Precautions for Use. ” 0 2.0 4.0 Forward current I 6.0 8.0 F ( mA ) 10