PD413PI PD413PI High Speed Type Photodiode ■ Features ■ Outline Dimensions 2.0 ±0.2 R1.75 ± 0.1 2.4 2.5 Rest of gate 0.4MAX. 0.8 2-0.77 +1.5 - 1.0 2-0.45 8˚ +0.2 - 0.1 2-0.4 17.15 2. Personal computers 3. Printers (2.54 ) 8˚ 1 8˚ 0.5 MIN. 1. Portable information terminal equipment Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature + 0.2 - 0.1 1 2 1 Anode 2 Cathode ■ Absolute Maximum Ratings 0.5 8˚ 2.15 Mark (blue) ■ Applications 1.5 Black visible light cut epoxy resin 2. Half intensity angle : ∆θ : ± 45˚ ±0.2 5.0 ± 0.2 4.0 Detector center (Unit : mm) 3.75 ± 0.2 1. Built-in visible light cut-off filter (Sensitivity wavelength range : 750 to 1070 nm) 2 (Ta=25˚C) Symbol VR P T opr T stg T sol Rating 32 150 - 25 to + 85 - 40 to + 100 260 Unit V mW ˚C ˚C ˚C *1 For 5 seconds at the position of 2.15 mm from bottom face of resin package ■ Electro-optical Characteristics Parameter Shortcircuit current Dark current Forward voltage Terminal capacitance Peak sensitivity wavelength Half intensity angle Response time (Ta=25 ˚C) Symbol I SC Id VF Ct λp ∆θ tr , t f Conditions E V *2 = 100 lx V R = 10V, E V = 0 IF= 1mA VR= 3V, f= 1MHz R L = 1kΩ , VR = 10V MIN. 4.5 - TYP. 5.4 20 960 ± 45 200 MAX. 8.1 10 1 35 - Unit µA nA V pF nm ˚ ns *2 E v : Illuminance by CIE standard light source A (tungsten lamp) “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PD413PI Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity 200 100 90 Relative sensitivity (%) Power dissipation P (mW) 80 150 100 50 70 60 50 40 30 20 10 0 - 25 0 50 25 75 85 0 600 100 700 800 Fig. 3 Shortcircuit Current vs. Illuminance 10 -6 10 -7 10 -8 10 -9 100 10 1 0.1 10 100 1 000 10 000 10 -10 10 - 11 10 -12 - 25 Fig. 5 Dark Current vs. Reverse Voltage 0 25 50 75 100 Fig. 6 Terminal Capacitance vs. Reverse Voltage -7 60 Ta = 25˚C 5 f = 1MHz Ta = 25˚C 50 Terminal capacitance C t ( pF ) 2 10 - 8 Dark current I d (A) 1 200 Ambient temperature T a (˚C) Illuminance E v (lx) 10 1 100 VR =10V Dark current I d (A) Shortcircuit current I SC ( µ A) Ta=25˚C 1 1 000 Fig. 4 Dark Current vs. Ambient Temperature 1 000 0.01 900 Wavelength λ (nm) Ambient temperature Ta (˚C) 5 2 10 -9 5 2 10 -10 5 40 30 20 10 2 10 - 11 5 10- 2 2 5 10- 1 2 5 100 2 Reverse voltage VR (V) 5 10 2 5 0 0.05 0.1 0.2 0.5 1 2 5 Reverse voltage VR ( V) 10 20 50 PD413PI Fig. 7 Relative Output vs. Ambient Temperature (Detector : GL537/GL538) Fig. 8 Radiation Diagram - 20˚ 160 -10˚ Test circuit GL537/ GL538 Relative output (%) - 30˚ PD413Pl 120 100 - 40˚ 80 - 50˚ 60 - 60˚ 40 0 - 25 ( Fix PD and GL at position so that distance between them may be ISC =100 µ A at I F =20mA and Ta=25˚C 0 25 50 60 + 40˚ 40 + 50˚ + 60˚ 20 ) 75 + 30˚ 80 A 20 + 20˚ 100 Relative sensitivity (%) 140 (Ta = 25˚C ) +10˚ 0 - 70˚ + 70˚ - 80˚ + 80˚ + 90˚ - 90˚ 100 0 Angular displacement θ Ambient temperature Ta (˚C) Fig. 10 Response Time vs. Load Resistance Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) 102 100 5 VR= 10V Ta= 25˚C 10 2 Response time t r,t f (µ s) Relative output (%) GL538 GL537 1 101 5 2 100 5 2 10- 1 5 0.1 10 - 4 IF = 20mA Ta= 25˚C 10-3 10- 2 2 10- 10-1 Test Circuit for Response Time IOUT = 0.1mA PD413PI Output + Input 10V 90% RL Pulse generator Output tr 10 2 5 102 2 5 103 2 5 104 2 Load resistance R L ( Ω ) Distance between emitter and detector d (mm) Semiconductor laser 2 10% tr ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 5 105