PD49PI/PD481PI PD49PI/PD481PI High Speed, High Sensitivity Photodiode ■ Features ■ Outline Dimensions Detector center 7.0± 0.2 7.3 7.6± 0.2 0.3 0.9 1 0.9 1.3MAX. 1.3MAX. 13.0 ± 1.0 ( Chip location ) Black epoxy resin ( Visible light cut-off type ) Rest of gate 0.4MAX. 1. High sensitivity ( ISC >=3.5 µ A at E V = 100lx: PD481PI ) 2. Peak sensitivity wavelength matching with infrared LED ( λ p= 960nm: PD481PI ) ( λ p= 1000nm: PD49PI ) 3. Built-in visible light cut-off filter ( Unit : mm ) ■ Applications 0.5 0.5 2 0.1 1 2 0.5 1.3 5.08± 1 Anode 2 Cathode 1.4 2.7 ± 0.2 1. Infrared remote controllers for TVs, VCRs, audio equipment and air conditioners, etc. ■ Absolute Maximum Ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature ( Ta = 25˚C ) Symbol VR P Topr Tstg Tsol Rating 32 150 - 25 to + 85 - 40 to + 100 260 Unit V mW ˚C ˚C ˚C *For 10 seconds at the position of 2.3mm from the bottom face of resin package ■ Electro-optical Characteristics Parameter *2 *2 Short circuit current ( Ta = 25˚C ) Symbol PD49PI PD481PI Conditions MIN. 2.4 3.5 TYP. 3 5 MAX. - Unit µA I SC E V = 100lx Short circuit current temperature coefficient βT E V = 100lx - 0.2 - % /˚C Dark current Id V R = 10V - 1 30 nA Dark current temperature coefficient αT V R = 10V - 3.5 5 times/10˚C Ct V R = 3V, f= 1MHz - 20 1 000 960 50 1 010 pF λP 910 Terminal capacitance Peak sensitivity wavelength PD49PI PD481PI nm *2 E V : Illuminance by CIE standard light source A ( tungsten lamp ) “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” PD49PI/PD481PI Fig .1 Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity 200 100 T a = 25˚C 80 150 Relative sensitivity ( % ) Power dissipation P ( mW ) 90 100 50 PD481Pl PD49Pl 70 60 50 40 30 20 10 0 - 25 0 25 50 75 85 0 600 100 700 Ambient temperature T a ( ˚C ) 800 900 1000 Wavelength λ ( nm ) 1100 1200 Fig. 4 Dark Current vs. Reverse Voltage Fig. 3 Dark Current vs. Ambient Temperature 10 -7 10 - 6 T a = 25˚C 5 VR = 10V 10 - 7 2 10 - 8 Dark current I d ( A ) Dark current I d ( A ) 10 -8 10 - 9 10 - 10 5 2 10 -9 5 2 10 -10 10 - 11 5 2 10 - 12 - 25 0 25 50 75 Ambient temperature T a ( ˚C ) 10 -11 5 10- 2 2 100 Fig. 5 Terminal Capacitance vs. Reverse Voltage 5 Fig. 6 Relative Output vs. Ambient Temperature (Emitter : GL537/GL538,Detector : PD49PI/PD481PI ) 60 160 f = 1MHz Ta = 25˚C ( Test circuit ) GL537 PD49Pl GL538 PD481Pl 140 50 120 Relative output ( % ) Terminal capacitance C t ( pF ) 5 10-1 2 5 10 2 5 1 2 Reverse voltage VR ( V ) 40 30 20 A 100 80 60 40 10 20 0 0.05 0.1 0.2 0.5 1 2 5 Reverse voltage VR ( V ) 10 20 50 0 - 25 Distance between infrared light emitting diode and photodiode shall be fixed I sc = 100 µ A at I F = 20mA and T a = 25˚C 0 25 50 Ambient temperature T a ( ˚C ) 75 100 PD49PI/PD481PI Fig. 7 Sensitivity Diagram -20˚ 0 -10˚ Fig. 8 Relative Output vs. Distance ( Emitter:GL537/GL538 Detector : PD49PI/ PD481PI) ( Ta = 25˚C ) +10˚ +20˚ 100 100 - 40˚ - 50˚ - 60˚ 80 60 40 + 30˚ + 40˚ + 50˚ + 60˚ GL538 Relative output ( % ) Relative radiant intensity ( % ) - 30˚ 10 GL537 1 20 - 70˚ + 70˚ - 80˚ + 80˚ + 90˚ - 90˚ 0 Angular displacement θ I F = 20mA T a = 25˚C 0.1 10 -4 10 -3 10 - 2 10 - 1 Distance between emitter and detector d ( mm ) Fig. 9 Responce Time vs. Load Resistance 10 2 Test Circuit for Responce Time V R = 10V 5 T a = 25˚C 2 Responce time t r , t f ( µ s ) 10 5 Laser diode 2 IOUT = 0.1mA PD49PI/ PD481PI + 10 0 5 Output RL 2 10 - 1 5 Pulse generator 2 10 - 2 10 2 5 10 2 2 5 10 3 2 5 10 4 2 Load resistance R L ( Ω ) 5 10 5 ● Please refer to the chapter “ Precautions for Use.” Input 10V 90% Output 10% tr tf