PD411PI PD411PI Compact Package Type Photodiode with Condensing Lens ■ Features ■ Outline Dimensions R1.75 ± *1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge (2.5 ) 0.2 0.5 8˚ Transparent epoxy resin 8˚ 0.2 0.1 1 2 1 Anode 2 Cathode * Tolerance : ± 0.15 * ( ) : Reference dimensions ❈ Dimension at lead root 2 8˚ 2.15mm 8˚ Symbol Rating VR 32 P 150 - 25 to + 85 T opr - 40 to +100 T stg 260 T sol 5.0 ± 0.2 1.5 1.0 MIN. 0.5 8˚ 1 8˚ 0.4 +- 17.15 +8˚ Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature 2.0 ± 8˚ 2.15 0.8 0.2 0.1 2.54 ❈ ■ Absolute Maximum Ratings 0.1 1.5 3.75 ± 0.2 0.45 +- 1. Optoelectronic switches 0.2 (Unit : mm) 2.4 MAX. 0.4 ■ Applications 4.0 ± Detector center Rest of gate 1. High sensitivity (TYP. 1.0A/W at λ p=960 nm) 2. High speed response ( tr ,tf:TYP. 200ns at R L= 1kΩ ) (Ta=25˚C) Unit V mW ˚C ˚C ˚C Soldering area “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PD411PI ■ Electro-optical Characteristics Parameter Shortcircuit current (Ta=25 ˚C) Symbol Isc Conditions *2 E V = 100 lx MIN. 5.0 TYP. 7.5 MAX. 9.0 Unit µA E V = 100 lx - 0.2 - % /˚C Shortcircuit current temperature coefficient βT Dark current Id V R = 10V, Ee= 0 - 0.5 10 nA Dark current temperature coefficient αT V R = 10V, Ee= 0 - 3.5 5.0 times/10˚C Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Ct λp K tr tf V R = 3V, f= 1MHZ - 20 960 1.0 200 pF nm A/W 200 35 - - ± 45 - ˚ Rise Time Fall Time Response time *2 l = 960nm R L = 1kΩ V R = 10V ∆θ Half intensity angle *2 E V : Illuminance by CIE standard light source A (tungsten lamp) Fig. 2 Spectral Sensitivity Fig. 1 Power Dissipation vs. Ambient Temperature 100 200 90 Ta=25˚C Relative sensitivity (%) Power dissipation P (mW) 80 150 100 50 70 60 50 40 30 20 10 0 - 25 0 0 25 50 75 85 Ambient temperature T a ( ˚C) 100 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) ns PD411PI Fig. 3 Shortcircuit Current vs. Illuminance Fig. 4 Dark Current vs. Ambient Temperature 10 - 6 1000 VR =10V 10 - 7 (A) 100 10 - 8 Shortcircuit current I d SC ( µ A) Ta=25˚C Dark current I 10 1 0.1 0.01 10 - 9 10- 10 10- 11 1 10 100 1000 10000 10- 12 - 25 0 Illuminance E V (lx) 10- 7 f = 1MHz T a = 25˚C Terminal capacitance C t ( pF ) Dark current I d (A ) 100 60 2 8 5 2 9 5 2 10- 75 Ta= 25˚C 5 10- 50 Fig. 6 Terminal Capacitance vs. Reverse Voltage Fig. 5 Dark Current vs. Reverse Voltage 10- 25 Ambient temperature T a (˚C) 10 5 50 40 30 20 10 2 10- 11 5 10 -2 2 5 10 -1 2 5 2 1 5 10 2 5 0 0.05 0.1 0.2 0.5 1 2 Fig. 7 Relative Output vs. Ambient Temperature (Detector : GL537/GL538) Fig. 8 Radiation Diagram - 20˚ 160 -10˚ 0 Test circuit GL537/GL538 PD411Pl Relative output (%) 120 - 30˚ A 100 - 40˚ 80 - 50˚ 60 - 60˚ 40 20 0 - 25 ( Fix PD and GL at position so that distance between them may be I SC =100µ A at I F =20mA and Ta=25˚C. 0 25 50 10 20 50 75 Ambient temperature T a (˚C) (Ta = 25˚C ) + 10˚ + 20˚ 100 80 Relative sensitivity (%) 140 5 Reverse voltage V R (V) Reverse voltage V R (V) 60 40 + 30˚ + 40˚ + 50˚ + 60˚ 20 ) 100 - 70˚ + 70˚ - 80˚ + 80˚ + 90˚ - 90˚ 0 Angular displacement θ PD411PI Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) Fig. 10 Response Time vs. Load Resistance 102 100 5 ,t f ( m s ) 10 2 r GL537 Response time t Relative output (%) GL538 1 0.1 10 IF = 20mA T a = 25˚C -4 10 -3 10 -2 PD411PI + Output 10 Pulse generator Input 10V Output tr 2 100 5 2 10 - 1 5 5 10 2 2 5 10 3 2 5 10 4 2 Load resistance R L ( Ω ) 90 % RL 5 2 Test Circuit for Response Time IOUT= 0.1mA Ta= 25˚C 101 10 - 2 10 2 -1 Distance between emitter and detector d (mm) Semiconductor laser VR= 10V 10 % tf ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 5 105