SHARP PD411PI

PD411PI
PD411PI
Compact Package Type Photodiode
with Condensing Lens
■ Features
■ Outline Dimensions
R1.75 ±
*1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge
(2.5 )
0.2
0.5
8˚
Transparent epoxy resin
8˚
0.2
0.1
1
2
1 Anode
2 Cathode
* Tolerance : ± 0.15
* ( ) : Reference dimensions
❈ Dimension at lead root
2
8˚
2.15mm
8˚
Symbol
Rating
VR
32
P
150
- 25 to + 85
T opr
- 40 to +100
T stg
260
T sol
5.0 ± 0.2
1.5
1.0
MIN. 0.5
8˚
1
8˚
0.4 +-
17.15 +8˚
Parameter
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
2.0 ±
8˚
2.15
0.8
0.2
0.1
2.54
❈
■ Absolute Maximum Ratings
0.1
1.5
3.75 ± 0.2
0.45 +-
1. Optoelectronic switches
0.2
(Unit : mm)
2.4
MAX. 0.4
■ Applications
4.0 ±
Detector center
Rest of gate
1. High sensitivity
(TYP. 1.0A/W at λ p=960 nm)
2. High speed response ( tr ,tf:TYP. 200ns at R L= 1kΩ )
(Ta=25˚C)
Unit
V
mW
˚C
˚C
˚C
Soldering area
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PD411PI
■ Electro-optical Characteristics
Parameter
Shortcircuit current
(Ta=25 ˚C)
Symbol
Isc
Conditions
*2
E V = 100 lx
MIN.
5.0
TYP.
7.5
MAX.
9.0
Unit
µA
E V = 100 lx
-
0.2
-
% /˚C
Shortcircuit current temperature coefficient
βT
Dark current
Id
V R = 10V, Ee= 0
-
0.5
10
nA
Dark current temperature coefficient
αT
V R = 10V, Ee= 0
-
3.5
5.0
times/10˚C
Terminal capacitance
Peak sensitivity wavelength
Peak spectral sensitivity
Ct
λp
K
tr
tf
V R = 3V, f= 1MHZ
-
20
960
1.0
200
pF
nm
A/W
200
35
-
-
± 45
-
˚
Rise Time
Fall Time
Response time
*2
l = 960nm
R L = 1kΩ
V R = 10V
∆θ
Half intensity angle
*2 E V : Illuminance by CIE standard light source A (tungsten lamp)
Fig. 2 Spectral Sensitivity
Fig. 1 Power Dissipation vs. Ambient
Temperature
100
200
90
Ta=25˚C
Relative sensitivity (%)
Power dissipation P (mW)
80
150
100
50
70
60
50
40
30
20
10
0
- 25
0
0
25
50
75 85
Ambient temperature T a ( ˚C)
100
300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
ns
PD411PI
Fig. 3 Shortcircuit Current vs. Illuminance
Fig. 4 Dark Current vs. Ambient Temperature
10 - 6
1000
VR =10V
10 - 7
(A)
100
10 - 8
Shortcircuit current I
d
SC
( µ A)
Ta=25˚C
Dark current I
10
1
0.1
0.01
10 - 9
10- 10
10- 11
1
10
100
1000
10000
10- 12
- 25
0
Illuminance E V (lx)
10- 7
f = 1MHz
T a = 25˚C
Terminal capacitance C t ( pF )
Dark current I d (A )
100
60
2
8
5
2
9
5
2
10-
75
Ta= 25˚C
5
10-
50
Fig. 6 Terminal Capacitance vs. Reverse
Voltage
Fig. 5 Dark Current vs. Reverse Voltage
10-
25
Ambient temperature T a (˚C)
10
5
50
40
30
20
10
2
10-
11
5 10 -2 2
5 10 -1 2
5
2
1
5 10 2
5
0
0.05 0.1 0.2
0.5
1
2
Fig. 7 Relative Output vs. Ambient
Temperature (Detector : GL537/GL538)
Fig. 8 Radiation Diagram
- 20˚
160
-10˚
0
Test circuit
GL537/GL538
PD411Pl
Relative output (%)
120
- 30˚
A
100
- 40˚
80
- 50˚
60
- 60˚
40
20
0
- 25
(
Fix PD and GL at position so that
distance between them may be
I SC =100µ A at I F =20mA and Ta=25˚C.
0
25
50
10
20
50
75
Ambient temperature T a (˚C)
(Ta = 25˚C )
+ 10˚
+ 20˚
100
80
Relative sensitivity (%)
140
5
Reverse voltage V R (V)
Reverse voltage V R (V)
60
40
+ 30˚
+ 40˚
+ 50˚
+ 60˚
20
)
100
- 70˚
+ 70˚
- 80˚
+ 80˚
+ 90˚
- 90˚
0
Angular displacement θ
PD411PI
Fig. 9 Relative Output vs. Distance
(Detector : GL537/GL538)
Fig. 10 Response Time vs. Load Resistance
102
100
5
,t f ( m s )
10
2
r
GL537
Response time t
Relative output (%)
GL538
1
0.1
10
IF = 20mA
T a = 25˚C
-4
10
-3
10
-2
PD411PI
+
Output
10
Pulse generator
Input
10V
Output
tr
2
100
5
2
10 - 1
5
5 10 2 2
5 10 3 2
5 10 4 2
Load resistance R L ( Ω )
90 %
RL
5
2
Test Circuit for Response Time
IOUT= 0.1mA
Ta= 25˚C
101
10 - 2
10 2
-1
Distance between emitter and detector d (mm)
Semiconductor laser
VR= 10V
10 %
tf
● Please refer to the chapter "Precautions for Use". (Page 78 to 93)
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