SHARP PD480PI

PD480PI/PD480PI1
PD480PI/PD480PI1
High Speed, Narrow
Acceptance Photodiodes
■ Features
■ Outline Dimensions
1. High speed response ( t r , t f: TYP. 100ns
at R L = 1kΩ )
2. Narrow acceptance (∆θ : TYP. ± 20˚ )
3. Compact
4. Lead forming type ( PD480PI1 )
( Unit: mm )
0.2
4.0±
R0.8 ± 0.1
0.8MAX.
17.5+-
0.2
2.15±
0.2
2.95±
1
2
0.5MIN.
■ Applications
1
0.15
1.5
1.0
60 ˚
1.7
1. Game machines
2. Optoelectronic switches
3. Infrared remote controllers for TVs,
VCRs, audio equipment, air conditioners,
etc.
1.15
0.75
Transparent epoxy resin
0.2
Rest of
gate
0.3MAX.
±
2- C0.5 3.0
1.5
Detector
center
PD480PI
2.54
2- 0.4
1.6
2.8
1 Anode
2 Cathode
2
*1 For 3 seconds at the position of 2.5mm from the
surface of resin edge
■ Electro-optical Characteristics
Parameter
Short circuit current
Dark current
Terminal capacitance
Peak sensitivity wavelength
Response time
Half intensity angle
*2
Symbol
I SC
Id
Ct
λp
tr , t f
∆θ
Conditions
MIN.
1.0
R L= 1kΩ , V R = 10V E V = 100 lx
V R = 10V, E V = 0
V R = 0, f= 1MHz
-
( Ta= 25˚C )
TYP.
1.7
4.0
950
100
± 20
MAX.
2.4
10
10
250
-
0.2
4.0±
1
1
60 ˚
2.54
2
2- 0.4
1.6
2.8
0.15
0.5MIN.
0.8MAX.
15.5MIN.
1.7
Unit
V
mW
˚C
˚C
˚C
0.2
Rating
20
75
- 25 to + 85
- 40 to + 85
260
2.15±
Symbol
VR
P
T opr
T stg
T sol
1.15
0.75
Transparent epoxy resin
R0.8 ± 0.1
0.2
Parameter
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
( Ta = 25˚C )
2.95±
■ Absolute Maximum Ratings
0.2
0.3MAX.
Rest of
gate
±
2-C0.5 3.0
1.5
Detector
center
PD480PI1
1 Anode
2 Cathode
1.0
2
Unit
µA
nA
pF
nm
ns
˚
*2 E V : Illuminance by CIE standard light source A ( tungsten lamp)
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PD480PI/PD480PI1
Fig. 1 Power Dissipation vs.
Ambient Temperature
Fig. 2 Spectral Sensitivity
100
90
T a = 25˚C
80
60
Relative sensitivity ( % )
Power dissipation P ( mW )
80
75
70
50
40
30
20
70
60
50
40
30
20
10
10
0
- 25
0
25
75 85
50
0
400
100
500
600
Ambient Temperature Ta ( ˚C )
Fig. 3 Dark Current vs.
Ambient Temperature
900
1000
1100
1200
10 -8
T a = 25˚C
VR = 10V
10 - 7
10 -9
5
10 - 8
Dark current I d ( A )
Dark current I d ( A )
800
Fig. 4 Dark Current vs. Reverse Voltage
10 - 6
5
700
Wavelength λ ( nm )
5
10 - 9
5
10 - 10
5
10 -10
10 -11
10 -12
10 - 11
5
10 - 12
- 30
0
20
40
60
Ambient temperature Ta ( ˚C )
80
10 -13
10 - 3
100
Fig. 5 Terminal Capacitance vs.
Reverse Voltage
10 - 1
1
Reverse voltage VR ( V )
10 2
10
Fig. 6 Relative Output vs. Ambient Temperature
6
160
f = 1MHz
T a = 25˚C
5
GL480
PD480Pl
140
A
Relative output ( % )
Terminal capacitance C t ( pF )
10 - 2
4
3
2
120
100
80
60
40
1
20
0
0.1
0.2
0.5
1
2
5
10
Reverse voltage VR ( V )
20
50
100
0
- 25
Distance between infrared light
emitting diode and photodiode shall
be fixed when I sc = 25 µ A at I F = 20mA
and T a = 25˚C.
0
25
50
Ambient temperature Ta ( ˚C )
75
100
PD480PI/PD480PI1
Fig. 7 Sensitivity Diagram
- 20˚
Fig. 8 Relative Output vs. Distance
( Ta = 25˚C )
0
- 10˚
+10˚
+20˚
100
- 40˚
- 50˚
- 60˚
- 70˚
50
+30˚
80
GL480
60
+40˚
40
+50˚
+60˚
20
Relative output ( % )
- 30˚
Relative radiant intensity ( % )
100
10
5
1
0.5
+70˚
+80˚
- 80˚
+90˚
- 90˚
0
Angular displacement θ
I F = 20mA
Ta = 25˚C
0.1
0.1
0.5 1
50 100
10
5
Distance between emitter and detector
d ( mm )
Fig. 9 Responce Time vs. Load Resistance
100
V R = 10V
T a = 25˚C
Test Circuit for Responce Time
Responce time t r , t f ( µ s )
10
Laser diode
IOUT = 0.1mA
Input
1
tr, t
PD480PI/
PD480PI1 +
f
Output
RL
0.1
Pulse generator
0.01
10
10 3
10 4
10 2
Load resistance RL ( Ω )
10 5
● Please refer to the chapter “Precautions for Use.”
10V
90%
Output
10%
tr
tr