S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Low Input Driving Type Phototriac Coupler S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T ❈ Taping reel type of S21MD8T is also available ( S21MD8P ) ❈ DIN-VDE0884 approved type is also available. ■ Features ■ Outline Dimensions 1. Low input driving current ( S11MD7T/ S11MD8T/ S21MD7T/ S21MD8T I FT : MAX. 5mA S11MD9T /S21MD9T IFT : MAX.7mA ) 2. Pin No. 5 completely molded for external noise resistance 3. Built-in zero-cross circuit (S11MD8T/S21MD8T ) Internal connection diagram 6 4 Anode mark 1 2 2.54± 0.25 200V line S21MD7T/ S21MD9T S11MD8T S21MD8T 4 ❈ Zero-cross circuit 1 3 2 3 0.9± 0.2 1.2± 0.3 7.62± 0.3 3.7±0.5 3.35± 0.5 0.5TYP. 3.5± 0.5 7.12± 0.5 ■ Model Line-ups 100V line S11MD7T/ S11MD9T 6 6.5± 0.5 S11MD8T 4. High repetitive peak OFF-state voltage ( S11MD7T / S11MD8T / S11MD9T VDRM : MIN. 400V S21MD7T / S21MD8T / S21MD9T VDRM : MIN. 600V 5. Isolation voltage between input and output ( Viso : 5 000V rms ) 6. Recognized by UL, file No.E64380 No zero-cross circuit Built-in zerocross circuit ( Unit : mm ) 0.5± 0.1 0.26 ± 0.1 θ : 0 to 13 ˚ 1 Anode 2 Cathode 3 NC θ 4 Anode/ Cathode 6 Anode/ Cathode ∗ Zero-cross circuit for S11MD8T and S21MD8T ■ Applications 1. For triggering medium/high power triacs ■ Absolute Maximum Ratings ( Ta = 25˚C ) Rating Parameter Input Output Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current Repetitive peak OFF-state voltage ∗2 Isolation voltage Operating temperature Storage temperture ∗3 Soldering temperature Symbol S11MD7T/S11MD8T S11MD9T IF VR IT Isurge VDRM Viso Topr Tstg Tsol S21MD7T/S21MD8T/ S21MD9T 50 6 0.1 1.2 400 600 5 000 - 30 to +100 - 55 to +125 260 Unit mA V A rms A V V rms ˚C ˚C ˚C ∗1 50Hz Sine wave ∗2 40 to 60% RH, AC for 1 minute, f = 60Hz ∗3 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward voltage Reverse current Repetitive peak OFF-state current S11MD7T/S21MD7T S11MD9T/S21MD9T ON-state voltage S11MD8T/S21MD8T Holding current Critical rate of rise of OFF-state voltage Zere-cross voltage S11MD8T/S21MD8T S11MD7T/S21MD7T Minimum trigger S11MD8T/S21MD8T current S11MD9T/S21MD9T Isolation resistance S11MD7T S11MD9T/S21MD7T/ Turn-on time S21MD9T S11MD8T/S21MD8T ( Ta = 25˚C) Symbol Conditions I F = 20mA VF VR = 3V IR I DRM V DRM = Rated VT IH dV/dt VOX IFT RISO t on Fig. 1 RMS ON-state Current vs. Ambient Temperature I T = 0.1A VD = 6V V DRM = 1/ 2 • Rated Resistance load, I F = 10mA V D = 6V, R L = 100Ω DC500V, 40 to 60% RH V D = 6V, R L = 100Ω I F = 20mA MIN. - TYP. 1.2 - MAX. 1.4 10 - 5 10 - 6 - 1.5 2.5 0.1 100 - 1.7 0.5 - 2.5 3.5 35 - - 5 5 x 1010 - 1011 70 7 100 Ω - 60 100 µs - 20 50 V mA V/ µs V mA Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) RMS ON-state current I T (Arms) 0.10 0.05 50 40 30 20 10 0 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 -30 0 25 50 75 100 Ambient temperature T a ( ˚C ) Unit V A A 125 S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Minimum Trigger Current vs. Ambient Temperature 12 V D = 6V RL = 100Ω Minimum trigger current I FT ( mA ) 500 Forward current I F ( mA ) 200 100 50 T a = 100˚C 20 75˚C 50˚C 25˚C 0˚C - 30˚C 10 5 10 8 6 4 S11MD8T/S21MD8T 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 0 3.0 Fig. 5 Relative Repetitive Peak OFF-State Voltage vs. Ambient Temperature -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 1.9 I T = 100mA 1.8 1.2 1.1 1.0 ON-state voltage V T ( V ) S11MD7T/S21MD7T S11MD9T/S21MD9T S11MD8T/S21MD8T 0.9 100 Fig. 6 ON-state Voltage vs. Ambient Temperature 1.3 Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25˚C) S11MD7T/S21MD7T 2 2 S11MD8T 1.7 S21MD8T 1.6 1.5 S11MD7T/S21MD7T S11MD9T/S21MD9T 1.4 0.8 1.3 -30 0.7 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 V D = 6V 5 2 S11MD8T/S21MD8T 1 0.5 0.1 - 30 100 2 10 0.2 0 20 40 60 80 Ambient temperature T a ( ˚C ) Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MD7T/S11MD9T ) Fig. 7 Holding Current vs. Ambient Temperature S11MD7T/S21MD7T S11MD9T/S21MD9T 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Repetitive peak OFF-state current I DRM ( A ) - 30 Holding current I H ( mA ) S11MD9T/S21MD9T T a = 25˚C 10 -9 5 2 -10 10 5 100 200 300 400 OFF-state voltage V D ( V ) 500 600 S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MD8T/S21MD8T) 2 Repetitive peak OFF-state current I DRM ( A ) Repetitive peak OFF-state current I DRM ( A ) T a = 25˚C S21MD8T 10 - 7 Fig. 8-c Repetitive Peak OFF-state Current vs. OFF-state Voltage (S21MD7T/S21MD9T ) 5 S11MD8T 2 10 - 8 100 200 300 400 500 OFF-stage voltage V D ( V ) 2 10 - 10 5 2 600 Fig. 9-a Repetitive Peak OFF-state Current vs. Ambient Temperature (S11MD7T/S11MD9T/S21MD7T/S21MD9T) -7 10 VD = 400V (S11MD7T/S11MD9T ) VD = 600V (S21MD7T/S21MD9T ) 10 - 8 10 - 9 10 - 10 10 - 11 10 - 12 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 300 400 500 Off-state voltage V D ( V ) 600 10 VD = 400V (S11MD8T ) VD = 600V (S21MD8T ) 10 - 5 S21MD8T 10 - 6 S11MD8T 10 - 7 10 - 8 10 - 9 -30 100 Fig.10 Zero-cross Voltage vs. Ambient Temperature (S11MD8T/S21MD8T ) 200 Fig. 9-b Repetitive Peak OFF-state Current vs. Ambient Temperature (S11MD8T/S21MD8T ) -4 Repetitive peak OFF-state current I DRM (A) Repetitive peak OFF-state current I DRM ( A ) 5 10 - 11 5 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig.11-a Turn-on Time vs. Forward Current ( S11MD7T ) 200 R load I F = 10mA V D = 6V R L = 100Ω 25 Turn-on time t on ( µs ) Zero-cross voltage V OX ( V ) T a =25˚C 10 - 9 20 100 50 30 15 -30 20 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 5 10 20 Forward current I F ( mA ) 50 S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Fig.11-b Turn-on Time vs. Forward Current (S11MD8T/S21MD8T ) Fig.11-c Turn-on Time vs. Forward Current (S11MD9T/S21MD7T/S21MD9T ) 200 100 V D = 6V R L = 100Ω Turn-on time t on ( µs ) V D = 6V R L = 100Ω Turn-on time t on ( µs ) 50 20 100 50 30 10 20 5 10 20 Forward current I F ( mA) 50 5 100 100 I F = 20mA T a = 25˚C 80 ON-state current I T ( mA ) ON-state current I T ( mA ) 70 S11MD7T S21MD7T S11MD9T S21MD9T 60 50 40 30 60 S21MD8T 50 S11MD8T 40 30 20 10 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage V T ( V ) ■ Basic Operation Circuit S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T 1 6 Zerocross circuit Load AC100V (S11MD7T/S11MD8T/S11MD9T ) AC200V (S21MD7T/S21MD8T/S21MD9T ) 2 4 Zero-cross Circuit ( S11MD8T/S21MD8T ) ● 70 20 0 VIN I F = 20mA 90 Ta = 25˚C 80 + VCC 50 Fig.12-b ON-state Current vs. ON-state Voltage (S11MD8T/S21MD8T ) Fig.12-a ON-state Current vs. ON-state Voltage (S11MD7T/S21MD7T/S11MD9T/S21MD9T ) 90 10 20 Forward current I F ( mA ) Please refer to the chapter “ Precautions for Use.” 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage V T ( V )