SHARP S12ME1

S12ME1/S12ME1F
S12ME1/S12ME1F
European Safety Standard Approved,
Long Creepage Distance Type
Photothyristor Coupler
❈ Lead forming type ( I type ) and taping reel type ( P type ) of S12ME1/S12ME1F are also available. ( S12ME1I/S12ME1FI,S12ME1P/S12ME1FP )
❈ DIN-VDE0884 approved type is also available as an option.
1. Internal insulation distance : 0.4mm or more
2. Creepage distance : 8mm or more
Space distance : 5mm or more ( S12ME1 )
8mm or more ( S12ME1F )
3. Recognized by UL file No. E64380
Approved by BSI ( BS415 : NO.7088, BS7002 : NO.7410)
■ Outline Dimensions
S12ME1
6
5
4
S12ME1
2
Anode
mark
3
1
2
3
1
2
3
4
5
6
1.2± 0.3
7.62± 0.3
3.5± 0.5
9.22± 0.5
Anode
Cathode
NC
Cathode
Anode
Gate
3.7± 0.5
0.5TYP.
3.4± 0.3
1. ON-OFF operation for low power load
2. For triggering medium or high power thyristor and triac
3. Over voltage detection of switching power supplies
Internal connection
diagram
6
5
4
2.54± 0.25
1
■ Applications
( Unit : mm )
6.5± 0.5
■ Features
0.5± 0.1
0.26± 0.1
θ
θ : 0 to 13˚
S12ME1F
2.54± 0.25
5
4
S12ME1
1
2
Anode
mark
6
5
4
1
2
3
6.5± 0.5
6
Internal connection
diagram
3
1.2± 0.3
7.62± 0.3
3.4± 0.5
3.5± 0.5
9.22± 0.5
0.26± 0.1
0.5± 0.1
10.16± 0.5
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
1
2
3
4
5
6
Anode
Cathode
NC
Cathode
Anode
Gate
S12ME1/S12ME1F
■ Absolute Maximum Ratings
Input
Output
( Ta = 25˚C )
Parameter
Forward current
Reverse voltage
RMS ON-state current
∗1
Peak one cycle surge current
∗2
Repetitive
peak OFF-state voltage
∗2
Repetitive peak
OFF-state reverse voltage
∗3
Isolation voltage
Operating temperature
Storage temperature
∗4
Soldering temperature
Symbol
IF
VR
IT
I surge
Rating
50
6
0.2
2
Unit
mA
V
A rms
A
V DRM
400
V
V RRM
400
V
V iso
T opr
T stg
T sol
4 000
- 30 to +100
- 55 to +125
260
V rms
˚C
˚C
˚C
∗1 50Hz sine wave
∗2 R G = 20kΩ
∗3 40 to 60% RH, AC for 1 minute, f = 60Hz
∗4 For 10 seconds
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Forward voltage
Reverse current
Repetitive peak OFF-state
current
Repetitive peak OFF-state
reverse voltage
ON-state voltage
Holding current
Critical rate of rise of
OFF-state voltage
Minimum trigger current
Isolation resistance
Turn-on time
( Ta = 25˚C )
Symbol
VF
IR
Conditions
I F = 20mA
VR = 3V
MIN.
-
TYP.
1.2
-
MAX.
1.4
10
Unit
V
µA
-
-
1
µA
I DRM
V DRM = Rated, R G = 20kΩ
I RRM
V DRM = Rated, R G = 20kΩ
-
-
1
µA
VT
IH
I T = 0.2A
V D = 6V, R G = 20kΩ
-
1.0
-
1.4
1.0
V
mA
dV/dt
V DRM = 1/ 2 • Rated, R G = 20kΩ
3
-
-
V/ µ s
I FT
RISO
V D = 6V, R L = 100Ω , R G = 20kΩ
DC500V, 40 to 60% RH
V D = 6V, R L = 100Ω , I F = 20mA
R G = 20kΩ
5 x 1010
1011
10
-
mA
Ω
-
-
50
µs
t on
S12ME1/S12ME1F
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
Forward current I F ( mA )
RMS ON-state current I T ( A rms )
0.2
0.1
50
40
30
20
10
0
- 30
0
20
40
60
80
Ambient temperature T a ( ˚C )
0
- 30
100
Fig. 3 Forward Current vs. Forward Voltage
Minimum trigger current I FT ( mA )
Forward current I F ( mA )
500
100
50
T a = 75˚C
50˚C
25˚C
20
0˚C
- 25˚C
10
5
2
1
0
0.5
1.0
1.5
2.0
Forward voltage V F ( V )
2.5
V D = 6V
R L = 100Ω
R G = 10kΩ
10
20kΩ
8
6
50kΩ
4
2
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
1000
V D = 6V
R L = 100Ω
T a = 25˚C
50
125
Fig. 6 Break Over Voltage vs.
Ambient Temperature
Break over voltage V BO ( V )
Minimum trigger current I FT ( mA )
100
12
0
- 30
3.0
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
25
50
75
100
Ambient temperature T a ( ˚C )
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
14
200
0
20
10
5
800
R G = 10kΩ
50kΩ
600
400
200
2
1
1
2
5
10
20
Gate resistance R G ( k Ω )
50
100
0
- 30
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
S12ME1/S12ME1F
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
Fig. 8 Holding Current vs.
Ambient Temperature
1
100
Critical rate of rise of OFF-state voltage
dV/dt ( V/ µ s )
R G = 20kΩ
V D = 6V
V DRM =
50
0.5
Holding current I H ( mA )
1/ 2 Rated
20
10
5
0
20
40
60
80
Ambient temperature T a ( ˚C )
10 - 5
20kΩ
50kΩ
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
Fig.10 Turn-on Time vs. Forward Current
100
V DRM = Rated
R G = 20kΩ
V D = 6V
R L = 100Ω
T a = 25˚C
10 - 6
Turn-on time t on ( µ s )
Repetitive peak OFF-state current I DRM ( A )
0.05
0.01
- 30
100
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient temperature
10 - 7
10 - 8
10 - 9
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
Fig.11 ON-state Current vs. ON-state Voltage
200
I F = 20mA
T a = 25˚C
160
ON-state current I T ( mA )
0.1
0.02
2
1
R G = 10kΩ
0.2
120
80
40
0
0
0.2
0.4 0.6 0.8 1.0 1.2
ON-state voltage V T ( V )
1.4
1.6
50
40
30
20
10
10
20
30
40 50
Forward current I F ( mA )
100
S12ME1/S12ME1F
■ Basic Operation Circuit
Medium/High Power Thyristor Drive Circuit
+ VCC
1
2
6
Load
5
VIN
CG
3
4
RG
ZS
AC 100V
ZS : Snubber circuit
Medium/High Power Triac Drive Circuit ( Zero-cross Operation )
+ VCC
1
6
2
5
VIN
AC 100V
RG CG
3
●
Load
4
Please refer to the chapter “ Precautions for Use” ( Page 78 to 93) .