S11MD5T/S21MD3TV/S21MD4TV High Noise-resistance Type Phototriac Coupler S11MD5T/S21MD3TV/ S21MD4TV ■ Features ■ Outline Dimensions 1. NO.5 pin completely sealed in the mold for external noise resistance 2. Built-in zero-cross circuit (S21MD4TV ) 3. High repetitive peak OFF-state voltage. S11MD5T V DRM : MIN. 400V S21MD3TV/S21MD4TV VDRM : MIN. 600V 4. Isolation voltage between input and output ( Viso : 5 000 Vrms ) 5. Recognized by UL : recognized, file No. E64380 S11MD5T/S21MD3TV S21MD4TV 6 Internal connection diagram 4 2 1 2.54± 0.25 6 3 1 2 3 7.62± 0.3 0.5TYP. 3.5± 0.5 3.35± 0.5 3.7± 0.5 1. For triggering of power triac ❈ Zero-cross circuit 0.9± 0.2 1.2± 0.3 7.12± 0.5 ■ Applications 4 6.5± 0.5 S11MD5T Anode mark ( Unit : mm ) 0.5± 0.1 0.26± 0.1 θ : 0 to 13 ˚ 1 Anode 2 Cathode 3 NC θ 4 Anode/ Cathode 6 Anode/ Cathode Marking of S21MD3TV : S21MD3T ■ Model Line-ups 100V 200V Marking of S21MD4TV : S21MD4T S11MD5T S21MD3TV/S21MD4TV ❈ Zero-cross circuit (S21MD4TV ) ■ Absolute Maximum Ratings Parameter Input Output Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current Repetitive peak OFF-state voltage ∗2 Isolation voltage Operating temperature Storage temperature ∗3 Soldering temperature ( Ta = 25˚C) Symbol IF VR IT Isurge VDRM Viso Topr Tstg Tsol Rating S11MD5T S21MD3TV/S21MD4TV 50 6 0.1 1.2 400 600 5 000 - 30 to + 100 - 55 to + 125 260 ∗1 Sine wave ∗2 40 to 60% RH, AC for 1 minute, f = 60Hz ∗3 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” Unit mA V A rms A V V rms ˚C ˚C ˚C S11MD5T/S21MD3TV/S21MD4TV ■ Electro-optical Characteristics Parameter S11MD5T/S21MD4TV S21MD3TV Reverse current Repetitive peak OFF-state current S11MD5T ON-state voltage S21MD3TV/S21MD4TV Holding current Critical rate S11MD5T/S21MD4TV of rise of OFFS21MD3TV state voltage Zero-cross S21MD4TV voltage ( Ta= 25˚C) Symbol Forward voltage Input Output VF IR IDRM Transfer characteristics I T = 0.1A IH VD = 6V V OX IFT Isolation resistance Turn-on time VT dV/dt Minimun trigger current RISO S11MD5T t on S21MD3TV S21MD4TV Conditions I F = 20mA I F = 30mA VR = 3V VDRM = Rated MIN. TYP. MAX. Unit - 1.2 1.4 V 0.1 100 500 1.3 1.7 1 - 10-5 10-6 2.0 2.5 3.5 - A A V V mA V/ µs V/ µs - - 35 V - - 10 mA 5 x 1010 1011 - Ω - 80 200 µs - 20 100 50 µs µs VDRM = 1/ 2 Rated Resistance load I F = 15mA VD = 6V RL = 100Ω DC500V 40 to 60% RH VD = 6V, I F = 20mA∗4 RL = 100Ω ∗4 S21MD3TV : IF=30mA Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) RMS ON-state current I T 0.10 0.05 50 40 30 20 10 0 - 30 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 0 - 30 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 S11MD5T/S21MD3TV/S21MD4TV Fig. 4 Minimum Trigger Current vs. Ambient Temperature 200 14 100 12 T a = 100˚C 75˚C 50˚C 50 Minimum trigger current I FT ( mA ) Forward current I F ( mA ) Fig. 3 Forward Current vs. Forward Voltage 25˚C 0˚C - 30˚C 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 10 S11MD5T 8 6 S21MD3TV 4 S21MD4TV 2 0 3.0 VD = 6V RL = 100Ω -30 Forward voltage V F ( V ) Fig. 5 Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature 1.6 1.2 S21MD3TV S11MD5T S21MD4TV 1.0 0.9 0.8 0 20 40 60 80 Ambient temperature T a ( ˚C ) 2.0 1.3 1.2 1.0 - 30 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 7 Holding Current vs. Ambient Temperature 10 I T = 100mA V D = 6V 5 S21MD3TV 1.8 S21MD4TV 1.7 1.6 1.5 Holding current I H ( mA ) 1.9 ON-state voltage V T ( V ) 1.4 1.1 Fig. 6-b ON-state Voltage vs. Ambient Temperature (S21MD3TV/S21MD4TV ) 1.4 - 30 I T = 100mA 1.5 1.1 0.7 - 30 100 Fig. 6-a ON-state Voltage vs. Ambient Temperature (S11MD5T ) ON-state voltage V T ( V ) Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25˚C) 1.3 0 20 40 60 80 Ambient temperature T a ( ˚C ) 2 S11MD5T 1 0.5 S21MD3TV S21MD4TV 0.2 0.1 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S11MD5T/S21MD3TV/S21MD4TV Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MD5T ) 2 2 T a = 25˚C Repetitive peak OFF-state current I DRM ( A ) Repetitive peak OFF-state current I DRM ( A ) T a = 25˚C Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltate (S21MD3TV/S21MD4TV ) 10 - 9 5 2 10 - 10 10 - 7 5 S21MD3TV 2 10 - 8 5 5 100 200 300 400 500 OFF-state voltage V D ( V ) 8 5 2 10- 9 5 2 10 - 10 5 2 10 - 11 2 10 - 6 5 2 5 2 200 5 2 10 - 9 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig.11 Zero-cross Voltage vs. Ambient Temperature (S21MD4TV ) V D = 6V RL = 100Ω T a = 25˚C R load I F = 15mA Zero-cross voltage VOX ( V ) Turn-on time t on ( µ s ) S21MD3TV 10 - 8 100 Fig.10 Turn-on Time vs. Forward Current (S11MD5T/S21MD3TV ) 100 S11MD5T 50 S21MD3TV 20 10 S21MD4TV 10 - 7 5 0 20 40 60 80 Ambient temperature T a ( ˚C ) 600 5 V DRM = Rated 5 - 30 300 400 500 OFF-state voltage V D ( V ) 10 - 5 V DRM = Rated 2 10- 200 Fig. 9-b Repetitive Peak OFF-state Current vs. Ambient Temperature (S21MD3TV/S21MD4TV ) Repetitive peak OFF-state current I DRM (A) Repetitive peak OFF-state current I DRM ( A ) 7 5 100 600 Fig. 9-a Repetitive Peak OFF-state Current vs. Ambient Temperature (S11MD5T ) 10- S21MD4TV 25 20 15 20 Forward current I F 50 ( mA ) 100 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S11MD5T/S21MD3TV/S21MD4TV ■ Basic Operation Circuit Fig.12 ON-state Current vs. ON-state Voltage 100 Medium/High Power Triac Drive Circuit I F = 20mA 90 T a = 25˚C ON-state current I T ( mA ) 80 + VCC 70 60 6 S21MD4TV VIN S11MD5T 3 40 S21MD3TV Load AC100V : S11MD5T AC200V : S21MD3TV 2 50 Zerocross Circuit 4 30 S21MD4TV 20 Note ) Please use on condition of the triac for power triggers. Zero-cross circuit is applied to S21MD4TV. 10 0 0 ● 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage VT ( V ) Please refer to the chapter “Precautions for Use.”