S11MS3/S21MS3/S21MS4 S11MS3/ S21MS3/S21MS4 High Density Surface Mount Type Mini-flat Package Phototriac Coupler ■ Features ■ Outline Dimensions 1.27± 0.25 6 5 4 S Anode mark S11MS3 S21MS3 Input Output 0.5+- 0.4 0.2 5 No external connection 6 Anode/ cathode ❈ Zero-cross circuit for S21MS4 ■ Absolute Maximum Ratings Forward current Reverse voltage ∗1 RMS ON-state current ∗2 Peak one cycle surge current Repetitive peak OFF-state voltage ∗3 Isolation voltage Operating temperature Storage temperatrue ∗4 Soldering temperature 5.3± 0.3 7.0+- 0.2 0.7 6˚ 1 Anode 3 Cathode 4 Anode/ cathode 1. For triggering of medium/high power triacs Parameter C0.4 Input side S21MS4 ■ Applications 3 ( Ta = 25˚C ) Symbol IF VR IT I surge VDRM Viso Topr Tstg Tsol Rating S21MS3/S21MS4 50 6 0.05 0.6 400 600 3 750 - 30 to +100 - 40 to +125 260 S11MS3 Unit mA V A rms A V V rms ˚C ˚C ˚C IT (A) 2 • IT θ 1, θ 2<= 90˚ θ2 180˚ 90˚ 0 360˚ θ1 Soldering area ∗1 The definition of conduction angle θ of effective ON current I T should be as shown in the right drawing. ∗2 50Hz sine wave ∗3 40 to 60% RH, AC for 1 minute ∗4 For 10 seconds, “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” 0.2mm or more - 4 0.2± For 200V lines 1 0.1±0.1 2.6± 0.2 For 100V lines 5 ❈ Zero-cross circuit 3 0.4± 0.1 3.6± 0.3 ■ Model Line-ups No built-in zero-cross circuit Built-in zero-cross circuit 1 6 0.05 Model No. 4.4± 0.2 2. Built-in zero-cross circuit ( S21MS4 ) 3. High isolation voltage between input and output ( Viso : 3 750Vrms ) 4. Recognized by UL, file No.E64380 Internal connection diagram 0.6MAX. 1. Ultra-compact, mini-flat package type ( 3.6 x 4.4 x 2.0mm ) ( Unit : mm ) θ S11MS3/S21MS3/S21MS4 ■ Electro-optical Characteristics Parameter Forward voltage Reverse current Repetitive peak OFF-state current ON-state voltage Holding current Critical rate of rise of OFF-state voltage Zero-cross S21MS4 voltage Minimum trigger current Isolation resistance S11MS3/S21MS3 Turn-on time S21MS4 Input Output Transfer characteristics ( Ta= 25˚C) Symbol VF IR I DRM VT IH dV/dt TYP. 1.2 1 000 MAX. 1.4 10 1 2.5 3.5 - Unit V µA µA V mA V/ µ s I F = 15mA, Resistance load - - 35 V I FT RISO VD = 6V, R L = 100Ω DC500V, 40 to 60% RH 5 x 1010 - 1011 - 10 100 50 mA Ω VD = 6V, R L = 100Ω , I F = 20mA µs Fig. 2 Forward Current vs. Ambient Temperature 60 60 50 50 Forward current I F ( mA ) RMS ON-state current I T ( mA rms ) MIN. 0.1 100 V OX t on Fig. 1 RMS ON-state Current vs. Ambient Temperature Conditions I F = 20mA VR = 3V V DRM = Rated I T = 0.05A VD = 6V V DRM = 1/ 2 • Rated 40 30 20 40 30 20 10 10 0 -30 0 0 50 Ambient temperature T a ( ˚C ) 100 - 30 0 50 Ambient temperature T a ( ˚C ) 100 Fig. 4-a Minimum Trigger Current vs. Ambient Temperature (S11MS3/S21MS3) Fig. 3 Forward Current vs. Forward Voltage 200 12 V D = 6V T a = 100˚C 75˚C 50˚C 50 20 Minimum trigger current I FT ( mA ) Forward current I F ( mA ) 100 25˚C 0˚C - 30˚C 10 5 2 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0 R L = 100Ω 10 8 6 4 2 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S11MS3/S21MS3/S21MS4 Fig. 4-b Minimum Trigger Current vs. Ambient Temperature (S21MS4) V D = 6V RL = 100Ω 12 10 8 6 4 2 0 - 30 1.1 1.0 0.9 0.8 - 30 100 1.2 1.8 ON-state voltage V T ( V ) 2.0 1.1 1.0 0.9 0.8 100 1.6 I T = 50mA S21MS4 1.4 1.2 S11MS3 S21MS3 1.0 0 20 40 60 80 Ambient temperature T a ( ˚C ) 10 0.8 - 30 100 Fig. 7-a Holding Current vs. Ambient Temperature (S11MS3/S21MS3) 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 7-b Holding Current vs. Ambient Temperature (S21MS4 ) V D = 6V VD = 6V 10 Holding current I H ( mA ) 5 2 1 0.5 0.2 0.1 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) Fig. 6 ON-state Voltage vs. Ambient Temperature 1.3 0.7 - 30 Holding current I H ( mA ) 1.2 0.7 0 20 40 60 80 Ambient temperature T a ( ˚C ) Fig. 5-b Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature (S21MS4 ) Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25˚C) 1.3 Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Ti = 25˚C) Minimum trigger current I FT ( mA ) 14 Fig. 5-a Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature (S11MS3/S21MS3 ) 5 2 1 0.5 0.2 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0.1 - 30 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 S11MS3/S21MS3/S21MS4 Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MS3 ) Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltage (S21MS3/S21MS4) 2 2 T a = 25˚C Repetitive peak OFF-state current I DRM ( A ) Repetitive peak OFF-state current I DRM ( A ) T a = 25˚C 10 - 9 5 2 S11MS3 10 - 10 10 - 9 2 S21MS3 10 - 10 5 5 100 200 300 400 500 OFF-state voltage V D ( V ) 100 600 Fig. 9 Relative Repetitive Peak OFF-state Current vs. Ambient Temperature 10 2 200 300 400 500 OFF-state voltage V D ( V ) R load I F = 15mA V DRM = 400V 10 1 10 0 10 - 1 10 - 2 -30 600 Fig.10 Zero-cross Voltage vs. Ambient Temperature (S21MS4 ) 30 Zero-cross voltage V OX ( V ) Relative repetitive peak OFF-state current I DRM ( Tj = T a ) /I RM ( Tj= 25˚C) S21MS4 5 25 20 15 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 ■ Basic Operation Circuit Fig.11 ON-state Current vs. ON-state Voltage 100 I F = 20mA Ta = 25˚C 90 S11MS3/ S21MS3/S21MS4 ON-state current I T ( mA ) 80 S11MS3 S21MS3 70 1 + VCC 6 60 3 S21MS4 50 VIN 40 Zerocross Circuit 30 Load AC100V (S11MS3 ) AC200V (S21MS3/S21MS4 ) 4 Zero-cross Circuit ( S21MS4 ) 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage V T ( V ) Please refer to the chapter “ Precautions for Use.” ( Page 78 to 93) . ●