SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS ( F1E23 ) Case : E-pack (Unit : mm) 230V 1.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters ● Power supplies of DC 12-24V input ● Product related to Integrated Service Digital Network RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（ DC） IS Total Power Dissipation PT Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Ratings -55∼150 150 230 ±20 1.5 3 1.5 10 Unit ℃ V A W VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbole V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time 2SK1195 ( F1E23 ) Conditions ID = 250μA, VGS = 0V VDS = 230V, VGS = 0V VGS = ±20V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VGS = 10V, ID = 1.5A, VDD = 200V VDS = 10V, VGS = 0V, f = 1MHZ ID = 1.5A, VGS = 10V, RL = 67Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 230 Typ. Max. 250 ±0.1 0.7 2 1.4 1.2 3 6.9 160 20 90 37 50 Unit V μA S 2 Ω 4 V 1.5 12.5 ℃/Ｗ nC pF 75 100 ns 2SK1195 Transfer Characteristics 3 Tc = −55°C 25°C 2.5 100°C Drain Current ID [A] 150°C 2 1.5 1 0.5 0 VDS = 10V pulse test TYP 0 2 4 6 8 Gate-Source Voltage VGS [V] 10 2SK1195 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK1195 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 0.2mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK1195 Safe Operating Area 3 1 100µs 200µs Drain Current ID [A] R DS(ON) limit 1ms 0.1 10ms DC Tc = 25°C Single Pulse 0.01 1 10 Drain-Source Voltage VDS [V] 100 230 Transient Thermal Impedance θjc(t) [°C/W] 0.1 10-4 1 10 10-3 2SK1195 Time t [s] 10-2 10-1 Transient Thermal Impedance 100 2SK1195 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss 10 Crss Tc=25°C TYP 1 0 50 100 150 Drain-Source Voltage VDS [V] 200 2SK1195 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK1195 Gate Charge Characteristics 20 200 VDS 15 VDD = 200V 100V 150 10 100 VGS 5 50 ID = 1.5A 0 0 2 4 6 Gate Charge Qg [nC] 8 10 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 250