SHINDENGEN HVX-2 Series Power MOSFET 2SK2677 N-Channel Enhancement type OUTLINE DIMENSIONS (FP10W90HVX2) Case : ITO-3P (Unit : mm) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol T stg Storage Temperature T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID I DP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation I AR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Pulse width 10Ês, Duty cycle 1/100 T ch = 150 T ch = 25 T ch = 25 Terminals to case,@AC 1 minute i Recommended torque F0.5 N¥m j Ratings -55`150 150 900 }30 10 20 10 65 10 260 26 2 0.8 Unit V A W A mJ kV N¥m HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage Æjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton Turn-Off Time toff 2SK2677 ( FP10W90HVX2 ) Conditions I D = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V I D = 5A, VDS = 10V I D = 5A, VGS = 10V I D = 1mA, VDS = 10V I S = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 10A VDS = 25V, VGS = 0V, f = 1MHZ I D = 5A, RL = 30¶, VGS = 10V Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 900 Typ. 4. 8 8. 0 1. 05 3. 0 2. 5 90 2150 50 210 140 440 Max. 250 }0. 1 Unit V ÊA S ¶ V 1. 4 3. 5 1. 5 1. 92 /L nC pF 250 740 ns 2SK2677 Transfer Characteristics 20 Tc = −55°C 25°C Drain Current ID [A] 15 100°C 10 150°C 5 VDS = 25V TYP 0 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2677 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 100 10 ID = 5.0A 1 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2677 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2677 Safe Operating Area 100 Drain Current ID [A] 10 100µs 200µs 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK2677 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK2677 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [°C] 150 2SK2677 Capacitance 10000 Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss 10 f=1MHz Ta=25°C TYP 1 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 1 0.1 10 IAS = 10A 1 Inductance L [mH] 10 EAS = 260mJ VDD = 100V VGS = 15V → 0V Rg = 35Ω Single Avalanche Current - Inductive Load EAR = 26mJ 2SK2677 100 2SK2677 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2677 Gate Charge Characteristics 500 20 400 15 VGS VDD = 400V 300 200V 100V 10 200 5 100 ID = 10A TYP 0 0 50 100 Gate Charge Qg [nC] 0 150 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS