SHINDENGEN VX-2 Series Power MOSFET 2SK3012 (F16W60VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case :: MTO-3P E-pack Case (Unit : mm) 600V 12A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 100-200V input ●Inverter ●Power Factor Control Circuit RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain Current（DC） ID IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25℃ TOR (Recommended torque : 0.5N･m） Mounting Torpue Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55～150 150 600 ±30 16 48 16 125 16 0.8 Unit ℃ V A W A N･m 2SK3012( F16W60VX2 ) VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V ID = 8A, VDS = 10V ID = 8A, VGS = 10V ID = 1mA, VDS = 10V IS = 8A, VGS = 0V junction to case VGS = 10V, ID = 16A, VDD = 400V VDS = 10V, VGS = 0V, f = 1MHZ ID = 8A, VGS = 10V, RL = 19Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 600 Typ. Max. 250 ±0.1 6.2 2.5 10.0 0.45 3 85 2300 180 480 130 260 0.6 3.5 1.5 1 Unit V μA S Ω V ℃/Ｗ nC pF 280 500 ns 2SK3012 Transfer Characteristics 32 Tc = −55°C 25°C 28 100°C Drain Current ID [A] 24 150°C 20 16 12 8 VDS = 25V pulse test TYP 4 0 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK3012 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 1 ID = 8A 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK3012 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK3012 Safe Operating Area 100 10 Drain Current ID [A] 100µs 200µs R DS(ON) limit 1 1ms 10ms DC 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK3012 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK3012 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [°C] 150 2SK3012 Capacitance 10000 Capacitance Ciss Coss Crss [pF] Ciss 1000 Coss Crss 100 f=1MHz Tc=25°C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 0.1 0.1 1 10 100 1 2SK3012 Inductance L [mH] EAR = 50mJ IAS = 16A 10 EAS = 500mJ VDD = 90V VGS = 15V → 0V Rg = 15Ω Single Avalanche Current - Inductive Load 100 2SK3012 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK3012 Gate Charge Characteristics 500 20 400 VDD = 400V 15 VGS 200V 100V 300 10 200 5 100 ID = 16A TYP 0 0 50 100 Gate Charge Qg [nC] 150 0 200 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS