SHINDENGEN VX-2 Series Power MOSFET 2SK2185 (F5F50VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case :: FTO-220 Case E-pack (Unit : mm) 500V5A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. APPLICATION ● Switching power supply of AC 100V input ● High voltage power supply ● Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（DC） IS P T Total Power Dissipation Single Pulse Avalanche Current IAS Tch = 25℃ ｄ ｉ ｓ Dielectric Strength Ｖ Terminals to case, AC 1 minute Mounting Torque ＴＯＲ （Recommended torque : 0.3N･m ） Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55∼150 150 500 ±30 5 15 5 30 5 2 0.5 Unit ℃ V A W A ｋＶ Ｎ・ｍ VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage θjc Theｒmal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time 2SK2185 ( F5F50VX2 ) Conditions ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 10V, VGS = 0V, f = 1MHZ ID = 2.5A, VGS = 10V, RL = 60Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 500 Typ. Max. 250 ±0.1 1.5 2.5 3.8 1.1 3.0 21 580 45 140 55 110 Unit V μA S 1.5 Ω 3.5 V 1.5 4.17 ℃/Ｗ nC pF 90 170 ns 2SK2185 Transfer Characteristics 10 Tc = −55°C Drain Current ID [A] 8 25°C 100°C 150°C 6 4 2 0 VDS = 25V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2185 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 ID = 2.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2185 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2185 Safe Operating Area 100 Drain Current ID [A] 10 100µs 200µs 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-5 0.1 1 10 100 10-4 10-3 2SK2185 10-1 Time t [s] 10-2 100 Transient Thermal Impedance 101 102 2SK2185 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss Crss Tc=25°C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK2185 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2185 Gate Charge Characteristics 20 400 15 VDD = 400V 200V 300 100V 10 VDS VGS 200 5 100 ID = 5A 0 0 10 20 30 Gate Charge Qg [nC] 40 50 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 500