SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 ( F3S90HVX2 ) N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Pulse width 10Ês, Duty cycle 1/100 T ch = 150 T ch = 25 T ch = 25 Ratings -55`150 150 900 }30 3 6 3 50 3 48 4.8 Unit V A W A mJ 2SK2665 ( F3S90HVX2 ) HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage Æjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton Turn-Off Time toff Conditions I D = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V I D = 1. 5A, VDS = 10V I D = 1.5A, VGS = 10V I D = 1mA, VDS = 10V I S = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 3A VDS = 25V, VGS = 0V, f = 1MHZ I D = 1. 5A, VDD = 150V, RL = 100¶ Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 900 Typ. 1. 5 2. 5 3. 5 3. 0 2. 5 30 630 16 67 40 140 Max. 250 }0. 1 4. 7 3. 5 1. 5 2. 5 Unit V ÊA S ¶ V /L nC pF 70 230 ns 2SK2665 Transfer Characteristics 6 Tc = −55°C 25°C Drain Current ID [A] 5 4 100°C 3 150°C 2 1 VDS = 25V TYP 0 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2665 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 100 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2665 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2665 Safe Operating Area 10 100µs Drain Current ID [A] 1 200µs 1ms R DS(ON) limit 0.1 10ms DC Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK2665 Time t [s] 10-1 100 Transient Thermal Impedance 101 2SK2665 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [°C] 150 2SK2665 Capacitance 10000 Capacitance Ciss Coss Crss [pF] 1000 Ciss 100 Coss Crss 10 f=1MHz Ta=25°C TYP 1 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 0.1 0.1 1 10 IAS = 3A 1 Inductance L [mH] 10 EAS = 48mJ VDD = 100V VGS = 15V → 0V Rg = 70Ω Single Avalanche Current - Inductive Load EAR = 4.8mJ 2SK2665 100 2SK2665 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2665 Gate Charge Characteristics 20 VDS 400 VGS 15 VDD = 400V 200V 300 100V 10 200 5 100 ID = 3A TYP 0 0 10 20 30 Gate Charge Qg [nC] 40 0 50 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 500