SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 ( F6F70HVX2 ) N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 240V input ● High voltage power supply ● Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS ID Continuous Drain Current（DC） Continuous Drain Current（Peak) IDP Continuous Source Current（DC） IS Total Power Dissipation PT Repetitive Avalanche Current IAR Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Dielectric Strength Vdis Mounting Torque TOR Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Pulse width≦10μs, Duty cycle≦1/100 Tch = 150℃ Tch = 25℃ Tch = 25℃ Terminals to case, AC 1 minute （Recommended torque ：0.3 N･m ） Ratings -55∼150 150 700 ±30 6 18 6 50 6 190 19 2 0.5 Unit ℃ V A W A mJ kV N･m 2SK2333 ( F6F70HVX2 ) HVX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Traｎｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 1mA, VGS = 0V VDS = 700V, VGS = 0V VGS = ±30V, VDS = 0V ID = 3A, VDS = 10V ID = 3A, VGS = 10V ID = 1mA, VDS = 10V IS = 3A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 6A VDS = 10V, VGS = 0V, f = 1MHZ ID = 3A, RL = 50Ω, VGS = 10V Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 700 Typ. Max. 250 ±0.1 3.0 2.5 5.0 1.5 3.0 35 1250 250 530 60 160 2.0 3.5 1.5 2.5 Unit V μA S Ω V ℃/Ｗ nC pF 110 250 ns 2SK2333 Transfer Characteristics Tc = −55°C 16 Drain Current ID [A] 25°C 12 100°C 8 150°C 4 0 VDS = 25V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2333 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 ID = 3A 1 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2333 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2333 Safe Operating Area 100 Drain Current ID [A] 10 100µs 200µs 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 0.01 0.1 1 10 0.001 10-4 Transient Thermal Impedance θjc(t) [°C/W] 10-3 10-2 2SK2333 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK2333 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [°C] 150 2SK2333 Capacitance 10000 Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss 10 Tc=25°C TYP 1 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 0.1 0.1 1 10 1 2SK2333 Inductance L [mH] EAR = 19mJ IAS = 6A 10 EAS = 190mJ VDD = 100V VGS = 15V → 0V Rg = 100Ω Single Avalanche Current - Inductive Load 100 2SK2333 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2333 Gate Charge Characteristics 20 VDS 400 15 VDD = 400V 200V 300 100V VGS 10 200 5 100 ID = 6A 0 0 10 20 30 Gate Charge Qg [nC] 40 50 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 500