SHINDENGEN VR Series Power MOSFET F05B23VR N-Channel Enhancement type OUTLINE DIMENSIONS Case : B-pack (Unit : mm) 230V 0.5A FEATURES ●Applicable to 4V drive. ●The static Rds(on) is small. ●Built-in ZD for Gate Protection. APPLICATION ●DC/DC converters ●Power supplies of DC 12-24V input ●Product related to Integrated Service Digital Network RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） □ PT On alumina substrate, 50.8mm , substrate thickness 0.64t, Ta = 25℃ Ratings Unit -55～150 ℃ 150 230 V ±20 0.5 1 A 0.5 1.5 W Total Power Dissipation 3.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage θja Thermal Resistance θjc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss ton Turn-On Time toff Turn-Off Time F05B23VR Conditions ID = 250μA, VGS = 0V VDS = 230V, VGS = 0V VGS = ±20V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to ambient, on alumina substrate junction to case VGS = 10V, ID = 0.5A, VDD = 200V VDS = 10V, VGS = 0V, f = 1MHZ ID = 0.5A, VGS = 10V, RL = 200Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 230 Typ. Max. 250 ±0.1 0.2 2 0.4 5.5 3 2.7 45 4.5 30 30 50 Unit V μA S 8 Ω 4 V 1.5 83.3 ℃/Ｗ 35.7 nC pF 60 100 ns F05B23VR Transfer Characteristics 1 Ta = −55°C 25°C 100°C Drain Current ID [A] 0.8 150°C 0.6 0.4 0.2 0 VDS = 10V pulse test TYP 0 2 4 6 8 Gate-Source Voltage VGS [V] 10 Static Drain-Source On-state Resistance RDS(ON) [Ω] F05B23VR Static Drain-Source On-state Resistance 10 1 ID = 0.5A VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 F05B23VR Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 0.2mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 F05B23VR Safe Operating Area 1 100µs 200µs R DS(ON) limit Drain Current ID [A] 0.1 1ms 10ms 0.01 DC Ta = 25°C Single Pulse Alumina substrate 0.001 1 10 Drain-Source Voltage VDS [V] 100 230 F05B23VR Safe Operating Area 1 100µs 200µs R DS(ON) limit Drain Current ID [A] 0.1 1ms 10ms DC 0.01 Tc = 25°C Single Pulse 0.001 1 10 Drain-Source Voltage VDS [V] 100 230 Transient Thermal Impedance θja [°C/W] 0.1 10-4 1 10 100 1000 10-3 10-2 Time t [s] 100 101 102 Alumina substrate 50.8mm2 × 0.64mm Transient Thermal Impedance 10-1 F05B23VR 103 Transient Thermal Impedance θjc(t) [°C/W] 0.1 10-4 1 10 100 1000 10-3 10-2 Time t [s] 100 101 Transient Thermal Impedance 10-1 F05B23VR 102 103 F05B23VR Capacitance 1000 Capacitance Ciss Coss Crss [pF] 100 Ciss Coss 10 Crss 1 Tc=25°C TYP 0.1 0 50 100 150 Drain-Source Voltage VDS [V] 200 F05B23VR Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 F05B23VR Gate Charge Characteristics 250 20 200 15 VDD = 200V 100V 150 VGS 10 100 5 50 ID = 0.5A TYP 0 0 1 2 3 Gate Charge Qg [nC] 4 5 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS