SHINDENGEN M1FS6

SHINDENGEN
Schottky Rectifiers (SBD)
M1FS6
Single
Case
Case :: M1F
Unit : mm
6 0V 1.2A
FEATURES
● Small
SMT
● Tj150℃
● Low VF=0.45V
● PRRSM avalanche
guaranteed
APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office Equipment
● Telecommuniction
RATINGS
●Absolute Maximum Ratings (If not specified Tl=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
Average Rectified Forward Current
50Hz sine wave, R-load Ta=25℃ On alumina substrate
IO
Peak Surge Forward Current
Repetitive Peak Surge Reverse Power
IFSM
PRRSM
50Hz sine wave, R-load Ta=25℃ On glass-epoxy substrate
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃
Pulse width 10μs, Tj=25℃
●Electrical Characteristics (If not specified Tl=25℃)
Item
Symbol
Conditions
Forward Voltage
VF
IF=1.1A, Pulse measurement
Reverse Current
IR
VR=60V, Pulse measurement
Junction Capacitance
f=1MHz, VR=10V
Cj
θjl junction to lead
Thermal Resistance
θja junction to ambient On alumina substrate
junction to ambient On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55∼150
150
60
65
1.2
0.75
40
60
Unit
℃
℃
V
V
A
Ratings
Max.0.58
Max.1.0
Typ.53
Max.20
Max.108
Max.186
Unit
V
mA
pF
A
W
℃/W
M1FS6
Forward Voltage
Forward Current IF [A]
10
Tl=150°C [MAX]
Tl=150°C [TYP]
1
Tl=25°C [MAX]
Tl=25°C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
10
0.1
100
10
Junction Capacitance
Reverse Voltage VR [V]
1
M1FS6
f=1MHz
Tl=25°C
TYP
M1FS6
Reverse Current
100
Tl=150°C [MAX]
Tl=150°C [TYP]
10
Reverse Current IR [mA]
Tl=125°C [TYP]
Tl=100°C [TYP]
1
Tl=75°C [TYP]
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
Reverse Voltage VR [V]
50
60
M1FS6
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
3.5
3
DC
D=0.05
0.1
2.5
0.2
2
0.3
1.5
0.5
1
SIN
0.5
0
0.8
0
10
20
30
40
50
60
70
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
M1FS6
Forward Power Dissipation
1.4
Forward Power Dissipation PF [W]
DC
1.2
D=0.8
SIN
1
0.2
0.5
0.3
0.1
0.8
0.05
0.6
0.4
0.2
0
0
0.5
1
1.5
2
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
M1FS6
Derating Curve
Average Rectified Forward Current IO [A]
2.4
2
Alumina substrate
Soldering land 2mmφ
Conductor layer 20µm
Substrate thickness 0.64mm
DC
D=0.8
1.6
0.5
SIN
1.2
0.3
0.2
0.8
0.1
0.05
0.4
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = 30V
IO
0
0
VR
tp
D=tp /T
T
M1FS6
Derating Curve
Average Rectified Forward Current IO [A]
1.4
DC
1.2
Glass-epoxy substrate
Soldering land 2mmφ
Conductor layer 35µm
D=0.8
1
0.5
0.8
SIN
0.6
0.3
0.2
0.4
0.1
0.2
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = 30V
IO
0
0
VR
tp
D=tp /T
T
M1FS6
Peak Surge Forward Capability
IFSM
50
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
40
30
20
10
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP