SHINDENGEN M2FM3

SHINDENGEN
Schottky Rectifiers (SBD)
Single
OUTLINE DIMENSIONS
M2FM3
30V 6A
RATINGS
œAbsolute Maximum Ratings (Tc=25Ž)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Average Rectified Forward Current
50Hz sine wave, R-load Ta=25Ž On glass-epoxy substrate
IO
Peak Surge Forward Current
œElectrical Characteristics
Item
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
IFSM
Tc=25Ž
Symbol
VF1
VF2
IR
Cj
Æjc
Æjl
Æja
50Hz sine wave, R-load Tc=99Ž
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
Conditions
IF=2.0A, Pulse measurement
IF=6.0A, Pulse measurement
VR=VRM, Pulse measurement
f=1MHz, VR=10V
junction to case
junction to lead
junction to ambient On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55`150
150
30
4.3
6.0
120
Unit
Ž
Ž
V
A
Ratings
Max.0.40
Max.0.46
Max.0.2
Typ.240
Max.14
Max.16
Max.55
Unit
V
A
mA
pF
Ž/W
M2FM3
Forward Voltage
50
20
Forward Current IF [A]
10
5
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc= 25°C [MAX]
Tc= 25°C [TYP]
2
1
0.5
0.2
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
M2FM3
Forward Power Dissipation
Forward Power Dissipation PF [W]
5
DC
4
D=0.8
0.3
SIN
0.5
0.2
3
0.1
0.05
2
1
0
0
2
4
6
8
10
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp/T
T
M2FM3
Peak Surge Forward Capability
IFSM
140
10ms 10ms
Peak Surge Forward Current IFSM [A]
120
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
100
80
60
40
20
0
1
2
5
10
20
Number of Cycles [cycle]
50
100
M2FM3
Reverse Current
100
Tc=150°C [TYP]
Tc=125°C [TYP]
Reverse Current IR [mA]
10
Tc=100°C [TYP]
Tc=75°C [TYP]
1
Tc=50°C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
Reverse Voltage VR [V]
30
35
40
M2FM3
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
5
4
DC
D=0.05
0.1
0.2
3
0.3
2
0.5
1
SIN
0.8
0
0
5
10
15
20
25
30
35
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp/T
T
M2FM3
Junction Capacitance
2000
f=1MHz
Tl=25°C
TYP
Junction Capacitance
Cj [pF]
1000
500
200
100
50
20
10
0.1
0.2
0.5
1
Reverse Voltage
2
5
VR [V]
10
20
30
M2FM3
Derating Curve
Average Rectified Forward Current IO [A]
12
10
DC
D=0.8
8
0.5
6 SIN
0.3
0.2
4
0.1
0.05
2
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 15V
IO
0
0
VR
tp
D=tp/T
T
M2FM3
Derating Curve
Average Rectified Forward Current IO [A]
12
10
DC
D=0.8
8
0.5
6 SIN
0.3
0.2
4
0.1
0.05
2
0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [°C]
VR = 15V
IO
0
0
VR
tp
D=tp/T
T
Derating Curve
M2FM3
Average Rectified Forward Current IO [A]
8
7 DC
6
Glass-epoxy substrate
Conductor layer 35um
D=0.8
5 0.5
SIN
4 0.3
3 0.2
0.1
2
0.05
1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = 15V
IO
0
0
VR
tp
D=tp/T
T
M2FM3
Transient Thermal Impedance
100
Transient Thermal Impedance
Æjc,Æjl,Æja [°C/W]
Æja
Æjl
Æjc
10
1
0.1
0.01
10-4
10-3
10-2
10-1
Time
100
t [s]
101
102
103
M2FM3
θja -
Conductor pattern area
140
100
80
θja
[°C/W]
120
60
40
20
0
1
10
100
Conductor pattern area
1000
[mm2]