SIGE SE1000W

SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Applications
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Product Description
SONET/SDH-based transmission systems, test
equipment and modules
OC-3 fibre optic modules and line termination
ATM and FDDI optical receivers
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1000W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features single-ended or
differential outputs, selectable by wire bond options,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. For differential outputs, a
decoupling capacitor on the supply is the only
external circuitry required.
Features
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Single +5 V power supply
Input noise current = 12 nA rms when used with a
0.5 pF detector
Transimpedance gain = 15 kΩ into a 50 Ω load
(single-ended)
On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
50 Ω single-ended or 100 Ω differential wire bond
selectable outputs
Bandwidth (-3 dB) = 150 MHz (min)
Wide data rate range = 10 Mb/s to 155 Mb/s
High input bias level = 2 V
Minimal external components, supply decoupling
only
Operating junction temperature range = -40°C to
+95°C
Equivalent to Nortel Networks AB52
Noise performance is optimized for 155 Mb/s
operation, with a calculated rms noise based
-10
sensitivity of –41 dBm for 10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.95 A/W, with an infinite extinction
ratio source.
Ordering Information
Type
SE1000W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Automatic Gain Control
SE1000
TzAmp
155 Mb/s
Integrator
Rectifier
50 Ω
Rf
TZ_IN
Input
Current
Tz Amp
Output
Driver
OUTP
50 Ω
OUTN
50 Ω
Bandgap
Reference
GND or –ve supply
40-DST-01 § Rev 1.5 § May 24/02
Power
Supply
Rejection
ACGND
Wire bond option for single-ended operation
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Bondpad Diagram
VCC2
1
VCC1
2
10
VCC1
9
OUTP
8
OUTN
Top
View
TZ_IN
3
4
5
VEE2
ACGND
6
VEE1
7
VEE1
Bondpad Description
Pad No.
Name
Description
1
VCC2
Positive supply (+5.0 V), front end circuitry only.
2
VCC1
3
TZ_IN
Positive supply (+5.0 V), pads 2 & 10 are connected on chip. Only one pad needs to
be bonded.
Input pad (connect to photodetector cathode).
4
VEE2
5
ACGND
6
VEE1
7
VEE1
8
OUTN
Negative supply (0V) – Note this is separate ground for the input stage, which is AC
coupled on chip. There is no DC current through this pad.
Bond option: Connected to external capacitor to ground for single-ended operation
(recommended 1 nF); unconnected for differential operation.
Negative supply (0V), pads 6 & 7are connected on chip. Only one pad needs to be
bonded.
Negative supply (0V), pads 6 & 7 are connected on chip. Only one pad needs to be
bonded.
Negative differential voltage output; leave unconnected for single-ended operation.
9
OUTP
Positive differential or single-ended voltage output.
10
VCC1
Positive supply (+5.0 V), pads 2 & 10 are connected on chip. Only one pad needs to
be bonded.
40-DST-01 § Rev 1.5 § May 24/02
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Functional Description
Amplifier Front-End
The transimpedance front-end amplifies an input
current from a photodetector, at pin TZ_IN, to produce
an output voltage with the feedback resistor Rf
determining the level of amplification (see the
functional block diagram on page 1). An automatic
gain control loop varies this resistor, to ensure that
the output from the front-end does not saturate the
output driver stage that follows. This gain control
allows input signals of up to 2.6 mA peak.
The input pin TZ_IN is biased at 3 V below the supply
voltage VCC, allowing a photodetector to easily be
reverse biased by connecting the anode to ground,
and hence enabling s ingle rail operation.
to ground (recommend 1 nF).
Under these
circumstances, OUTP operates as a single-ended
50 Ω output. In both cases, increasing optical input
level gives a positive-going output signal on the
OUTP pin.
Automatic Gain Control (AGC)
The AGC circuit monitors the voltages from the output
driver and compares them to an internal reference
level produced via the on-chip bandgap reference
circuit. When this level is exceeded, the gain of the
front-end is reduced by controlling the feedback
resistor Rf.
A long time-constant integrator is used within the
control loop of the AGC with a typical low frequency
cut-off of 5 kHz.
The front-end stage has its own supply pins, VCC2
(+5 V) and VEE2 (0 V), to achieve optimum noise
performance and maintain integrity of the high-speed
signal path. The remainder of the circuitry uses the
supply pins VCC1 (+5 V) and VEE1 (0 V).
Power Supply Rejection
Output driver stage
This stable DC reference minimizes the variation in
the noise and bandwidth performance of the circuit
due to power supply variation of +4.7 V to +5.3 V.
The output driver acts as a buffer stage, capable of
swinging up to 150 mVpk-pk into a 50 Ω load (or
300 mVpk-pk differential into a 100 Ω load). The
small output swings allow ease of use with low
voltage post amplifiers (e.g. 3.3 V parts).
The output can be configured in a differential or
single-ended mode. For differential operation, the pad
ACGND is not wire bonded and the circuit provides a
fully balanced 100 Ω output, on the pins OUTP and
OUTN. For single-ended operation, the ACGND pad
is required to be wire bonded to an external capacitor
40-DST-01 § Rev 1.5 § May 24/02
An on-chip power supply rejection circuit is used to
achieve both single-ended and differential rejection
from the +5 V VCC rail.
The AC rejection ensures that performance is not
degraded by noise on the power supply. The circuit
achieves a power supply rejection on the outputs of
40 dB for both single-ended and differential operation,
up to 100 kHz. The use of external decoupling will
help to remove any unwanted signals at higher
frequencies.
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.
Symbol
Parameter
Min
Max
Unit
VCC
Supply Voltage
–0.7
6.0
V
VIO
Voltage at any input or output
–0.5
VCC+0.5
V
IIO
Current sourced into any input or output except
TZ_IN
–20
20
mA
IIO
Current sourced into pin TZ_IN
–5
5
mA
VESD
Electrostatic Discharge (100 pF, 1.5 kΩ) except
TZ_IN
–2
2
kV
VESD
Electrostatic Discharge (100 pF, 1.5 kΩ) pin
TZ_IN
–0.25
0.25
kV
Tstg
Storage Temperature
–65
150
°C
Recommended Operating Conditions
Symbol
Parameter
Min
Typ
Max
Unit
5.0
5.3
V
95
°C
Typ
Max
Unit
39
58
mA
VCC
Supply Voltage
4.7
Tj
Operating Junction Temperature
–40
DC Electrical Characteristics
Symbol
Parameter
Min
ICC
Supply Current
lagc
AGC Threshold
Vin
Input Bias Voltage
Vout
Output Bias Voltage
2.9
Rout
Output Resistance
35
40-DST-01 § Rev 1.5 § May 24/02
µA pk-pk
4
VCC–3.2
VCC–3.0
50
VCC–2.7
V
3.5
V
65
Ω
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
AC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
150
Unit
BW (3dB)
Small Signal Bandwidth at –3dB point
MHz
Tz
Single-ended Transimpedance (50 Ω on output,
f = 50 MHz)
11
Dri
Input Data Rate
10
Voutmax
Maximum Differential Output Voltage
Flf
Low Frequency Cut-off
5
kHz
PSRR
Power Supply Rejection Ratio (single-ended or
differential) up to 100 kHz
40
dB
lOL
Input Current before overload (155 Mb/s NRZ
data)
2600
µA pk-pk
Pol
Optical Overload
+1.4
dBm
Nrms
Input Noise Current (in 100 MHz)
15
12
20
kΩ
155
Mb/s
300
mV pk-pk
15
nA rms
DC and AC electrical characteristics are specified under the following conditions :
Supply Voltage (VCC).........................................4.7 V to 5.3 V
Junction Temperature (Tj)..................................–40°C to 95°C
Load Resistor (RL)...............................................50 Ω AC coupled via 220 nF (single-ended)
Photodetector Capacitance (Cd).......................0.5 pF
Input bond wire inductance................................1 nH
Photodetector responsivity.................................0.95 A/W
Transimpedance (Tz) measured with 1 µA mean photocurrent
40-DST-01 § Rev 1.5 § May 24/02
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Bondpad Configuration
The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in
microns (µm).
Pad No.
Name
X
Coordinate
(µm)
Y
Coordinate
(µm)
1
VCC2
-307.3
679.0
2
VCC1
-307.3
549.0
3
TZ_IN
-307.3
315.0
4
VEE2
0
0
5
ACGND
130.0
0
6
VEE1
260.0
0
7
VEE1
390.0
0
8
OUTN
690.7
155.0
9
OUTP
690.7
285.0
10
VCC1
690.7
679.0
40-DST-01 § Rev 1.5 § May 24/02
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
The diagram below shows the bondpad configuration of the SE1000W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. There are two
VCC1 and two VEE1 pads for ease of wire bonding; these pad pairs are connected on-chip and only one pad of each
type is required to be bonded out.
Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.
394.0
Top
View
130.0
130.0
130.0
307.3
155.0 130.0
126.0
315.0
925.0
234.0
130.0
998.0
300.7
123.0
Side View
400.0
1250.0
All Dimensions in Microns (µm)
40-DST-01 § Rev 1.5 § May 24/02
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Applications Information
For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the
first diagram below.
Note that the two VCC1 pads (2, 10) are connected on-chip, as are the VEE1 pads (6, 7), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 and VCC2 pads are not connected on chip to VEE1
and VCC1 respectively, and must be bonded out separately.
Connections for differential operation:
+5 V
1
VCC2
3
VEE2
4
1 nF min
10
VCC1
TZ Amplifier
SE1000W
TZ_IN
PIN
2
VEE1
6
7
9
OUTP
OUTN
8
To 50 O loads,
AC coupled
ACGND
5
NC
0 V or
–ve bias
0V
Connections for single-ended operation:
+5 V
1
VCC2
3
VEE2
4
1 nF min
10
VCC1
TZ Amplifier
SE1000W
TZ_IN
PIN
2
VEE1
6
7
9
To 50 O load,
AC coupled
OUTP
OUTN
8
NC
ACGND
5
1 nF
0 V or
–ve bias
0V
40-DST-01 § Rev 1.5 § May 24/02
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
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Fax:
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Phone: +44 1223 598 444
Fax:
+44 1223 598 035
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change
information at any time without notification.
Preliminary
The datasheet contains information from the design target specification. SiGe Semiconductor reserves the right to change
information at any time without notification.
Final
The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change
information at any time without notification. Production testing may not include testing of all parameters.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor Inc.
LightCharger™ is a trademark owned by SiGe Semiconductor.
Copyright 2002 SiGe Semiconductor
All Rights Reserved
40-DST-01 § Rev 1.5 § May 24/02
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