SIGE PA2423

PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Product Description
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Flip chip and chip-on-board applications
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 47% poweradded efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
tm
Class 1 Bluetooth applications.
Features
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
+22.5 dBm at 47% Power Added Efficiency
Low current 80 mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
-40C to +85C temperature range
Gold bump bare die (0.63mm x 0.96mm)
An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetoothtm specification 1.1.
Ordering Information
Part
PA2423G
PA2423G-EV
The PA2423G operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 120 mA.
Package
Gold bump bare
die
Shipping
Method
The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.
Diced wafer
Waffle pack
Evaluation kit
Functional Block Diagram
V CTL
Bias Generator
IN
Stage 1
GND
DOC # 05PDS003
Rev 5
Interstage
Match
V CC1
07/26/2001
V CC0
V RAMP
Ramp
Circuitry
Stage 2
OUT/ V CC2
GND
Page 1
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Pad Description
For reference of pad numbers to the package drawings, see pages 4 and 5.
Number
Name
1
IN
2
VRAMP
3
Description
Pad Coordinate, Center of Pad
(lower left corner is (0.0))
PA input
X = 192µm ± 10µm, Y = 315µm ± 10µm
PA enable/disable control input
X = 192µm ± 10µm, Y = 515µm ± 10µm
GND1
Ground
X = 352µm ± 10µm, Y = 515µm ± 10µm
4
VCTL
Output power level control
X = 512µm ± 10µm, Y = 515µm ± 10µm
5
GND2
Ground
X = 672µm ± 10µm, Y = 515µm ± 10µm
6
GND3
Ground
X = 832µm ± 10µm, Y = 515µm ± 10µm
7
OUT/VCC2
PA output and stage2 collector supply voltage
X = 752µm ± 10µm, Y = 315µm ± 10µm
8
GND4
Ground
X = 832µm ± 10µm, Y = 115µm ± 10µm
9
GND5
Ground
X = 672µm ± 10µm, Y = 115µm ± 10µm
10
VCC1
Stage1 collector supply voltage
X = 512µm ± 10µm, Y = 115µm ± 10µm
11
GND6
Ground
X = 352µm ± 10µm, Y = 115µm ± 10µm
12
VCC0
Ramp supply voltage
X = 192µm ± 10µm, Y = 115µm ± 10µm
Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
-0.3
+3.6
V
VCTL
Control Voltage
-0.3
VCC
V
Ramping Voltage
-0.3
VCC
V
+8
dBm
VRAMP
IN
RF Input Power
TA
Operating Temperature Range
-40
+85
°C
Storage Temperature Range
-40
+150
°C
+150
°C
TSTG
Tj
Maximum Junction Temperature
Operation in excess of any one of the above Absolute Maximum Ratings may result in permanent damage. This device is a
high performance RF integrated circuit with EST rating < 600V and is ESD sensitive. Handling and assembly of this device
should be at ESD protected workstations.
DOC # 05PDS003
Rev 5
07/26/2001
Page 2
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω ,unless otherwise noted.
Symbol
Note
VCC
Parameter
Supply Voltage
Min.
Typ.
Max.
Unit
3.0
3.3
3.6
V
150
mA
ICC
1
Supply Current (ICC = IVCC0 + IVCC1 + IVCC2 )
120
∆ICCtemp
3
Supply Current variation over temperature, (-40°C < TA <+85°C)
25
VCTL
ICTL
VRAMP
Istby
PA Output Power Control Voltage Range
1
Current sourced by VCTL Pin
3
Logic High Voltage
3
Logic Low Voltage
1
Leakage Current when VRAMP = 0V
0
200
%
VCC
V
250
µA
2.0
V
0.5
0.8
V
10
µA
AC Electrical Characteristics
Conditions: VCC0 =VCC1 =VCC2 =VRAMP =3.3V, VCTL =3.3V,PIN =+2 dBm, TA =25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω, unless otherwise noted
Symbol
Note
fL-U
3
Frequency Range
240
0
1
Output Power @ PIN =+2 dBm,VCTL = 3.3V
20.0
1
POUT
∆PTEMP
dP OUT /dVCTL
Parameter
Min
.
Typ.
Max. Unit
2500
MHz
22.5
23.5
dBm
Output Power @ PIN =+2 dBm,VCTL =0.4V
-8
0
dBm
3
POUT variation over temperature (-40°C <TA <+85°C), VCTL =3.3V
1
2
dB
3
Control Voltage Sensitivity
60
120
dBm/V
Power Added Efficiency at +22.5 dBm Output Power
47
PAE
%
GVAR
3
2f, 3f, 4f, 5f
3,4
Gain Variation over band (2400-2500 MHz)
0.7
1
dB
Harmonics
-35
-30
dBc
IS21IOFF
2
Isolation in “OFF” State, PIN =+2dBm,VRAMP =0V
20
25
dB
IS12 I
2
Reverse Isolation
32
42
dB
STAB
2
Stability (PIN = +2dBm, Load VSWR = 6:1)
All non-harmonically related
outputs less than -50 dBc
Notes: (1) Guaranteed by production test at TA =25°C.
(2) Guaranteed by design only.
(3) Guaranteed by design and characterization.
(4) Harmonic levels are greatly affected by topology of external matching networks.
(5) RF characteristics specified above are for direct die attach (Flip-chip) on SiGe Applications
Board. For wire bonded applications there may be some degradation in performance due to
effects of bond wires and interconnect.
DOC # 05PDS003
Rev 5
07/26/2001
Page 3
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Gold Bump Bare Die - Top and Side Views
The first drawing provides the top view of the gold bump bare die (gold bumps on top surface). This view
should be used for the chip-on-board mounting. The second drawing illustrates the side view of the die.
960µm ± 20 µm
2
3
4
60±0µm
60±0µm
5
1
60±0 µm
60±0µm
100±0µm
100±0 µm
630µm±20µm
6
7
460±0µm
45o
100±0µm
60±0µm
142µm±10µm
12
100±0µm
100±0µm
60±0 µm
11
60±0µm
60±0µm
10
9
65µm±10µm
8
(X=0,Y=0)
Gold
25µm±3µm
SILICON
300µm±5 µm
DOC # 05PDS003
Rev 5
07/26/2001
Page 4
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Gold Bump Bare Die – Bottom View
This drawing shows the gold bump bare die when viewed from the bottom of the die (without gold bumps).
This view and pintout orientation should be used for flip chip mounting – top surface of die (with gold bumps)
is inverted to make contact with PCB.
960µm ± 20µm
12
11
10
60±0µm
60±0µm
9
60±0µm
60±0 µm
100±0µm
100±0 µm
1
8
460±0µm
7
45o
100±0µm
60±0µm
142µm±10µm
2
100±0 µm
100±0µm
60±0µm
60±0 µm
3
4
60±0µm
5
6
65µm±10µm
(X=0,Y=0)
DOC # 05PDS003
Rev 5
07/26/2001
Page 5
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Typical Performance Characteristics
SiGe PA2423G-EV evaluation board, VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f =
2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted)
Pout, Icc vs Supply Voltage
PAE vs Input Power
150
23
142
45
Output Power
(dBm)
Supply current
(mA)
24
50
40
134
21
126
20
118
19
110
18
102
17
94
10
16
86
5
15
78
14
70
2.4
2.6
2.8
3
3.2
3.4
PAE (%)
22
35
30
25
20
15
0
-28
-24
-20
-16
-12
-8
-4
0
4
8
Input Power(dBm)
3.6
Vcc(V)
Pout
Icc
Output Power vs Control Voltage
Supply Current vs Control
Voltage
Output Power
(dBm)
Supply Current
(mA)
25
140
120
100
80
60
20
15
10
5
0
-5
-10
-15
-20
40
0.4
20
0.9
1.4
1.9
2.4
2.9
3.4
Vctl(V)
0
0.4
0.9
Pin=-4dBm
Pin=0dBm
Pin +2dBm
DOC # 05PDS003
1.4
1.9
2.4
2.9
3.4
Pin=-4dBm
Pin=+2dBm
Vctl(V)
Rev 5
07/26/2001
Pin=0dBm
Page 6
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Pout vs Frequency
20
25.00
15
20.00
10
15.00
5
10.00
0
5.00
-28
-24
-20
-16
-12
-8
-4
0
4
Gain (dB)
30.00
Output
Power
(dBm)
25
Output Power (dBm)
Output Power, Gain vs Input
Power
8
24.0
23.0
22.0
21.0
20.0
19.0
18.0
2.2
2.3
Input Power (dBm) Gain
Pout
2.4
2.5
2.6
2.7
Frequency (GHz)
Harmonic Output Spectrum
Icc vs Frequency
30
Output Power (dBm)
20
Supply Current (mA)
140
10
130
120
110
0
-10
100
-20
90
-30
80
70
-40
60
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
-50
2.7
1
Frequency (GHz)
2
3
4
5
6
7
8
9
10
11
12
13
Frequency (GHz)
PA output spectrum with BT modulated signal
30
RF Output Power (dBm) into 50R
20
10
0
-10
-20
-30
-40
-50
-60
2.4475
2.4485
2.4495
2.4505
2.4515
2.4525
Frequency (GHz)
DOC # 05PDS003
Rev 5
07/26/2001
Page 7
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423G. The order
part number is PA2423G-EV. The evaluation board is intended to simplify the testing with respect to RF
performance of this power amplifier.
The application note, 05AN007 provides the supporting information for using the evaluation board. It contains
information on the schematic, bill of materials and recommended layout for the power amplifier and the input
and output matching networks. To assist in the design process, this layout is available, upon request, in
gerber file format.
Using VRAMP
VRAMP is a digital pin used to power-up and power-down the PA2423G in Time Duplex systems such as
Bluetoothtm 1.1. During receive mode, VRAMP voltage is pulled down, PA2423G acts as a 25 dB isolation block
between the radio and the antenna while consuming a modest 1uA. In transmit mode, VRAMP voltage is pulled
to VCC and PA2423G offers 19 dB to 21dB of large signal gain. The rise and fall time are in the order of 12usec.
Using VCTL
VCTL is an analog pin that is designed to control the gain of PA2423G. Applying a voltage between 0V and
Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to
PA2423G, the VCTL function can greatly optimize the PAE of the system at all four Bluetoothtm transmitted
power levels.
By applying approximately 1.4V to VCTL, for example, a Class1 radio can be modified to a Class2 radio with
the PA2423G consuming only 15mA.
By implementing a resistor DAC, the VCTL pin can interface with Bluetoothtm transceivers offering digital and
programmable outputs.
DOC # 05PDS003
Rev 5
07/26/2001
Page 8
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
http://www.sige.com
Headquarters: Canada
Phone: +1 613 820 9244
Fax:
+1 613 820 4933
2680 Queensview Drive
Ottawa ON K2B 8J9 Canada
[email protected]
U.S.A.
United Kingdom
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Suite 135
Cupertino, CA 95014-2358
1010 Cambourne Business Park
Cambourne
Cambridge CB3 6DP
Phone: +1 408 973 7835
Fax:
+1 408 973 7235
Phone: +44 1223 598 444
Fax:
+44 1223 598 035
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc.
assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any
infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by
implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life
support applications or systems without express written approval from SiGe Semiconductor Inc.
The Bluetooth trademarks are owned by Bluetooth SIG Inc., USA.
Copyright 2001 SiGe Semiconductor
All Rights Reserved
DOC # 05PDS003
Rev 5
07/26/2001
Page 9