Silan
Semiconductors SC9102C/D
ABSOLUTE MAXIMUM RATINGS
(Tamb=25°C, All voltage referenced to Vss, unless otherwise specified)
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Input Voltage
VDD
6.0
V
VIN
-0.3~VDD+0.3
V
Power Dissipation
PD
500
mW
Operating Temperature
Topr
-25~+70
°C
Storage Temperature
Tstg
-55~+150
°C
ELECTRICAL CHARACTERISTICS
(Tamb=25°C , VDD=2.5V, fosc=3.579545MHz, unless otherwise specified)
Parameter
Symbo
l
Operating Voltage
VDD
Operating Current
IOP
Conditions
Min
2.0
5.5
Memory retension
1.0
5.5
Pulse, OFF-HOOK, Keypad
entry, no load
ON-HOOK No keypad
IS
Max
Tone/Pulse
Tone
Standby Current
Typ
entry ,no load VDD=1.0V
2
0.2
0.6
0.1
5
µA
0.1
µA
Imr
Control Pin Input Low Voltage
Vil
VSS
0.3VDD
Control Pin Input High Voltage
XMUTE Pin Leakage Current
Vih
0.7VDD
VDD
Imth
V XMUTE =12.0V
XMUTE Pin Sink Current
Imtl
V XMUTE =0.5V
HKS Pin Input Current
Ihks
Vhks=2.5V
Keyboard
Drive Current
Ikbd
Vn=0V note1
4
10
Scanning Pin
Sink Current
Ikbs
Vn=2.5 note1
200
400
Key-in Debounce Time
0.1
1
1
tDB
V
0.6
Memory Retension Current
Unit
mA
V
µA
mA
0.1
µA
30
µA
20
ms
Pulse Mode
1.0
µA
3.0
--
mA
10
--
--
20
--
--
40:60
--
--
33:66
--
Pulse Output Pin Leakage Current
Ipoh
Vpo=12V
--
--
Pulse Output Pin Sink Current
Ipol
Vpo=0.5V
1. 0
--
Pulse Rate
Make/Break Ratio
fpr
tM
t
B
pps
%
(to be continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
3
2001-11-02
Silan
Semiconductors SC9102C/D
(continued)
Parameter
Symbol
Pre-digit Pause
Pulse rate=10pps
Conditions
Min
Typ
Max
M/B ratio=40:60
--
40
--
M/B ratio=33:66
--
33
--
M/B ratio=40:60
--
20
--
M/B ratio =33:66
--
16.5
--
Pulse rate=10pps
--
800
--
Pulse rate=20pps
--
600
--
Vdc
VDD=2.0V~5.5V
0.45VDD
0.55VDD
0.7VDD
V
Itl
Vdtmf=0.5V
--
--
mA
tPDP
Pre-digit Pause
Pulse rate=20pps
tPDP
Inter-digit Pause
tIDP
Unit
ms
ms
ms
Tone Mode
DC Level
Tone
Sink Current
Vdtmf
0.15
Row group RL=10KΩ
120
150
180
mVrms
Load Resistor
R1
Dist.<=-23dB
10
--
--
KΩ
Pre-emphasis
twist
VDD=2.0~5.5 V
1
2
3
dB
Distortion(note 2)
Dist.
RL=10KΩ
--
-30
-23
dB
Minimum tone duration Time
tTD
Auto redial
--
100
--
ms
Minimum Intertone Pause Time
tTTP
Auto redial
--
106
--
ms
Output Pin
AC level
DTMF Signal
Note: 1. Vn: Input voltage of any keyboard scanning pin (Row group, Column group)
2 Distortion (dB) = 20log{[V12+V22+V32+…Vn2)1/2]/[(VL2+VH2)1/2]}
VL,VH: Row group and Column group signal
V1 V2…
Vn: Harmonic signal (BW = 300Hz~3500Hz
ACTUAL FREQUENCY OUTPUT (fosc=3.579545MHz)
Keyboard Scanning Pin
Standard(Hz)
Output
Deviation(%)
R1
f1
697
699
+0.28
R2
f2
770
766
-0.52
R3
f3
852
848
-0.47
R4
f4
941
948
+0.74
C1
f5
1209
1216
+0.57
C2
f6
1336
1332
-0.30
C3
f7
1477
1472
-0.34
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
4
2001-11-02
Silan
Semiconductors SC9102C/D
PIN DESCRIPTION
Pin No.
Pin Name
Description
15
C1
*Provides keyboard scanning.
* HKS pin is LOW, the column group stays in “HIGH” and row group stays in “LOW”
16
C2
*The keypad is compatible with the standard dual contact matrix keyboard (as
state.
figure1b), the inexpensive single contact keyboard (as figure 1a), and electronic input
(as figure 1c).
*When HKS is “LOW”, a valid key entry is defined by related Row & Column
17
C3
connection or by electronic input.
*Activation of two or more keys will result in no response, except for single key.
*To avoid keyboard-bouncing error, this chip provides built-in debounce circuit. (The
18
C4
1
R1
debounce time = 20ms)
Row
Column
Column
Figure1a: Single contact form
keyboard configuration
2
Figure1b: Dual contact form
keyboard configuration
R2
VDD
Row
3
Row
VSS
R3
Column
VDD
VSS
4
R4
8
OSCI
Figure1c: Electronic signal input keyboard configuration
*Oscillator input & output pins.
*The 3.579545MHz oscillator is formed by a built-in inverter inside of this chip and by
connecting a 3.579545MHz crystal or a ceramic resonator across the OSCI and
9
OSCO
OSCO pins. (built-in feedback resistor and capacitor)
*When HKS is “LOW”, a valid key-in may turn on this oscillator and generates a
3.579545 MHz clock.
(to be continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
5
2001-11-02
Silan
Semiconductors SC9102C/D
(continued)
Pin No.
Pin Name
Description
*Mute output pins.
*NMOS open drain output structure.
13
XMUTE
*The output is in “LOW” state during dialing sequence (both Pulse and Tone mode)
otherwise this pin is “high-impedance”.
*Long (continue) Mute.
11
VSS
*Negative power supply pin.
10
VDD
*Positive power supply pin.
*Hook switch input pin.
*When the handset is in ON-HOOK state, this pin must be pulled “high” in order to
5
HKS
disable the dialing operation and decrease the power consumption.
*When in OFF-HOOK state, the HKS pin must be pulled “low” state for all function
operation.
*Pulse output signal pin.
14
PO
*NMOS open drain output structure.
*The output is “LOW” during pulse dialing and Flash operation, otherwise this output
is “floating”.
*Dual Tone Multi-frequency output pin.
*In TONE mode, when an entry of digit key (include *, # key), this pin will send out a
12
TONE
corresponding DTMF signal.
*The TONE pin provides minimum tone duration and minimum intertone pause time
to support rapid key-in. If key-in time is less than 100ms, DTMF signal will last for
100ms; otherwise the tone duration will last as long as the key is pressed.
MODE
Dialing mode
*Three-state input structure.
VDD
Pulse mode
*This pin can select the three
Open
Pulse mode
VSS
Tone mode
*Mode selection pin.
7
MODE
modes shown on the right.
6
M/B
*M/B ration selection pin. (The function seeing the Dialing signal option table)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
6
2001-11-02
Silan
Semiconductors SC9102C/D
KEYBOARD OPERATION
Symbol definitions:
a)
↑
b)
↓
:
OFF-HOOK or enable Hand Free function.
:
ON-HOOK or disable Hand Free function.
c)
:
Input level from low to high.
d)
:
Input level from high to low.
g)
Dt1~Dtn
:
1, 2, 3, 4, 5, 6, 7, 8, 9, 0, *, #, (Cp1~Cpn is same as Dp1~Dpn).
Tone digit1, 2, 3, 4, 5, 6, 7, 8, 9, 0, *, #, (Ct1~Ctn is same as Dt1~Dtn).
h)
tF
:
Flash time.
i)
tP
:
Pause time.
j)
tPT
:
Pulse to Tone wait time.
k)
tFP
:
Pause time for flash.
l)
tRP
:
Pause time for redial.
m)
LNB
:
Last number redial buffer.
e)
D1~Dn
:
Digit key 1, 2, 3, 4, 5, 6, 7, 8, 9, 0, *, #, (C1~Cn is same as D1~Dn).
f)
Dp1~Dpn
:
Pulse digit
A Normal Dialing
1. Digit Dialing
Procedure
Dial out
Dial out
LNB
↑ D1, D2…, Dn ↓
Dt1, Dt2…, Dtn (in Tone mode)
Dp1, Dp2,…, Dpn (in Pulse mode)
D1, D2…, Dn
2. Dialing with flash key
Procedure
Dial out
Dial out
LNB
↑ F, D1, D2…, Dn ↓
tF, tFP, Dt1, Dt2…, Dtn (in Tone mode)
tF, tFP, Dp1, Dp2, …, Dpn (in Pulse mode)
D1, D2…, Dn
3. Dialing with P→T key
Procedure
Dial out
LNB
↑ D1, D2 …, P→T , …, Dn ↓
Dp1, Dp2, …, tPT, …, Dpn (in Pulse mode)
D1, D2 …, P→T , …, Dn
Note: If key in digit over maximum digit stored in LNB, then RD is inhibit even after on/off hook.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
7
2001-11-02
Silan
Semiconductors SC9102C/D
B Mixed dialing
Procedure
Dial out
LNB
↑D1, D2…, P→T , D9, D10 …, Dn↓
Dp1, Dp2, …, tPT, Dt9, Dt10…, Dtn
D1, D2…, P→T , D9, D10 …, Dn
C Redial
LNB
Procedure
Dial out
Dial out
D1, D2…, Dn
↑ RD ↓
tRP, Dt1, Dt2…, Dtn (in Tone mode)
tRP, Dp1, Dp2,…, Dpn (in Pulse mode)
Note: If key in digit over maximum digit stored in LNB, then RD is inhibit.
D Pause Function
Procedure
Dial out
Dial out
LNB
↑ D1, D2…, Dn, P, C1 …, Cn ↓
Dt1, Dt2 ,…, Dtn , tP, Ct1 …, Ctn (in Tone mode)
Dp1, Dp2, …, Dpn , tP, Cp1 …, Cpn (in Pulse mode)
D1, D2…, Dn, P , C1, C2 …, Cn
E Flash Function
Procedure
Dial out
Dial out
LNB
↑ D1, D2…, Dn, F, C1 …, Cn ↓
Dt1, Dt2,…, Dtn , t F, tFP, Ct1 …, Ctn (in Tone mode)
Dp1, Dp2,…, Dpn , tF, tFP, Cp1 …, Cpn (in Pulse mode)
C1, C2 …, Cn
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
8
2001-11-02
Silan
Semiconductors SC9102C/D
TEST CIRCUIT
1
Operation
current
V+
Standby
current
2
A
DP
DP
DT
VDD
keyboard
MODE
HKS
VSS
V+
A
VDD
VSS
3 Tone output voltage
4
Tone distortion
V+
V+
counter
and
AC meter
VDD
keyboard
keyboard
HKS
TONE
VSS
10KΩ
6
Pulse output sink current
(open drain structure)
HKS
V
10KΩ
Pulse output sink current
(inverter structure)
V+
V+
VDD
Flash
key
Spectrum
analyzer
VDD
TONE
VSS
5
HKS
VSS
HKS
VDD
A
PO
V
VEXT
HKS
PO
VSS
7 Keypad input current (row group)
VDD
V
VEXT
8 keypad input current (column group)
V+
A
A
V+
VDD
R*
R*
COLUMN
ROW
C*
A
HKS VSS MODE
C*
HKS VSS MODE
Note: 1. Dist. (dB)=20log{[V12+V22+V32+…Vn2)1/2]/[(VL2+VH2)1/2]}
a. V1…Vn are extraneous frequencies (ie, inter modulation and harmonic), components in the 500Hz to 3400Hz band.
b. VL,VH are the individual frequency components of DTMF signal.
c. Whether keyboard is pushed refer to the TONE mode time diagram.
2. Sink current Isink=I/(1-Duty Cycle), I is the net DC current measured from ampere meter.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
9
2001-11-02
Silan
Semiconductors SC9102C/D
3. R*, C* mean other column and row.
TIMING DIAGRAMS
HKS
3
2
3
KEY IN
tDB
XMUTE
PO
TONE
tTD
tITP
tITP
tITP
OSCO
......High impedance
Normal dialing
Tone Mode Timming Diagram
HKS
3
2
3
KEY IN
tDB
XMUTE
tPDP
tM
tB
PO
TONE
tTD
tIDP
tIDP
tIDP
OSCO
Normal dialing
......High impedance
Pusle Mode Timming Diagram
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
10
2001-11-02
Silan
Semiconductors SC9102C/D
TIMING DIAGRAMS (continued)
HKS
3
2
3
P→T
KEY IN
tDB
XMUTE
tPDP
PO
TONE
tTD
tITP
tPT
tITP
tITP
OSCO
......High impedance
Timming Waveform for mixed dialing Operation
(by */T key entry)
HKS
3
2
3
KEY IN
MODE
tDB
XMUTE
tPDP
PO
tIDP
tIDP
tIDP
TONE
OSCO
......High impedance
Timming Waveform for mixed dialing Operation
(by MODE pin entry)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
11
2001-11-02
Silan
Semiconductors SC9102C/D
TIMING DIAGRAMS(continued)
HKS
3
2
RD
KEY IN
tDB
XMUTE
tRP
PO
tITP
tITP
tITP
tITP
TONE
tTD
OSCO
......High impedance
Tone Mode Redial Timming Diagram
HKS
3
2
RD
KEY IN
tDB
XMUTE
tRP
tIDP
tIDP
PO
tIDP
tIDP
TONE
OSCO
......High impedance
Pulse Mode Redial Timming Diagram
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
12
2001-11-02
Silan
Semiconductors SC9102C/D
TIMING DIAGRAMS(continued)
HKS
KEY IN
3
2
P
3
tDB
XMUTE
tPDP
tIDP
tIDP
tP
tIDP
PO
TONE
OSCO
tDB
XMUTE
PO
tITP
tITP
tP
tITP
TONE
OSCO
......High impendance
Pause key operating timming
HKS
KEY IN
3
tDB
XMUTE
PO
TONE
tF
tFP
OSCO
......High impedance
Flash key operating timming
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
13
2001-11-02
Silan
Semiconductors SC9102C/D
TYPACAL APPLICATION CIRCUIT
22MΩ
ON/OFF
HOOK
100kΩ
A92
ZNR
120V
1N4148x2
100kΩ
Ring
2.2kΩ
100kΩ
Tip
3.3kΩ
1N4148x4
5V
1
2
3
P→T
1 R1
4
5
6
F
2 R2
7
8
9
P
3 R3
*/P
0
2-4
Speech
network
C945
1µF
100µF
A42
220kΩ
VDD
220kΩ
100kΩ
14
10
5
PO
VDD
HKS
TONE 12
1.5kΩ
C945
0.02µF
#/RD RD
SC9102C/D
OSCO 9
4 R4
C4 C3 C2 C1 VSS MODE
18
200Ω
OSCI 8
17
16
15
11
M/B
7
3.579545MHz
XMUTE 13
6
VDD
VDD
DP
DP
DT
33.3/66.6 10pps
33.3/66.6 20pps
40/60
10pps
1000pF
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
14
2001-11-02
Silan
Semiconductors SC9102C/D
CHIP TOPOGRAPHY
17
16
15
14
13
12
18
11
1
10
2
9
3
8
4
6
5
Chip size: 1.35 x 1.33 mm
7
2
PAD COORDINATES (Unit: µm)
Pad No.
Symbol
X
Y
Pad No.
Symbol
X
Y
1
2
3
4
5
6
7
8
9
P1
P2
P3
P4
P5
P6
P7
P8
P9
-545.0
-545.0
-539.0
539.0
21.2
191.0
362.5
529.5
540.5
276.0
109.0
-266.0
-453.5
-528.0
-528.0
-381.5
8.5
176.4
10
11
12
13
14
15
16
17
18
P10
P11
P12
P13
P14
P15
P16
P17
P18
542.2
541.3
541.0
324.3
131.0
-27.0
-199.5
-373.0
-545.0
176.4
349.5
530.5
531.5
533.0
531.5
531.5
531.5
463.5
Note: The original point of the coordinate is the die center.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
15
2001-11-02
Silan
Semiconductors SC9102C/D
PACKAGE OUTLINE
DIP-18-300-2.54
UNIT: mm
0.05
2.54
0.25
0.25
B
6.40
7.62
B
1.52 +0.3
-0
B0.3
15 Degree
4.36MAX
23.12
3.00MIN
0.5MIN
B0.08
0.46
1.27MAX
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
16
2001-11-02