CXB1558Q-Y Laser Driver Description The CXB1558Q-Y is a high-speed monolithic Laser Driver/Current Switch with ECL input level. Open collector outputs are provided at the output pins (Q, Q) and have the capability of driving modulation current of 60mApp at a max. data rate of 2.0Gbps (NRZ). DRIVADJ and SDRIV inputs control the modulation current amplitude, and BIASADJ, SBIAS inputs control the bias current. Modulation and bias current can be controlled by either voltage or current through these pins. This device includes D-FF for duty cycle correction and Laser Shutdown function. 32 pin QFP (Ceramic) Features • Maximum data rate (NRZ): 2.0Gbps (Typ.) • Differential Data input: ECL • D-FF for Duty Cycle Correction • Laser Shutdown Input: TTL Applications • SONET/SDH: 155,622Mb/s,1.2Gb/s • Fiber channel: 133,266,532Mb/s,1.062Gb/s • FDDI: 125Mb/s ESCON: 200Mb/s HDTV: 1.5Gb/s Absolute Maximum Ratings • Supply voltage • Input voltage • Differential input voltage • Differential clock voltage • Output current (Continuous) Input current (Continuous) • Storage temperature Vcc – VEE –0.3 to +7.0 VIN VEE to +0.5 |VIN – VIN| 0 to 2.5 |VCLK – VCLK| 0 to 2.5 IQ, IBIAS 0 to 80 IDRVADJ 0 to 8 IBIASADJ 0 to 8 Tstg –65 to +150 Recommended Operating Conditions • DC power supply voltage Vcc – VEE • Operating case temperature Tc 4.75 to 5.46 0 to +85 V V V V mA mA mA °C V °C Structure Bipolar silicon monolithic IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94720-PK CXB1558Q-Y VEE1 25 VCC2 LDOFF NC CLK CLK VEE NC NC Block Diagram and Pin Assignment 24 23 22 21 20 19 18 17 16 NC VOLTAGE SOURCE VBB 26 15 NC D 27 14 NC D-FF D 28 13 NC INPUT SIGNAL MONITOR VCC1 29 12 NC 11 BIASADJ P 30 MODULATION GENERATOR P 31 BIAS GENERATOR 10 VEE2 9 SBIAS VEE2 Q Q 5 6 7 8 BIASA 4 BIASB 3 Q 2 Q 1 SDRIV DRIVADJ 32 Truth table LDOFF D Q P H L H H H H L L L L H H L H H L ∗ In a case of resistor load. –2– CXB1558Q-Y Pin Description Pin No. 1 32 Symbol SDRIV DRIVADJ 2, 10 VEE2 Typical voltage (V) DC 0mA to 8mA∗1 Equivalent circuit AC — 3 0mA to 6mA∗2 VCC 1 4 0mA to 40mA∗2 32 5 0mA to 60mA∗1 2 — — 6 10 VEE 0mA to 40mA∗2 8 BIASB 0mA to 30mA 8 Modulation generator current adjustment. Modulation generator current output. 7 7 Modulation generator current monitor. Negative power supply pin. –5.2V 0mA to 60mA∗1 Q 6 5 VEE to VEE +2.5V 3 Q 4 Description — Bias generator current output. VCC BIASA 9 9 11 SBIAS BIASADJ 0mA to 8mA — VEE to VEE +2.5V — 11 2 Bias generator current adjustment. VEE 10 Bias generator current monitor. VCC 29 20 CLK 200Ω 21 — 21 –1.84V to –0.81V CLK 19 19 Clock signal input. 200Ω 20 VEE –5.2V VEE — ∗1 VEE = –5.46V to –4.94V ∗2 VEE = –4.94V to –4.75V –3– CXB1558Q-Y Pin No. Symbol Typical voltage (V) DC Equivalent circuit AC Description VCC Reference voltage (–1.3V) Use for the reference voltage in the case of single-phase input. Max. drive current ±200µA 900Ω 26 VBB –1.3V — 26 500µ VEE 25 VEE1 27 D –5.2V — VCC 29 Negative power supply pin. 200Ω 27 — 28 D 29 VCC1 0V –1.84V to –0.81V 28 — 25 VEE 30 30 P — Data signal input. 200Ω 200Ω 31 200Ω Input signal monitor output. 0mA to 2.7mA 31 P Positive power supply pin. — 1.7mA VEE –4– CXB1558Q-Y Electrical Characteristics • DC Electrical Characteristics Item Power supply current (VCC1 = VCC2 = GND, VEE1 = VEE2 = –5.46 to –4.75V, Tc = 0 to +85°C) Symbol IEE Condition Min. Typ. Max. Unit IQ = 0mA, IBIAS = 0mA –110 –78 — IQ = 60mA, IBIAS = 60mA –260 –213 — VEE = –5.46 to –4.94V 60 — — VEE = –4.94 to –4.75V 40 — — –2.5 — 2.0 V 60 — — mA –2.7 — 0.0 mA Max. Modulation current IQ Modulation output voltage range VQ Tc = 25°C Max. Bias current IBIAS IBIASA + IBIASB Bias output voltage range VBIAS Modulation current monitor output voltage range VSQ at voltage control application –2.7 — 0.0 Bias current monitor output voltage range VSBIAS at voltage control application –2.7 — 0.0 Input signal monitor current IP 1 1.7 2.7 Input signal monitor output voltage range VP –2.5 — 2.0 ECL Input High voltage VEDH –1.17 — –0.81 ECL Input Low voltage VEDL –1.84 — –1.48 ECL Input High current IEDH — — 20 TTL Input High voltage VTDH VEE + 2.0 — Vcc TTL Input Low voltage VTDL VEE – 0.5 — VEE + 0.8 TTL Input High current ITDH — — 10 TTL Input Low current ITDL –320 — — Reference bias voltage VBB –1.38 –1.32 –1.26 Min. Typ. Max. Tc = 25°C V mA V µA V µA V Ratio of current setup Item Symbol Condition Modulation current vs. Modulation monitor current S1 at voltage control application 9.0 11.4 12.0 Modulation current vs. Modulation control current S2 at current control application 6.5 8.6 10.5 Bias current vs. Bias monitor current S3 at voltage control application 11.0 12.0 13.0 Bias current vs. Bias control current S4 at current control application 7.4 9.8 12.0 –5– CXB1558Q-Y • AC Electrical Characteristics (VCC1 = VCC2 = GND, VEE1 = VEE2 = –5.46 to –4.75V, Tc = 0 to +85°C, Rl = 25Ω to GND) Item Symbol Condition NRZ Min. Typ. Max. Unit 1.6 2.0 — Gbps GHz Max. Data rate fDMAX Max. FF Operating Frequency fFMAX 1.6 2.0 — Set Up Time Ts 150 — — Hold Time TH 10 — — Shut Down Time TSHUT — — 30 Rise time TTLH — 170 — Fall time TTHL — 150 — 20 to 80% IQ = 60mA, IBIAS = 0 Application Circuit Current Control Application VCLK VEE1 VEE = –5.2V 0.01µF 25 ECL Level Single Input VEE CLK 21 22 19 20 NC VEE = –5.2V NC 23 24 0.01µF NC VCC2 LDOFF TTL Level Input L : Shut down Open High CLK VSHUT 18 17 16 NC VOLTAGE SOURCE VBB D ECL Level Single Input D VIN 26 15 NC 27 14 NC D-FF 13 NC 28 INPUT SIGNAL MONITOR VCC1 29 12 NC BIASADJ P 11 30 200Ω P MODULATION GENERATOR 31 VEE = –5.2V BIAS GENERATOR 10 IP VEE2 SBIAS DRIVADJ 9 32 IBIAS : IBIASADJ ≈ 10 : 1 0.1µH IBIAS IQ IQ : IDRVADJ ≈ 9 : 1 VEE = –5.2V Laser Diode –6– BIASB Q Q Q 5.1Ω IDRIVADJ IBIASADJ 8 7 BIASA 6 5 4 3 VEE2 SDRIV 2 Q 1 ps µs ps CXB1558Q-Y Measurement Circuit (DC) CLKin VEE = –5.2V VEE1 25 VEE CLK 19 20 NC 21 22 NC 23 24 CLK 0.01µF VEE = –5.2V NC VCC2 LDOFF VSHUT 18 17 16 NC VOLTAGE SOURCE 0.01µF VBB 26 14 NC D-FF 28 13 NC INPUT SIGNAL MONITOR VCC1 29 10 BIASADJ VEE = –5.2V VEE2 SBIAS 9 32 2 SDRIV 6 5 4 3 8 7 BIASA 1 BIASB DRIVADJ BIAS GENERATOR MODULATION GENERATOR 31 Q IP P Q 200Ω 11 30 VEE2 P 12 NC Q D VIN 27 Q D 15 NC IBIASADJ A IQB IDRVADJ A IQ A IBIAS VEE = –5.2V CLKin VEE1 0.01µF 25 22 21 VEE CLK 19 20 NC 23 NC 24 VEE = –5.2V CLK 0.01µF VEE = –5.2V NC VCC2 LDOFF VSHUT 18 17 16 NC VOLTAGE SOURCE VBB 26 D D VIN 15 NC 27 14 NC D-FF 13 NC 28 INPUT SIGNAL MONITOR VCC1 29 12 NC P 11 30 200Ω IP P DRIVADJ BIAS GENERATOR MODULATION GENERATOR 31 10 BIASADJ 510Ω VEE2 VBIAS SBIAS 9 32 510Ω BIASB Q Q Q 8 7 BIASA 6 5 4 3 VEE2 SDRIV 2 Q 1 VMOD A IQM A A IQB VEE = –5.2V –7– A IQ A IBIAS VEE = –5.2V IBM CXB1558Q-Y Measurement Circuit (AC) CLKin 25 NC D-FF 13 NC 28 INPUT SIGNAL MONITOR 12 NC BIASADJ 11 30 MODULATION GENERATOR 31 BIAS GENERATOR 10 9 32 1 2 6 5 4 3 51Ω VEE = –5.2V VEE2 SBIAS 8 7 BIASA DRIVADJ VEE 14 NC BIASB IP P CLK 27 29 200Ω CLK 15 NC VCC1 P 17 26 Q D VIN 18 16 NC Q D 19 20 Q VBB 21 VOLTAGE SOURCE Q 0.01µF 22 VEE2 VEE1 SDRIV VEE = –5.2V 23 24 NC 0.01µF VEE = –5.2V NC VCC2 LDOFF VSHUT 51Ω IDRVADJ VEE = –5.2V Digitizing oscilloscope Q Monitor Coaxial cable QB Monitor 50Ω –8– 50Ω CXB1558Q-Y Voltage Control Application VCLK VEE1 VEE = –5.2V 0.01µF VIN 25 21 VEE 19 20 NC 22 NC CLK VEE = –5.2V 18 17 VOLTAGE SOURCE 16 NC VBB D ECL Level Single Input 23 24 0.01µF ECL Level Single Input NC VCC2 LDOFF TTL Level Single Input L: Shut down Open High CLK VSHUT D 26 15 NC 27 14 NC D-FF 28 13 NC INPUT SIGNAL MONITOR VCC1 29 12 NC 11 30 200Ω P BIAS GENERATOR MODULATION GENERATOR 31 10 IP 510Ω VEE2 SBIAS VEE = –5.2V 9 32 DRIVADJ 510Ω BIASB Q Q A 8 7 BIASA 6 5 4 3 Q SDRIV 2 Q 1 VEE2 VDRIVADJ VBIASADJ BIASADJ P IBIASMONITOR IQMONITOR 5.1Ω A IQ : IQMONITOR ≈ 11 : 1 VEE = –5.2V IBIAS : IBIASMONITOR ≈ 12 : 1 0.1µH IBIAS IQ Laser Diode Cautions for Handling 1. The outputs (Q, Q, BIASA, BIASB, SDRIV, SBIAS, P and P) on this IC are the open collector type. Therefore, when these pins are not bing used, connect them to Vcc. 2. When the inputs (DRIVEADJ and BIASADJ) are not bing used, connect them to VEE. 3. Do not apply voltage over VEE + 2.5V to DRIVADJ pin and BIASADJ pin. 4. In voltage control Application, do not apply voltage over the output voltage range to SDRIV pin and SBIAS pin. (see DC Characteristics of Laser Part and Voltage Control Application Circuit.) 5. Maximum drive current of VBB pin is ±200µA. 6. Maximum input differential voltage is 2.5V. ( | D – D | , | CLK – CLK | ) 7. As the electronic breakdown level is weak, take care to handle. –9– CXB1558Q-Y Example of Representative Characteristics Bias current vs. Bias control current Modulation current vs. Modulation control current 100 80 IBIAS – Bias current (mA) IQ – Modulation current (mA) 100 60 40 20 0 0 2 4 6 8 80 60 40 20 0 10 0 4 6 8 10 Bias current vs. Bias control voltage Modulation current vs. Modulation control voltage 100 100 80 80 IBIAS – Bias current (mA) IQ – Modulation current (mA) 2 IBIASADJ – Bias control current (mA) IBIAS : IBIASADJ ≈ 10 : 1 IDRIVADJ – Modulation control current (mA) IQ : IDRIVADJ ≈ 9 : 1 60 40 20 0 60 40 20 0 0 0.5 1 1.5 2 0 VDRVADJ – Modulation control voltage (V) IQ ≈ 0.1 × ( Vmod – 0.8 ) [A] 0.5 1 1.5 VBIAS – Bias control voltage [V] IBIAS ≈ 0.11 × ( VBIAS – 0.8 ) [A] – 10 – 2 CXB1558Q-Y Package Outline Unit: mm 32PIN QFP (CERAMIC) 14.73 ± 0.3 4.92 MAX 0.15 ± 0 .05 17 24 16 32 9 10.63 MAX 25 1 0.76 0.48 ± 0.1 0° to 10° PACKAGE STRUCTURE PACKAGE MATERIAL CERAMIC TIN PLATING SONY CODE QFP-32C-L01 LEAD TREATMENT EIAJ CODE XQFP023-G-0000-A LEAD MATERIAL 42 ALLOY PACKAGE WEIGHT 0.3g JEDEC CODE – 11 – (0.825) 1.016 0.635 ± 0.125 8