SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK120 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage • High temperature soldering guaranteed: 1.0 (25.4) MIN. 250oC/10S/9.5mm lead length at 5 lbs tension .060 (1.5) .090 (2.3) DIA. .120 (3.0) .200 (5.1) MECHANICAL DATA 1.0 (25.4) MIN. • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Polarity: Color band denotes cathode • Mounting position: Any .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS SYMBOL VALUE UNITS Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA IFRM 400 mA VF 1 V 25 nA 5 µA IR2 50 µA Ct 4 pF Qr Rθ(ja) 57 Forward Current (average) Repetitive Forward Peak Current Forward Voltage (IF=10mA) Reverse Current (VR=20V) IR1 Reverse Current (VR=75V) o Reverse Current (VR=20V,TJ=100 C) Capacitance (note 1) Reverse Charge (IF=10mA) Thermal Resistance (junction to ambient, note 2) 0.35 TSTG,TJ Operating Junction and Storage Temperature Range -55 +175 Notes: 1. VR=0V, f=1 MHz 2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. pC o C/mW o C http://www.sse-diode.com