Preliminary Preliminary Product Description SGA-0163 Stanford Microdevices SGA-0163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.1V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4500 MHz, Silicon Germanium Cascadeable Gain Block This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 Ohm impedance, the SGA-0163 requires only DC blocking and bypass capacitors for external components. Product Features DC-4500 MHz Operation Single Voltage Supply Low Current Draw: 8mA at 2.1V typ. High Output Intercept: 10 dBm typ. at Small Signal Gain vs. Frequency 15 dB 10 1950MHz 5 Applications Oscillator Amplifiers Broadband Gain Blocks IF/RF Buffer Amplifiers 0 0 1 2 3 4 5 6 Frequency GHz Sy mbol Parameters: Test Conditions: Z0 = 50 Ohms, ID = 8 mA, T = 25ºC P1dB Output Pow er at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm -1.8 -1.8 -2.4 IP3 Third Order Intercept Point Pow er out per tone = -17 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 9.4 9.8 9.2 S21 Small Signal Gain f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 12.7 12.0 11.6 MHz 4500 BW3dB Units 3dB Bandw idth Min. Ty p. S11 Input VSWR f = DC - 4500MHz - 1.6:1 S22 Output VSWR f = DC - 4500MHz - 1.3:1 S12 Reverse Isolation f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 17.6 18.1 18.3 NF Noise Figure f = 1950 MHz dB 4.6 VD Device Voltage V 2.1 ºC/W 255 Rth, j-l Thermal Resistance (junction - lead) Max. The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Value Unit Supply Current 16 mA Device Voltage 6 V -40 to +85 ºC -4 dBm Operating Temperature Maximum Input Pow er Storage Temperature Range Operating Junction Temperature -40 to +150 ºC +150 ºC Key parameters, at typical operating frequencies: Parameter Ty pical 25ºC Test Condition Unit 100 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.9 9.4 -1.5 12.5 17.3 4.6 dB dBm dBm dB dB dB 500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.8 9.5 -1.5 12.7 17.4 4.6 dB dBm dBm dB dB dB 850 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.7 9.4 -1.8 12.8 17.6 4.7 dB dBm dBm dB dB dB 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.0 9.8 -1.8 12.4 18.1 4.6 dB dBm dBm dB dB dB 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 11.6 9.2 -2.5 12.1 18.3 dB dBm dBm dB dB 3500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 10.6 9.3 -2.7 11.8 18.5 dB dBm dBm dB dB 522 Almanor Ave., Sunnyvale, CA 94085 (ID = 8mA, unless otherwise noted) Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Tone spacing = 1 MHz, Pout per tone = -17dBm Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Pin # 1 Function Description GND Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. GND Same as Pin 1 2 3 RF IN 4 5 GND GND 6 RF OUT Device Schematic RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Same as Pin 1 Same as Pin 1 RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of this bias netw ork should be w ell bypassed. Application Schematic Recommended Bias Resistor Values Supply Voltage(Vs) 5V 7.5V 9V 12V Rbias (Ohms) 360 680 820 1.2K Cd1 Cd2 R bias Vs Note: A bias resistor is needed for stability over temperature. Lchoke 50 ohm microstrip 50 ohm microstrip 1,2 3 6 Cb1 Cb2 4,5 R eference D esignator Function 500 MH z 850 MH z 1950 MH z 2400 MH z C b1 D C Blocki ng 220 pF 100 pF 68 pF 56 pF C b2 D C Blocki ng 220 pF 100 pF 68 pF 56 pF C d1 D ecoupli ng 1 uF 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier S21 vs. Temperature, ID = 8mA 20 25C -40C 85C 25C -40C 85C -10 dB 15 dB S12 vs. Temperature, ID = 8mA 0 10 -20 5 0 -30 0 1 2 3 4 5 6 0 1 2 GHz S11 vs. Temperature, ID = 8mA 0 4 5 6 S22 vs. Temperature, ID = 8mA 0 25C -40C 85C -5 25C -40C 85C -10 -10 dB dB 3 GHz -20 -15 -30 -20 -25 -40 0 1 2 3 4 5 6 0 1 2 GHz IP3 vs. Temperature, ID = 8mA 15 3 4 5 6 GHz P1dB vs. Temperature, ID = 8mA 0 10 dBm dBm -2 -4 -6 5 25C -40C 85C 0 0 25C -40C 85C -8 -10 1 2 3 4 0 GHz 522 Almanor Ave., Sunnyvale, CA 94085 1 2 3 4 GHz Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Caution: ESD sensitive Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 6 5 1 2 Reel Size Devices/Reel SGA-0163 7" 3000 4 Note: Pin 1 is on lower left when you can read package marking G45 Package Marking Part Number 3 Package Dimensions Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101494 Rev A