STANFORD SGA-0163

Preliminary
Preliminary
Product Description
SGA-0163
Stanford Microdevices’ SGA-0163 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 2.1V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with FT up to 50 GHz.
DC-4500 MHz, Silicon Germanium
Cascadeable Gain Block
This circuit uses a Darlington pair topology with resistive
feedback for broadband performance as well as stability over
its entire temperature range. Internally matched to 50 Ohm
impedance, the SGA-0163 requires only DC blocking and
bypass capacitors for external components.
Product Features
• DC-4500 MHz Operation
• Single Voltage Supply
• Low Current Draw: 8mA at 2.1V typ.
• High Output Intercept: 10 dBm typ. at
Small Signal Gain vs. Frequency
15
dB
10
1950MHz
5
Applications
• Oscillator Amplifiers
• Broadband Gain Blocks
• IF/RF Buffer Amplifiers
0
0
1
2
3
4
5
6
Frequency GHz
Sy mbol
Parameters: Test Conditions:
Z0 = 50 Ohms, ID = 8 mA, T = 25ºC
P1dB
Output Pow er at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
-1.8
-1.8
-2.4
IP3
Third Order Intercept Point
Pow er out per tone = -17 dBm
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
9.4
9.8
9.2
S21
Small Signal Gain
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dB
dB
dB
12.7
12.0
11.6
MHz
4500
BW3dB
Units
3dB Bandw idth
Min.
Ty p.
S11
Input VSWR
f = DC - 4500MHz
-
1.6:1
S22
Output VSWR
f = DC - 4500MHz
-
1.3:1
S12
Reverse Isolation
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dB
dB
dB
17.6
18.1
18.3
NF
Noise Figure
f = 1950 MHz
dB
4.6
VD
Device Voltage
V
2.1
ºC/W
255
Rth, j-l
Thermal Resistance (junction - lead)
Max.
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101494 Rev A
Preliminary
Preliminary
SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Parameter
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Value
Unit
Supply Current
16
mA
Device Voltage
6
V
-40 to +85
ºC
-4
dBm
Operating Temperature
Maximum Input Pow er
Storage Temperature Range
Operating Junction Temperature
-40 to +150
ºC
+150
ºC
Key parameters, at typical operating frequencies:
Parameter
Ty pical
25ºC
Test Condition
Unit
100 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
Noise Figure
12.9
9.4
-1.5
12.5
17.3
4.6
dB
dBm
dBm
dB
dB
dB
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
Noise Figure
12.8
9.5
-1.5
12.7
17.4
4.6
dB
dBm
dBm
dB
dB
dB
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
Noise Figure
12.7
9.4
-1.8
12.8
17.6
4.7
dB
dBm
dBm
dB
dB
dB
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
Noise Figure
12.0
9.8
-1.8
12.4
18.1
4.6
dB
dBm
dBm
dB
dB
dB
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
11.6
9.2
-2.5
12.1
18.3
dB
dBm
dBm
dB
dB
3500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
10.6
9.3
-2.7
11.8
18.5
dB
dBm
dBm
dB
dB
522 Almanor Ave., Sunnyvale, CA 94085
(ID = 8mA, unless otherwise noted)
Tone spacing = 1 MHz, Pout per tone = -17dBm
Zs = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = -17dBm
Zs = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = -17dBm
Zs = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = -17dBm
Zs = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = -17dBm
Tone spacing = 1 MHz, Pout per tone = -17dBm
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101494 Rev A
Preliminary
Preliminary
SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier
Pin #
1
Function
Description
GND
Connection to ground. For best
performance use via holes (as close to
ground leads as possible) to reduce lead
inductance.
GND
Same as Pin 1
2
3
RF IN
4
5
GND
GND
6
RF OUT
Device Schematic
RF input pin. This pin requires the use of an
external DC blocking capacitor chosen for
the frequency of operation.
Same as Pin 1
Same as Pin 1
RF output and bias pin. Bias should be
supplied to this pin through an external
series resistor and RF choke inductor.
Because DC biasing is present on this pin, a
DC blocking capacitor should be used in
most applications (see application
schematic). The supply side of this bias
netw ork should be w ell bypassed.
Application Schematic
Recommended Bias Resistor Values
Supply
Voltage(Vs)
5V
7.5V
9V
12V
Rbias (Ohms)
360
680
820
1.2K
Cd1
Cd2
R bias
Vs
Note: A bias resistor is needed for stability
over temperature.
Lchoke
50 ohm
microstrip
50 ohm
microstrip
1,2
3
6
Cb1
Cb2
4,5
R eference
D esignator
Function
500 MH z
850 MH z
1950 MH z
2400 MH z
C b1
D C Blocki ng
220 pF
100 pF
68 pF
56 pF
C b2
D C Blocki ng
220 pF
100 pF
68 pF
56 pF
C d1
D ecoupli ng
1 uF
1 uF
1 uF
1 uF
C d2
D ecoupli ng
100 pF
68 pF
22 pF
22 pF
Lchoke
AC Blocki ng
68 nH
33 nH
22 nH
18 nH
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101494 Rev A
Preliminary
Preliminary
SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier
S21 vs. Temperature, ID = 8mA
20
25C
-40C
85C
25C
-40C
85C
-10
dB
15
dB
S12 vs. Temperature, ID = 8mA
0
10
-20
5
0
-30
0
1
2
3
4
5
6
0
1
2
GHz
S11 vs. Temperature, ID = 8mA
0
4
5
6
S22 vs. Temperature, ID = 8mA
0
25C
-40C
85C
-5
25C
-40C
85C
-10
-10
dB
dB
3
GHz
-20
-15
-30
-20
-25
-40
0
1
2
3
4
5
6
0
1
2
GHz
IP3 vs. Temperature, ID = 8mA
15
3
4
5
6
GHz
P1dB vs. Temperature, ID = 8mA
0
10
dBm
dBm
-2
-4
-6
5
25C
-40C
85C
0
0
25C
-40C
85C
-8
-10
1
2
3
4
0
GHz
522 Almanor Ave., Sunnyvale, CA 94085
1
2
3
4
GHz
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101494 Rev A
Preliminary
Preliminary
SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier
Caution: ESD sensitive
Part Number Ordering Information
Appropriate precautions in handling, packaging and
testing devices must be observed.
6
5
1
2
Reel Size
Devices/Reel
SGA-0163
7"
3000
4
Note: Pin 1 is on lower left when you can
read package marking
G45
Package Marking
Part Number
3
Package Dimensions
Pad Layout
0.026
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.075
0.035
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.016
0.425 (0.017)
TYP.
0.10 (0.004)
0.00 (0.00)
1.00 (0.039)
0.80 (0.031)
0.20 (0.0080
0.10 (0.004)
0.30 REF.
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.0040
DIMENSIONS ARE IN INCHES [MM]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101494 Rev A