DN3135 DN3135 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-236AB** TO-243AA* Die*** 350V 35Ω 180mA DN3135K1 DN3135N8 DN3135NW Same as SOT-89. Products shipped on 2000 piece carrier tape reels. ** Same as SOT-23. Products skipped on 3000 piece carreir tape reels. *** Die in wafer form. Product marking for TO-243AA: Product marking for SOT-23: DN1S* Features N1S* Where *= 2-week alpha date code Where *= 2-week alpha date code ❏ High input impedance ❏ Low input capacitance Advanced DMOS Technology ❏ Fast switching speeds ❏ Low on resistance These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Free from secondary breakdown ❏ Low input and output leakage Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Normally-on switches ❏ Solid state relays ❏ Converters ❏ Linear amplifiers ❏ Constant current sources Package Options ❏ Power supply circuits ❏ Telecom Drain Absolute Maximum Ratings D Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* G Gate Source TO-236AB (SOT-23) top view -55°C to +150°C D S TO-243AA (SOT-89) 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 10/23/00 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 DN3135 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25°C θjc θja °C/W °C/W IDR* IDRM TO-236AB 72mA 300mA 0.36W 200 350 72mA 300mA TO-243AA 135mA 300mA 1.3W † 34 97† 135mA 300mA * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Souce Breakdown Voltage 350 VGS(OFF) Gate-to-Source OFF Voltage -1.5 ∆VGS(OFF) Typ Max Unit Conditions V VGS = -5.0V, ID = 100µA -3.5 V VDS = 15V, ID = 10µA Change in VGS(OFF) with Temperature 4.5 mV/°C VDS = 15V, ID = 10µA IGSS Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 1.0 µA VGS = -5.0V, VDS = Max Rating 1.0 mA VGS = -5.0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 15V IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source ON-State Resistance 180 35 35 1.1 Ω %/°C VGS = 0V, ID = 150mA VGS = -0.8V, ID = 50mA ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 60 120 COSS Common Source Output Capacitance 6.0 15 CRSS Reverse Transfer Capacitance 3.0 10 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 RGEN = 25Ω, tf Fall Time 20 VGS = 0V to -10V VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time Ω 140 mm 800 pF VGS = 0V, ID = 150mA ID = 100mA, VDS=10V VGS = -5.0V, VDS = 25V, f =1.0Mhz VDD = 25V, ns ID = 150mA, V VGS = -5.0V, ISD = 150mA ns VGS = -5.0V, ISD = 150mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 10/23/00 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com