TN5335 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) TO-236AB TO-243AA* Wafer 350V 15Ω 2.0V 750mA TN5335K1 TN5335N8 TN5335NW * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Features Product marking for SOT-23 Product marking for TO-243AA N3S❋ TN3S❋ Where ❋ = 2-week alpha date code Where ❋ = 2-week alpha date code ❏ Low threshold – 2.0V max. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance Low Threshold DMOS Technology ❏ Free from secondary breakdown These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. ❏ Low input and output leakage Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers Package Options ❏ Telecom switches ❏ Modem hook switches D D Absolute Maximum Ratings G G S Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-236AB (SOT-23) D S TO-243AA (SOT-89) top view -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN5335 Thermal Characteristics Package ID (continuous)* TO-236AB ID (pulsed) 110mA TO-243AA Power Dissipation @ TA = 25°C 800mA 0.36W 1.3A 1.6W† 230mA IDR* IDRM θjc θja °C/W °C/W 200 350 110mA 800mA 15 78† 230mA 1.3A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 350 0.6 ON-State Drain Current ID(ON) Typ Max 2.0 -4.5 100 1.0 10 µA VGS = 0V, VDS = Max Rating mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 5.0 nA VGS = 0V, VDS = 330V VGS = 4.5V, VDS = 25V 300 mA Static Drain-to Source On-State Resistance Conditions VGS = 0V, ID = 100µA VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = 100V 1.0 750 RDS(ON) Unit V V mV/°C nA µA 15 15 VGS = 3.0V, ID = 20mA Ω 15 ∆RDS(ON) GFS CISS Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance 1.0 COSS Common Source Output Capacitance 60 CRSS Reverse Transfer Capacitance 22 VGS = 4.5V, ID = 150mA VGS = 10V, ID = 200mA %/°C m Ω 125 VGS = 10V, VDS = 25V VGS = 4.5V, ID = 150mA VDS = 25V, ID = 200mA 110 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 800 pF VGS = 0V, VDS = 25V f = 1Mhz VDD = 25V, ID = 150mA, ns RGEN = 25Ω V VGS = 0V, ISD = 200mA ns VGS = 0V, ISD = 200mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com