Product Data Sheet 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration Unconditionally Stable 3.6068 x 1.9304 x 0.1016 mm (0.142 x 0.076 x 0.004 in.) Description The TriQuint TGA8014-SCC is a two-stage GaAs monolithic medium power amplifier. Reactively matched 914 um and 1219 um FETS provide 11 dB nominal gain with 16 percent typical power-added efficiency and output power at 1 dB gain compression of 0.5 watt. Ground is provided to the circuitry through vias to the backside metallization. The small size and inherent reliability advantages of a monolithic device over a hybrid design make this device attractive for use in a variety of military applications. Used in a balanced configuration, the TGA8014-SCC effectively addresses applications such as driver and power stages in EW amplifiers, local oscillator buffers, and TWT replacement amplifiers. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermcompression and thermosonic wirebonding processes. The TGA8014-SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGA8014-SCC TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGA8014-SCC TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGA8014-SCC TYPICAL S-PARAMETERS S 21 S 11 F R EQUENC Y S 12 S 22 ANG M AG ANG M AG 3.55 29 0.002 167 3.69 -34 0.005 150 GAIN (GHz) M AG ANG M AG ANG (dB) 6.0 0.55 176 6.5 0.58 173 0.36 4 11.0 0.41 -35 11.3 7.0 0.66 168 3.73 -80 0.006 135 0.48 -73 11.4 7.5 0.73 160 3.98 -120 0.008 119 0.55 -105 12.0 8.0 0.77 150 4.25 -159 0.010 96 0.58 -135 12.6 8.5 0.79 142 4.36 163 0.010 77 0.57 -160 12.8 9.0 0.79 134 4.31 127 0.009 54 0.52 179 12.7 9.5 0.79 127 4.09 93 0.008 33 0.45 164 12.2 10.0 0.80 120 3.81 62 0.006 10 0.40 153 11.6 10.5 0.81 113 3.55 33 0.005 -10 0.38 143 11.0 11.0 0.82 105 3.39 8 0.004 -42 0.36 131 10.6 11.5 0.84 97 3.32 -18 0.004 -82 0.36 119 10.4 12.0 0.85 87 3.32 -42 0.004 -122 0.36 105 10.4 12.5 0.87 77 3.40 -68 0.005 -133 0.37 87 10.6 13.0 0.86 66 3.49 -94 0.006 -152 0.37 70 10.8 13.5 0.85 54 3.70 -121 0.010 180 0.40 52 11.4 14.0 0.82 40 3.89 -151 0.011 155 0.42 30 11.8 14.5 0.76 27 3.92 178 0.012 136 0.42 8 11.9 15.0 0.68 14 3.78 146 0.014 111 0.38 -13 11.6 15.5 0.60 6 3.59 118 0.014 78 0.31 -27 11.1 16.0 0.55 -4 3.43 89 0.015 39 0.28 -37 10.7 16.5 0.52 -16 3.32 59 0.010 -8 0.27 -51 10.4 17.0 0.47 -26 3.28 32 0.009 -4 0.23 -68 10.3 17.5 0.47 -43 3.39 1 0.017 -40 0.23 -88 10.6 18.0 0.46 -69 3.50 -34 0.017 -82 0.25 -119 10.9 TA = 25oC, V+ = 8 V, I+ = 50% IDSS Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly Diagram.” The S-parameters are also available on floppy disk and the world wide web. P AR AM ETER RF CHARACTERISTICS TES T C ONDITIONS TYP UNIT 11 dB Gp Pow er gain f = 6 to 18 GHz SWR (in) Input s ta nding w a ve ratio f = 6 to 18 GHz 4.5:1 SWR (out) Output s ta nding w ave ratio f = 6 to 18 GHz 2.2:1 P 1dB Output pow er at 1–dB ga in compre s s ion f = 6 to 18 GHz IP 3 Output third-orde r inte rce pt point * - 27 dBm f = 10 GHz 36.7 dBm f = 18 GHz 36.7 TA = 25oC, V+ = 8 V, I+ = 50% IDSS * The TGA8014-SCC is intended strictly for use in a balanced configuration. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGA8014-SCC P A R A M E TE R THERMAL INFORMATION R θJ C TE S T C O N D IT IO N The rmal res is ta nc e (channe l to bac ks ide ) V + = 8 V, I+ = 50% IDS S N O M UN IT 30 °C/W EQUIVALENT SCHEMATIC RECOMMENDED ASSEMBLY DIAGRAM ________ RF connections: Bond two 1-mil diameter, 25-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability. Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGA8014-SCC MECHANICAL DRAWING GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6