TRIQUINT TGA8014

Product Data Sheet
6 - 18 GHz Power Amplifier
TGA8014-SCC
Key Features and Performance
•
•
•
•
•
•
6 to 18 GHz Frequency Range
11 dB Typical Gain
Greater Than 0.5 Watt Output Power at
1 dB Gain Compression
Designed for Balanced Configuration
Unconditionally Stable
3.6068 x 1.9304 x 0.1016 mm (0.142 x
0.076 x 0.004 in.)
Description
The TriQuint TGA8014-SCC is a two-stage GaAs monolithic medium power
amplifier. Reactively matched 914 um and 1219 um FETS provide 11 dB nominal
gain with 16 percent typical power-added efficiency and output power at 1 dB gain
compression of 0.5 watt. Ground is provided to the circuitry through vias to the
backside metallization.
The small size and inherent reliability advantages of a monolithic device over a
hybrid design make this device attractive for use in a variety of military applications.
Used in a balanced configuration, the TGA8014-SCC effectively addresses
applications such as driver and power stages in EW amplifiers, local oscillator
buffers, and TWT replacement amplifiers.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermcompression and thermosonic wirebonding processes. The TGA8014-SCC is supplied in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet
TGA8014-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
TGA8014-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
TGA8014-SCC
TYPICAL S-PARAMETERS
S 21
S 11
F R EQUENC Y
S 12
S 22
ANG
M AG
ANG
M AG
3.55
29
0.002
167
3.69
-34
0.005
150
GAIN
(GHz)
M AG
ANG
M AG
ANG
(dB)
6.0
0.55
176
6.5
0.58
173
0.36
4
11.0
0.41
-35
11.3
7.0
0.66
168
3.73
-80
0.006
135
0.48
-73
11.4
7.5
0.73
160
3.98
-120
0.008
119
0.55
-105
12.0
8.0
0.77
150
4.25
-159
0.010
96
0.58
-135
12.6
8.5
0.79
142
4.36
163
0.010
77
0.57
-160
12.8
9.0
0.79
134
4.31
127
0.009
54
0.52
179
12.7
9.5
0.79
127
4.09
93
0.008
33
0.45
164
12.2
10.0
0.80
120
3.81
62
0.006
10
0.40
153
11.6
10.5
0.81
113
3.55
33
0.005
-10
0.38
143
11.0
11.0
0.82
105
3.39
8
0.004
-42
0.36
131
10.6
11.5
0.84
97
3.32
-18
0.004
-82
0.36
119
10.4
12.0
0.85
87
3.32
-42
0.004
-122
0.36
105
10.4
12.5
0.87
77
3.40
-68
0.005
-133
0.37
87
10.6
13.0
0.86
66
3.49
-94
0.006
-152
0.37
70
10.8
13.5
0.85
54
3.70
-121
0.010
180
0.40
52
11.4
14.0
0.82
40
3.89
-151
0.011
155
0.42
30
11.8
14.5
0.76
27
3.92
178
0.012
136
0.42
8
11.9
15.0
0.68
14
3.78
146
0.014
111
0.38
-13
11.6
15.5
0.60
6
3.59
118
0.014
78
0.31
-27
11.1
16.0
0.55
-4
3.43
89
0.015
39
0.28
-37
10.7
16.5
0.52
-16
3.32
59
0.010
-8
0.27
-51
10.4
17.0
0.47
-26
3.28
32
0.009
-4
0.23
-68
10.3
17.5
0.47
-43
3.39
1
0.017
-40
0.23
-88
10.6
18.0
0.46
-69
3.50
-34
0.017
-82
0.25
-119
10.9
TA = 25oC, V+ = 8 V, I+ = 50% IDSS
Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly
Diagram.” The S-parameters are also available on floppy disk and the world wide web.
P AR AM ETER
RF CHARACTERISTICS
TES T C ONDITIONS
TYP
UNIT
11
dB
Gp
Pow er gain
f = 6 to 18 GHz
SWR (in)
Input s ta nding w a ve ratio
f = 6 to 18 GHz 4.5:1
SWR (out)
Output s ta nding w ave ratio
f = 6 to 18 GHz 2.2:1
P 1dB
Output pow er at 1–dB ga in compre s s ion
f = 6 to 18 GHz
IP 3
Output third-orde r inte rce pt point
*
-
27
dBm
f = 10 GHz
36.7
dBm
f = 18 GHz
36.7
TA = 25oC, V+ = 8 V, I+ = 50% IDSS
* The TGA8014-SCC is intended strictly for use in a balanced configuration.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
TGA8014-SCC
P A R A M E TE R
THERMAL INFORMATION
R θJ C
TE S T C O N D IT IO N
The rmal res is ta nc e (channe l to bac ks ide ) V + = 8 V, I+ = 50% IDS S
N O M UN IT
30
°C/W
EQUIVALENT SCHEMATIC
RECOMMENDED
ASSEMBLY DIAGRAM
________
RF connections: Bond two 1-mil diameter, 25-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.
Close placement of external components is essential to stability.
Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
TGA8014-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6