TRIQUINT TGA8622-SCC

Product Data Sheet
2 - 20 GHz Gain Block Amplifier
TGA8622-SCC
Key Features and Performance
•
•
•
•
•
•
2 to 20 GHz Frequency Range
7.5 dB Gain with Greater than 30dB
Gain-Control Capability
20 dBm Output Power at 1 dB Gain
Compression
7 dB Noise Figure
Input and Output SWR 1.7:1 Midband
2.769 x 2.159 x 0.152 mm (0.109 x
0.085 x 0.006 in.)
Description
The TriQuint TGA8622-SCC is a broadband general-purpose amplifier that operates
over the 2 to 20 GHz frequency range. Six 200um dual-gate FETs provide the
amplifier with a typical gain of 7.5 dB. Midband input and output SWRs are typically
1.7:1. This amplifier is directly cascadable and can be used in both gain control and
active temperature compensation applications. Ground is provided to the circuitry
through vias to the backside metallization.
The TGA8622-SCC is available in chip form and is readily assembled using
automated equipment. The device bond pads and backside are gold plated for
compatibility with eutectic alloy attach methods as well as thermocompression and
thermosonic wire-bonding processes.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet
TGA8622-SCC
TYPICAL
SMALL-SIGNAL
POWER GAIN
Gp vs. VCTRL
VCTRL for particular gain levels is shown for reference only and may vary from device to device.
TYPICAL
NOISE FIGURE
NF vs. VCTRL
TYPICAL
OUTPUT POWER
P1dB vs. VCTRL
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
TGA8622-SCC
TYPICAL
RETURN LOSS
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+………………………………………………………………………………….8 V
Positive supply voltage range w ith respect to negative supply voltage, V+ - V-………………………0 V to 12 V
Negative supply voltage range, V-………………………………………………………………………… 0 V to -5 V
Gain control voltage range, V CTRL……………………………………………………………………………-5 V to 4 V
Gain control voltage range w ith respect to positive supply voltage, V CTRL……………………………. 0 V to -10 V
Positive supply current, I+…..……………………………………………………………………………….370 mA
Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *…………………………………… 2.9 W
Operating Channel temperature, TCH **………………………………………………………………………150oC
Mounting temperature (30 sec.), TM…………………………………………………………………………320oC
Storage temperature range, TSTG……………………………………………………………………………-65 to 150oC
Ratings over operating channel temperature range, TCH (unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25oC base-plate temperature, derate linearly at the rate of 6.1 mW/oC.
** Operating channel temperature (TCH) w ill directly affect the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
TGA8622-SCC
TYPICAL S-PARAMETERS
F re que nc y
S 11
S 21
S 12
S 22
GAIN
(GHz)
M AG
ANG(°)
M AG
ANG(°)
M AG
ANG(°)
M AG
ANG(°)
(dB)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
0.18
0.14
0.10
0.07
0.09
0.12
0.14
0.16
0.17
0.18
0.17
0.14
0.12
0.09
0.09
0.12
0.17
0.22
0.26
0.27
0.26
0.24
0.23
0.22
0.21
0.22
0.25
0.26
0.26
0.26
0.26
0.28
0.33
0.33
0.36
0.38
0.40
168
150
148
175
-160
-153
-158
-166
-177
172
163
159
159
166
-174
-161
-157
-157
-160
-162
-165
-169
-174
-178
-175
-169
-164
-162
-162
-166
-170
-172
-174
-174
-169
-167
-164
2.34
2.55
2.62
2.66
2.64
2.61
2.57
2.54
2.49
2.47
2.46
2.46
2.44
2.43
2.42
2.41
2.40
2.38
2.36
2.35
2.35
2.38
2.36
2.35
2.38
2.38
2.38
2.39
2.36
2.31
2.33
2.31
2.22
2.19
2.21
2.29
2.28
128
108
87
66
46
26
7
-12
-30
-48
-66
-84
-103
-121
-139
-158
-177
165
147
128
110
91
71
53
33
12
-8
-29
-51
-72
-93
-116
-138
-159
179
155
125
0.007
0.011
0.013
0.014
0.014
0.014
0.014
0.015
0.015
0.016
0.016
0.018
0.020
0.021
0.023
0.024
0.025
0.026
0.026
0.026
0.025
0.025
0.025
0.025
0.025
0.027
0.028
0.030
0.031
0.033
0.036
0.038
0.035
0.037
0.042
0.041
0.040
81
59
37
16
-5
-24
-37
-61
-81
-99
-118
-136
-155
-172
171
155
139
124
108
91
77
61
44
25
4
-18
-41
-62
-84
-104
-125
-146
-166
-174
163
140
119
0.08
0.15
0.17
0.19
0.19
0.18
0.17
0.14
0.11
0.07
0.08
0.11
0.15
0.17
0.18
0.17
0.16
0.15
0.13
0.12
0.13
0.14
0.17
0.17
0.14
0.10
0.06
0.02
0.07
0.13
0.19
0.25
0.31
0.36
0.37
0.29
0.28
55
-33
-81
-116
-143
-165
176
160
152
163
-166
-149
-149
-152
-153
-157
-160
-165
-167
-167
-167
-172
172
144
120
100
80
2
-122
-151
-175
159
133
114
98
95
133
7.4
8.1
8.4
8.5
8.4
8.3
8.2
8.1
7.9
7.8
7.8
7.8
7.8
7.7
7.7
7.7
7.6
7.5
7.4
7.4
7.4
7.5
7.5
7.4
7.5
7.5
7.5
7.6
7.5
7.3
7.3
7.3
6.9
6.8
6.9
7.2
7.1
TA = 25oC, V+ = 6 V, VCTRL = 1.5 V, I+ = 50% IDSS
The reference planes for S-parameter data include bond wires as specified in the equivalent schematic.
The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
TGA8622-SCC
RF CHARACTERISTICS
TES T C ONDITIONS
TYP
UNIT
GP
Sma ll-s igna l pow e r ga in
P AR AM ETER
f = 2 to 20 GHz
7.5
dB
SWR (in)
Input s ta nding w a ve ra tio
f = 2 to 10 GHz
f = 10 to 20 GHz
1.3:1
1.7:1
-
f
f
f
f
f
f
f
f
1.3:1
1.7:1
20
17
7
33
33
30
-
SWR (out) Output s ta nding w a ve ra tio
P 1dB
Output pow e r a t 1–dB ga in c ompre s s ion
NF
Nois e figure
IP 3
Output third–orde r inte rc e pt point
= 2 to 10 GHz
= 10 to 20 GHz
= 2 to 18 GHz
= 18 to 20 GHz
= 2 to 20 GHz
= 2 GHz
= 10 GHz
= 18 GHz
dBm
dB
dBm
TA = 25oC, V+ = 6 V, VCTRL = 1.5 V, I+ = 50% IDSS
DC CHARACTERISTICS
P AR AM ETER
IDS S
TES T C ONDITIONS
M IN M AX UNIT
Ze ro–ga te –voltage dra in current at s a tura tion V DS = 0.5 V to 3.5 V, V GS = 0 V 156 444
mA
TA = 25oC
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.
EQUIVALENT
SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
TGA8622-SCC
6V
RECOMMENDED
BIAS CIRCUIT
RF connections: Bond using two 1.0-mil diameter, 20-mil-length gold bond wires at both RF Input and
RF Output.
Measuring IDSS: Set V-, V+, and VCTRL to 0 V. Connect VCTRL to V+. Short V- to ground.
Increase V+, VCTRL from 0 V and measure I+ maximum for V+, VCTRL </= 4 V. I+ maximum is IDSS.
Maximum gain bias (in this sequence):
Set V- to -1 V, V+ to 6 V, and VCTRL to 1.5 V. Adjust V- to achieve I+ = 50% IDSS.
Gain reduction: Set bias for maximum gain condition and decrease VCTRL from 1.5 V.
(I+ will drop accordingly; do not re-adjust V-.)
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
TGA8622-SCC
MECHANICAL
DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7