Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression 6 dB Typical Noise Figure 4.140 x 3.175 x 0.102 mm (0.163 x 0.125 x 0.004 in.) Description The TriQuint TGA6345-EEU is a monolithic amplifier which operates over the 2 to 18 GHz Frequency range. This device consist of three cascaded distributed amplifier sections. Typical small signal gain is 23 dB, which is adjustable by using the control voltage, VCTRL. The TGA6345-EEU provides 22 dBm typical output power at 1 dB gain compression. The TGA6345-EEU is suitable for a variety of applications such as phased array radar's and wide-band electronic warfare systems including jammers and expendable decoys, and electronic counter measures. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermosonic wire bonding processes. Ground is provided to the circuitry through vias to the backside metallization. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGA6345-EEU TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGA6345-EEU TYPICAL S-PARAMETERS S 21 S 11 Fre que nc y (GHz) M AG ANG(o) 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.71 0.50 0.35 0.31 0.27 0.21 0.12 0.01 0.13 0.22 0.25 0.24 0.22 0.14 0.07 0.02 0.13 0.18 0.20 0.16 0.20 -45 -67 -97 -131 -171 147 104 -11 -156 162 115 66 12 -44 -94 -46 -12 -61 -116 -160 -174 S 12 MAG ANG(o) 0.39 8.52 21.40 14.81 15.56 15.66 15.44 14.74 13.81 13.19 13.11 14.26 15.70 16.07 16.07 16.00 16.30 14.18 12.09 13.16 12.08 75 -34 131 18 -72 -159 116 34 -46 -123 162 85 2 -83 -170 103 8 -86 -172 92 -6 S 22 GAIN M AG ANG(o) M AG ANG(o) (dB ) 0.000 0.000 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.001 0.001 0.001 0.002 0.002 0.002 0.003 0.001 0.003 0.002 0.003 0.005 -177 129 117 106 96 89 96 120 130 121 123 168 -160 -169 -174 -177 -166 164 169 3 -76 0.94 0.40 0.19 0.14 0.08 0.07 0.07 0.11 0.18 0.22 0.21 0.17 0.16 0.23 0.24 0.19 0.21 0.27 0.29 0.37 0.18 -74 -137 102 149 143 154 173 -176 174 154 132 126 135 135 116 115 113 106 91 39 -51 -8.2 18.6 26.6 23.4 23.8 23.9 23.8 23.4 22.8 22.4 22.4 23.1 23.9 24.1 24.1 24.1 24.2 23.0 21.7 22.4 21.6 Reference planes for S-parameter data include bond wires as specified in the “Recommended Bias Network”. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGA6345-EEU RF CHARACTERISTICS P AR AM ETER TES T C ONDITIONS TYP UNITS GP Sma ll–s ignal pow er gain SWR(in) Input s ta nding w ave ra tio SWR(out) Output s tanding w a ve ra tio NF Nois e Figure f = 2 to 18 GHz f = 2 to 18 GHz f = 2 to 18 GHz f = 2 to 10 GHz f = 10 to 18 GHz f = 2 to 18 GHz f = 2 GHz f = 6 GHz f = 9 GHz f = 12 GHz f = 18 GHz fo = 2 GHz fo = 4 GHz fo = 6 GHz fo = 9 GHz fo = 2 GHz fo = 4 GHz fo = 6 GHz fo = 9 GHz fo = 2 GHz fo = 4 GHz fo = 6 GHz fo = 2 GHz fo = 4 GHz 23 1.6:1 1.6:1 5.5 7.5 22 31.0 33.0 32.5 31.5 32.5 37.0 40.0 40.5 46.5 -23.0 -26.5 -23.5 -27.5 -34.5 -25.0 -23.5 -58 -47 dB – – dB P 1dB Output pow e r a t 1–dB gain compres s ion IP 3 Output third–orde r inte rce pt point Output s e cond–orde r inte rce pt point Output s e cond harmonic a t 1–dB gain c ompres s ion Output third ha rmonic a t 1–dB gain c ompres s ion Output fourth ha rmonic a t 1–dB ga in c ompres s ion dBm dBm dBm dBc dBc dBc V+ = 7 V, VCNTL = 0 V, I+ = 50% IDSS, TA = 25oC DC CHARACTERISTICS P AR AM ETER IDS S Tota l ze ro–ga te–volta ge dra in c urre nt a t s a tura tion TES T C ONDITIONS V GS = 0, V DS 1 ≤ 5.0 V GS = 0, V DS 2 ≤ 4.0 V GS = 0, 0.5V to 3.5V M IN TYP M AX UNIT 342 684 1026 mA TA = 25oC VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGA6345-EEU RF connections: Bond two 1-mil diameter, 25-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability. Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGA6345-EEU GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6