CHA3063 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 24 Main Feature dBS21 20 § § § § § Gain Rlosses & NF ( dB ) 16 Broad band performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, ± 1dB gain flatness PAE:11%@P-1dB typical Chip size : 1.33 x 0.910x 0.1mm 12 8 NF 4 0 -4 -8 dBS11 -12 dBS22 -16 -20 -24 2 4 6 8 10 12 14 16 18 20 Frequency ( GHz ) On wafer typical measurements Main Characteristics Tamb = +25°C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min Typ 5.5 Max 23 Unit GHz 18 19 dB +18 +20 dBm Id_small_signal Bias current 160 210 mA ESD Protection : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA30632263 -20-Sept.-02 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 22 24 5.5-23GHz Driver Amplifier CHA3063 Electrical Characteristics on wafer Tamb = +25°C, Vd1 = Vd2 =4V Vg tuned for Id=160mA (around –0.27V) Symbol Fop G ∆G Is Parameter Min Operating frequency range 5.5 Small signal gain 18 Typ Small signal gain flatness Max Unit 23 GHz 19 dB ±1.0 dB 35 dB Reverse isolation P1dB CW output power at 1dB compression (1) +16 +18 dBm Psat Saturated Output Power (Pin=0dBm) +18 +21 dBm IP3 3 rd order intercept(2) 28 dBm VSWRin Input VSWR 2.0:1 2.5:1 Output VSWR 2.0:1 2.5:1 Noise figure 4.5 6 dB Id_small signal Bias current 160 210 mA VSWRout NF (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vds Drain bias voltage_small signal 5.0 V Ids Drain bias current_small signal 210 mA Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current 0.7 mA Vgd Maximun negative gate drain Voltage (Vg-Vd) -5 V Pin Maximum continuous input power Maximum peak input power overdrive (2) +1 +15 dBm dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref : DSCHA30632263 -20-Sept.-02 2/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.5-23GHz Driver Amplifier CHA3063 Typical Scattering Parameters ( On wafer Sij measurements) Bias Conditions : FREQ GHz 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 19,0 20,0 21,0 22,0 23,0 24,0 25,0 26,0 27,0 28,0 29,0 30,0 S11 dB -0,3 -0,7 -3,4 -5,7 -7,9 -9,0 -11,3 -13,5 -14,3 -14,0 -13,2 -13,2 -15,3 -16,7 -21,2 -18,6 -19,8 -18,8 -20,8 -19,8 -15,4 -14,2 -11,5 -11,6 -3,9 -2,0 -1,3 -1,3 -1,3 -1,2 Vd1,2= 4V, Vg = -0.27V, Id = 160 mA. S11 /° -35,6 -75,6 -113,7 -140,7 -170,3 162,5 121,8 82,5 39,7 0,9 -34,0 -62,6 -95,8 -125,2 -125,5 -140,0 -124,7 -172,0 101,6 23,1 -14,7 -34,2 -43,5 -30,9 -46,7 -74,8 -99,2 -115,8 -128,4 -140,1 S12 dB -60,9 -63,1 -54,5 -53,1 -43,5 -44,2 -41,0 -38,7 -37,6 -37,1 -36,7 -35,6 -36,0 -35,0 -34,7 -36,4 -36,4 -38,5 -37,4 -35,2 -34,0 -33,8 -35,3 -33,1 -34,9 -35,3 -39,7 -33,9 -32,3 -28,7 Ref : DSCHA30632263 -20-Sept.-02 S12 /° 84,0 142,8 -53,2 138,2 67,4 34,7 13,6 -16,7 -39,6 -61,4 -82,9 -107,7 -126,6 -148,4 -175,9 170,4 137,3 135,9 154,6 125,8 101,5 71,7 46,5 -0,4 -86,0 -172,0 157,6 138,6 128,4 96,4 S21 dB -12,7 -13,7 11,6 15,2 16,4 18,8 19,3 18,9 19,1 19,3 19,5 19,6 19,5 19,2 18,5 18,2 18,1 18,1 18,0 18,0 18,2 18,9 19,5 20,4 17,6 10,9 3,9 -3,5 -12,1 -21,0 3/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 /° 86,9 -179,2 123,1 58,5 19,0 -12,3 -46,9 -75,2 -100,4 -125,2 -150,7 -175,1 159,3 133,1 111,1 89,1 70,4 44,3 22,0 -2,5 -26,4 -57,7 -89,3 -144,0 153,9 104,5 69,9 44,6 29,3 47,7 S22 dB -0,6 -1,4 -4,7 -6,2 -7,4 -11,1 -12,0 -11,6 -12,9 -14,4 -13,7 -13,5 -11,9 -11,9 -13,1 -14,7 -19,5 -17,4 -18,5 -19,4 -23,3 -21,4 -16,9 -6,3 -3,1 -3,2 -4,3 -4,7 -5,0 -5,9 Specifications subject to change without notice S22 /° -35,0 -67,7 -93,2 -111,6 -133,3 -149,1 -155,1 -173,2 171,7 165,8 164,9 148,9 131,3 116,0 95,0 79,9 72,4 72,2 57,4 47,4 32,5 76,8 77,6 46,6 -13,3 -59,0 -90,9 -113,7 -133,9 -153,6 5.5-23GHz Driver Amplifier CHA3063 Typical ON JIG MEASUREMENTS (deembedded) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA GAIN & RLOSS MEASUREMENTS IN TEST JIG 25 S21 19 Gain/Rlosses (dB) 13 7 1 -5 S22 -11 -17 S11 -23 -29 -35 1 3 5 7 9 11 13 15 17 19 21 23 25 27 FREQ (GHz) POWER MEASUREMENTS IN TEST JIG (deembedded) 30 25 Linear Gain 20 Psat (Glin-3dB) 20 15 P-1dB 15 10 PAE @ 1 db compression 10 5 5 0 0 -5 4 6 8 10 12 14 16 18 20 22 FREQ (GHz) Ref : DSCHA30632263 -20-Sept.-02 4/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24 Gain (dB) OUTPUT POWER (dBm) / PAE 25 5.5-23GHz Driver Amplifier CHA3063 Typical ON JIG POWER MEASUREMENTS (deembedded) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA FREQ: 6 GHz 25 500 20 400 Gain 350 15 300 250 Pout 10 Id (mA) Pout (dBm) / Gain (dB) / PAE (%) 450 200 Id 5 150 100 PAE 50 0 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pin (dBm) FREQ: 20GHz 25 500 450 400 Gain 350 15 300 250 Pout 10 Id(mA) Pout (dBm) / Gain (dB) / PAE (%) 20 200 150 Id 5 100 50 PAE 0 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pin (dBm) CHA3063 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 Id=160mA @ 23.5GHz ∆ f=10MH z 85 IP3 # 28.5dBm 75 65 Fundamental 55 3rd order 45 IM3 H3 35 H1 IM3(dBc) Output power (dB) V d=4V 25 F2 + ( F2-F1 ) Df=10MHz 15 F2 Df=10MHz 5 IM3 -5 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Input power (dBm) Ref : DSCHA30632263 -20-Sept.-02 5/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.5-23GHz Driver Amplifier CHA3063 Chip Assembly and Mechanical Data Note :Supply recommended feed should be capacitively bypassed. 25µm diameter gold wire Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers) Ref : DSCHA30632263 -20-Sept.-02 6/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice is 5.5-23GHz Driver Amplifier CHA3063 Ordering Information Chip form : CHA3063-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA30632263 -20-Sept.-02 7/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09