CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. A B.I.T. ( Build In Test ) monitors a DC voltage that is representative of the microwave output power. IN OUT Vg1 Vg2 The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. ■ Broadband performances : 20-40GHz ■ 20dBm output power. ■ 22dB gain ■ Very good broadband input matching ■ On chip output power level DC detector ■ Low DC power consumption, 330mA @ 3.5V ■ Chip size : 0.83 X 1.72 X 0.10 mm Vg 3 Vdet Vg4 Typical on wafer measurements : 30 20 10 Gain & RLoss (dB) Main Features Vd2,3,4 Vd1 0 S22 -10 S11 -20 -30 -40 15 20 25 30 35 40 45 FREQ (GHz) Input Rloss : solid line & output Rloss : dash line. Main Characteristics Tamb. = 25°C Parameter Fop G P03 Id Min Typ Max Unit 40 GHz Operating frequency range 20 Small signal gain 18 20 dB Output power at 3dB gain compression 20 22 dBm Bias current 330 400 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA30932158 -07-June-02 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 50 20-40GHz Medium Power Amplifier CHA3093c Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA Symbol Fop Parameter Min Operating frequency range (1) 20 G Small signal gain [ 20GHz to 35GHz](1) 20 G Small signal gain (1) 18 ∆G Small signal gain flatness (1) (Any 1GHz BW) Is Reverse isolation (1) Typ Max Unit 40 GHz 22 dB dB ±0.5 dB 50 dB P1dB Pulsed output power at 1dB gain compression (1) 18 20 dBm P3dB Pulsed output power at 3dB gain compression (1) 20 22 dBm rd IP3 3 order intercept point 29 dBm PAE Power added efficiency at saturation 10 % VSWRin VSWRout NF Vdet Id Input VSWR (1) 1.2:1 2.0:1 Output VSWR (1) 2.0:1 3.0:1 Noise figure 8.0 10.0 Detected voltage : at 25GHz @ Pout=20dBm (2) Detected voltage : at 38GHz @ Pout=20dBm (2) 0.65 0.45 Bias current (small signal) 330 dB V V 400 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less. (2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad. Absolute Maximum Ratings (1) Symbol Parameter Values Unit Vds Drain bias voltage_small signal (2) 4.0 V Ids Drain bias current_small signal 470 mA Vgs Gate bias voltage -2 to +0.4 V Vdg Drain Gate voltage (Vds – Vgs) +5 V Pin Maximum continuous input power (2) +4 (@ 20GHz) -1 (@ 40GHz) +15 dBm dBm Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Maximum peak input power overdrive (3) Ta Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA30932158 -07-June-02 2/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : S11 Freq GHz 2,00 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 48,00 50,00 52,00 54,00 56,00 58,00 60,00 Vd1,2,3,4 = 3.5 Volt, Vg1=Vg2,3,4 for Id total = 330 mA. mod dB -9,77 -9,97 -10,97 -12,23 -13,30 -14,19 -15,25 -16,90 -18,45 -18,27 -20,55 -20,72 -29,56 -23,58 -21,33 -21,32 -22,06 -22,21 -19,66 -17,80 -17,46 -15,16 -15,09 -14,57 -13,80 -13,55 -12,80 -12,55 -12,64 -12,53 -11,23 -10,73 -10,79 -10,93 -10,92 -11,37 -8,41 -5,96 -3,89 -2,88 -2,21 -2,02 -1,87 S12 pha /° 166,10 159,94 144,60 141,58 132,93 127,48 119,12 109,51 101,39 99,66 75,06 49,52 58,15 58,28 29,56 -8,76 -29,59 -31,27 -44,67 -56,40 -61,68 -70,64 -83,96 -89,19 -92,45 -97,98 -102,27 -108,34 -110,41 -108,87 -110,01 -118,61 -124,01 -121,39 -125,62 -121,74 -103,89 -119,91 -131,50 -146,98 -160,52 -173,49 175,37 Ref. : DSCHA30932158 -07-June-02 mod dB -79,63 -78,88 -63,16 -67,81 -76,00 -69,79 -68,09 -56,64 -77,66 -54,79 -69,47 -57,54 -54,03 -56,11 -54,05 -62,57 -63,41 -56,43 -59,88 -58,46 -56,48 -52,06 -56,43 -59,91 -54,72 -54,97 -54,75 -54,06 -53,05 -50,99 -52,73 -56,04 -56,86 -52,92 -52,23 -60,67 -53,21 -58,10 -52,69 -60,21 -52,63 -55,84 -49,76 S21 pha /° 85,41 19,46 -150,36 -92,96 168,10 162,87 -141,61 151,79 -40,17 30,38 -61,55 -51,49 -168,51 107,75 67,67 -37,46 -139,56 165,63 138,12 132,33 154,53 105,41 63,48 89,24 94,43 59,43 93,32 58,24 50,25 30,11 3,78 22,66 -6,86 -31,58 -85,31 -166,71 -121,20 116,39 160,04 15,97 159,63 -175,77 95,59 3/10 mod dB -44,50 -45,28 -32,41 -30,97 -39,55 -12,99 4,59 14,64 20,56 23,06 23,87 24,20 23,40 22,98 22,93 23,05 22,56 21,93 22,19 21,80 21,36 21,50 20,88 20,82 20,70 20,47 20,11 19,72 19,84 19,49 19,40 18,88 18,38 18,36 18,33 17,03 13,67 6,60 -0,07 -7,50 -16,29 -29,86 -23,82 S22 pha /° 11,25 64,07 -15,70 -73,10 -81,72 -8,19 -92,82 166,69 66,78 -25,87 -67,24 -106,39 -146,58 -173,95 156,61 125,30 96,27 70,69 43,16 16,81 -6,65 -31,90 -56,82 -81,12 -104,79 -129,10 -154,27 -177,11 159,83 133,90 108,31 81,37 56,83 32,20 -0,36 -37,26 -104,46 -158,83 156,43 118,68 95,16 112,18 170,18 mod dB -0,06 -0,17 -0,26 -0,19 -0,32 -0,95 -3,13 -6,28 -12,44 -11,02 -8,60 -7,90 -10,21 -10,20 -10,87 -11,82 -13,75 -13,72 -13,95 -15,15 -15,78 -15,57 -20,24 -19,36 -18,36 -20,65 -17,69 -18,18 -15,31 -13,49 -11,73 -11,60 -10,29 -8,52 -7,30 -7,39 -4,69 -3,75 -3,23 -2,74 -2,57 -2,56 -2,53 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 pha /° -16,47 -32,94 -48,70 -66,41 -86,37 -109,99 -134,29 -148,92 -152,39 -127,42 -138,79 -148,31 -167,46 -161,72 -166,58 179,69 179,91 -176,79 168,88 167,61 157,73 137,58 133,08 132,46 101,23 80,50 61,37 37,45 24,91 5,75 -9,23 -21,67 -23,61 -33,55 -45,47 -51,37 -68,35 -85,06 -99,24 -112,94 -124,78 -135,15 -145,16 20-40GHz Medium Power Amplifier CHA3093c Typical On wafer Power CW Measurements Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA Ref. : DSCHA30932158 -07-June-02 4/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier Ref. : DSCHA30932158 -07-June-02 5/10 CHA3093c Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Typical IN TEST JIG Power Measurements in temperature Note : Jig losses included (1 dB) Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA Ref. : DSCHA30932158 -07-June-02 6/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier Ref. : DSCHA30932158 -07-June-02 7/10 CHA3093c Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Typical Bias Tuning The circuit schematic is given below : Vd1 Vd 2,3,4 IN OUT Vg1 Vg 2 Vg 3,4 Vdet For medium power operation, the four drain biases are connected altogether. In a same way, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 300mA. A separate access to the gate voltages of the two first stages ( Vg1,2 ) is provided in order to be able to tune the first stages for the application, as a lower noise amplifier or a multiplier. An additional pad is provided for monitoring the output power, using the Build In Test. This access, when connected to an external resistor of 10 kOhm ( typical value ) provides a DC voltage which follows the output power level. On wafer power measurements versus output power Ref. : DSCHA30932158 -07-June-02 8/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions. ( Chip thickness : 100µm.all dimensions are in micrometers) Number Size (x,y) µm Center position (x,y) µm (Refered to bottom left origin) 773 / 689 1 34 / 98 2 48 / 68 68 /34 3 98 / 34 800 / 43 4 34 / 98 1237/ 73 Pickup Pillow Ref. : DSCHA30932158 -07-June-02 9/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3093c Ordering Information Chip form : CHA3093c99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHA30932158 -07-June-02 10/10 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09