CHA5297 37-40GHz High Power Amplifier GaAs Monolithic Microwave IC Vd1 Description The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Vd2 Vg3 Vd3 IN The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. OUT Vg1 Vg2 Vd2 Vg3 Vd3 Main Features ■ Performances : 37-40GHz ■ 28dBm output power @ 1dB comp. gain ■ 10 dB ± 1dB gain ■ DC power consumption, 1.6A @ 3.5V ■ Chip size : 4.16 x 2.6 x 0.05 mm Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 37 40 GHz G Small signal gain 10 dB P1dB Output power at 1dB gain compression 28 dBm Id Bias current 1.6 A ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52972149 - 29-May-02 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 37-40GHz High Power Amplifier CHA5297 Electrical Characteristics Tamb = +25°C, Vd = 3.5V Id =1.6A Symbol Fop Parameter Min Operating frequency range (1) G ∆G Is P1dB P03 VSWRin Typ 37 Max Unit 40 GHz Small signal gain (1) 10 dB Small signal gain flatness (1) ±1 dB Reverse isolation 40 dB Pulsed output power at 1dB compression (1) 28 dBm Output power at 3dB gain compression (1) 29 dBm Input VSWR (2) 3:1 VSWRout Output VSWR (2) 3.5:1 Tj Junction temperature for 80°C backside 152 Id Bias current @ small signal 1.6 °C 2 A (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage with Pin max=18dBm +4.0 V Id Maximum drain bias current 2.2 A Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current -5.5 to +5.5 mA Vdg Maximum drain to gate voltage (Vd - Vg) +6.0 V Pin Maximum input power overdrive (2) +22 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52972149 - 29-May-02 2/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 37-40GHz High Power Amplifier CHA5297 Chip Assembly and Mechanical Data To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed 10nF 10nF 120pF 120pF 120pF 120pF RF IN RF OUT 120pF 120pF 120pF 10nF 120pF 10nF To Vg1,2,3 DC Gate supply feed To Vd3 DC Drain supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52972149 - 29-May-02 3/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 37-40GHz High Power Amplifier CHA5297 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 50µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5297-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52972149 - 29-May-02 4/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice