SUBMINIATURE PHOTOINTERRUPTER MIT-4A11B Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. Package Dimensions 2 C E 3 1 A C 4 Unit : mm Features l l l l Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 1.2mm `4.2 4.2 (0.3) 1.5 1.2 (1.0) 2.8 3.9 5.2 Applications l l l Cameras Floppy disk drives Printer 1.5±0.1Hold ± 4.0 MIN. 4-0.5 4-0.15 *2.54 *3.2 NOTE Absolute Maximum Ratings Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Soldering temperature 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Burr's dimension : 0.15MAX 3.( ) : Reference dimensions 4. The dimensions indicated by * refer to those measured from the lead base @TA =25 ℃ Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Tsol Maximum Rating 50 5 75 30 5 75 100 -25℃ to + 85℃ -40℃ to + 100℃ Unit mA V mW V V mW mW 260oC for 3 seconds Unity Opto Technology Co., Ltd. 01/30/2002 MIT-4A11B Optical-Electrical Characteristics @TA =25℃ Parameter Forward Voltage Reverse Current Collector Dark Current symbol VF IR Iceo Output Collector Emitter Saturation Voltage VCE(SAT) Collector Current Ic (on) tr Transfer Cha- Response Time (RISE) tf racteristics Response Time (FALL) Input Min. Typ. 1.2 0.6 50 50 Max. 1.4 10 100 Unit. Test Conditions IF =20mA V µA VR =3V nA Vce =10V 0.4 5.0 150 150 V mA µS µS Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V Ic=100µA, Vce =5V RL=1KΩ 60 120 50 100 40 30 20 10 0 -25 0 25 50 75 100 Power Dissipation (mW) Forward Current IF (mA) Typical Optical-Electrical Characteristic Curves PTOT 80 PD , PC 60 40 20 0 -25 80 60 40 20 0 1.6 2.0 2.4 2.8 Collector Current Ic (mA) Forward Current IF (mA) 100 1.2 20mA IF=15mA 10mA 4mA 0 2 4 6 8 10 75 100 Vce=2V Ta=25℃ 2.4 2.0 1.6 1.2 0.8 0.4 0 0 5 10 15 20 25 30 Forward Current IF (mA) Fig.4 Collector Current vs Forward Current 12 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Relative Collector Current (%) Collector Current Ic (mA) Ta=25℃ 50 2.8 Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 25 Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature 0.8 0 120 100 80 60 40 20 0 -25 0 25 50 75 100 o Ambient Temperature TA ( C ) Fig.6 Relative Collector Current VS. TA Unity Opto Technology Co., Ltd. 01/30/2002 MIT-4A11B 10000 1000 VCE=20V Response Time (µs) Collector Dark Current ICEO Typical Optical-Electrical Characteristic Curves 1000 100 10 25 50 75 100 Ta=25 ℃ 10 1 0.1 0.01 1 0 V CE =2V I C =100 µ A 100 Ambient Temperature TA ( ℃ ) Fig.7 Collector Dark Current vs. Ambient Temperature Relative Sensitivity (%) 100 0.1 1 10 100 Load Resistance Rt (KΩ) Fig.8 Response Time vs. Load Resistance Response Time Measurement Circuit Ta=25℃ 80 60 Input 40 t 90 % 10 % Output 20 t tr 0 700 Input 800 900 1000 1100 tf IL 1200 VCC VR Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Output Sensing Position Characteristics (Typical) Relative light current IL (%) X 100 Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 ℃ Ta=25 ℃ (Center of optical axis) 50 X Y 0 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) + + Distance d (mm) Unity Opto Technology Co., Ltd. 01/30/2002