SLOTTED PHOTOINTERRUPTER MIT-5A11C Description Package Dimensions Unit: mm ( inches ) The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototran- 12.8 ± 0.05 (.504) sistor built in a black plastic housing . It is a refl- 5.2 (.205) ective subminiature photointerrupter. 1 4 2 3 3.2 ± 0.15 (.126) 6.4 (.252) Features Non -contact switching l For- direct pc board or l Dual - in - line socket mounting l Fast switching speed l Choice of mounting configuration. 5.8 l 7.0 (.276) (.150) 3.8 1.72 (.068 0.5 (.020) 9.6 2.5 (.378) (.098) NOTE 1. Tolerance is ± 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25oC Parameter Symbol Maximum Rating Unit IF 50 mA Reverse Voltage VR 5 V Power Dissipation Pad 75 mW Collector-emitter breakdown voltage V(BR)CEO 30 V OUTPUT Emitter-Collector breakdown voltage V(BR)ECO 5 V PC 75 mW Total power dissipation PTOT 100 mW Operating Temperature Range Topr -25oC to +85oC Storage Temperature Range Tstg -40oC to +100oC Continuous Forward Current INPUT Collector power dissipation Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A11C Optical-Electrical Characteristics @TA =25oC Parameter Input Output symbol Min. Typ. Max. Unit. Test Conditions 1.2 1.4 V µA VR =5V IF =20mA Forward Voltage VF Reverse Current IR 10 Iceo 100 nA Vce =10V Collector Emitter VCE(SAT) 0.4 V Ic=0.1mA,Ee=0.1mW/cm2 Collector Current Ic (on) Collector Dark Current µA IF =20mA, Vce =5V 500 Transfer Cha- Response Time (RISE) tr 20 100 µS Ic=100µA, Vce =5V racteristics tf 20 100 µS RL =1k, d =1mm Response Time (FALL) 60 Power Dissipation (mW) Forward Current IF (mA) Typical Optical-Electrical Characteristic Curves 50 40 30 20 10 0 -25 0 25 50 75 120 100 PTOT 80 PD , PC 60 40 20 0 100 -25 Collector Current Ic (µA) 1000 100 10 1 Collector Current Ic (µA) 0 1 2 3 Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage 600 20mA 500 400 IF=15mA 300 10mA 200 4mA 100 0 0 2 4 6 8 10 12 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Unity Opto Technology Co., Ltd. 25 50 75 100 Vce=2V Ta=25℃ 600 500 400 300 200 100 0 0 5 10 15 20 25 30 Forward Current IF (mA) Fig.4 Collector Current vs Forward Voltage 700 Ta=25oC 0 Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature 700 4 Relative Collector Current (%) Forward Current IF (mA) Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature 120 100 80 60 40 20 0 -25 0 25 50 75 100 Ambient Temperature TA ( oC ) Fig.6 Relative Collector Current VS. TA 04/01/2002 MIT-5A11C 10-6 1000 VCE=20V Response Time (µs) Collector Dark Current ICEO Typical Optical-Electrical Characteristic Curves 10-7 10-8 10-9 10-10 0 25 50 75 Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature V CE =2V I C =100mA 100 Ta=25 ℃ 10 1 0.1 0.01 100 1 10 100 Load Resistance Rt (KΩ) Fig.8 Response Time vs. Load Resistance 100 Relative Sensitivity (%) 0.1 Response Time Measurement Circuit Ta=25℃ 80 60 Input 40 t 90 % 10 % Output 20 t tr 0 700 800 900 1000 1100 Input 1200 Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) tf IL VCC VR Output Sensing Position Characteristics (Typical) Relative light current IL (%) X 100 Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 ℃ Ta=25 ℃ (Center of optical axis) 50 X Y 0 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) + + Distance d (mm) Unity Opto Technology Co., Ltd. 04/01/2002