W55FXX SERIAL FLASH EEPROM SERIES GENERAL DESCRIPTION The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell TM of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech series. The single voltage supply eliminates the need for an extra pump circuit during programming and erasing. FEATURES • Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series • 512K/1M/2M memory sizes available • Directly cascadable for longer duration • Fast frame-write operation • − Frame (32 bits) program cycle time: 400 µS (typ.) Fast whole-chip-erase duration: 50 mS (max.) • Read data access time: 500 nS (max.) • Program/erase cycles: 10,000 (typ.) • Data retention: 10 years (typ.) • Low power consumption: − Operating: 5 mA (typ.) − Standby: 2 µA (typ.) PIN CONFIGURATION EOP 1 8 MODE CTRL 2 7 VDD VSS 3 6 CLK ADDR 4 5 DATA -1- Publication Release Date: August 1996 Revision A2 W55FXX PIN DESCRIPTION NO. PIN NAME I/O DESCRIPTION 1 EOP O End of process signal output 2 CTRL I Enable signal for program and erase operations when MODE = 0 Input clock for mode counter when MODE = 1 3 VSS I Ground 4 ADDR I Input clock for start adress shift-in 5 DATA I/O 6 CLK I Input clock for data write-in and read-out 7 VDD I Positive voltage supply 8 MODE I Mode select control pin Bidirectional data line BLOCK DIAGRAM CLK DATA shift register /address counter ADDR page-code cells /page-code flag /comparator Output Buffer POR Circuit Decoder Core Array Write-in Buffer Pump Circuit CTRL MODE EOP Control Circuit -2- W55FXX ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL CONDITION RATED VALUE UNIT Operating Temp. TOPR - 0 to +70 °C Storage Temp. TSTG - -65 to +150 °C Power Supply VDD−VSS - -0.3 to +7.0 V VDC All pins -0.5 to VDD +1.0 V VTRAN All pins -1.0 to VDD +1.0 V Input DC Voltage Transient Voltage (< 20 nS) Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. DC CHARACTERISTICS (VDD = 4.5V, VSS = 0V, TA = 25° C) PARAMETER Operating voltage SYMBOL CONDITIONS VDD - LIMITS UNIT MIN. TYP. MAX. 2.4 4.5 5.5 V - 2 4 µA - 5 10 mA VDD V (Note) Standby current ISB All inputs = GND DATA & EOP open Operating current IOP In read mode DATA & EOP open FOSC = 1 MHz Input voltage High VIH Low VIL Sink IOL Drive All input pins 2.0 -0.3 - 0.8 V VOL = 0.5V 2.5 5 - mA IOH VOH = 4.0V -2.5 -5 - mA Input leakage current of CTRL, MODE ILI1 VIN = 4.5V - - 4.5 µA Input leakage current of DATA ILI2 VIN = 0V - - -4.5 µA Output current Note: For been working with W52900, the minimum operating voltage couldn't be less than 3.6 volt. -3- Publication Release Date: August 1996 Revision A2 W55FXX AC CHARACTERISTICS (VDD = 4.5V, VSS = 0V, TA = 25° C) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT MODE pulse width TMP - 1 - - µS CTRL pulse width TWP 400 - 700 µS Clock frequency of ADDR Page coding mode FADDR - - - 1 MHz Clock frequency of CLK FCLK - - - 1 MHz Clock frequency of CTRL FCTRL - - - 1 MHz Read/Write mode 1 - - µS Interval between ADDR end & CLK begin TI Interval between CLK & CTRL TGCC Write mode 1 - - µS Interval between ADDR & CTRL TGCA Page coding mode 1 - - µS Interval between addressing end & block-erase begin TAE Block erase mode 1 - - µS Interval between MODE rising edge & CTRL clock begin TMB Mode selection 500 - - nS Interval between CTRL clock end & MODE falling edge TME Mode selection 500 - - nS Interval between MODE falling edge & another pin active TGM - 1 - - µS Data access time TRA Read mode - - 500 nS Data set up time TWS Write mode 250 - - nS TAS - 250 - - nS TRH Read mode 0 - - nS TWH Write mode 10 - - nS TAH - 10 - - nS Programming duration TPR Write mode 400 - - µS Whole-chip-erase time TWE Whole-chip-erase mode 45 - 50 mS Block-erase time TBE Block-erase mode 40 - 45 mS Data hold time -4- W55FXX TIMING WAVEFORM Read Cycle Write Cycle 1/F CLK 1/F CLK CLK CLK DATA DATA TRA TWS TWH TRH Address Shift-in Cycle Mode Select Duration 1/F ADDR ADDR MODE DATA CTRL TAS TAH TMB 1/FCTRL TME Page-code Cell Read Out Cycle 1/F CTRL CTRL DATA TRA TRH Note: The duty cycle of any clock is 50%. -5- Publication Release Date: August 1996 Revision A2 W55FXX APPLICATION CIRCUITS (for reference only) For Voice Recorder Applications W51300 EOP W55FXX ADDR ADDR EOP DATA DATA MODE CLK CLK CTRL CTRL MODE W51300 EOP W55FXX W55FXX ADDR ADDR EOP ADDR EOP ADDR EOP DATA DATA MODE DATA MODE DATA MODE CLK CLK CLK CLK CTRL CTRL CTRL CTRL MODE For PowerSpeech Applications W5280/ W52900 W55FXX ADDR ADDR EOP DATA DATA MODE CLK CLK CTRL ORDERING INFORMATION PART NO. W55FXX MEMORY SIZE W55F05 512K BITS W55F10 1M BITS W55F20 2M BITS -6- W55FXX Headquarters Winbond Electronics (H.K.) Ltd. No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5792697 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-7197006 Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27516023 FAX: 852-27552064 Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2730 Orchard Parkway, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-9436668 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-7190505 FAX: 886-2-7197502 Note: All data and specifications are subject to change without notice. -7- Publication Release Date: August 1996 Revision A2