SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY40 ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAIL BBY40 – S2 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg VALUE UNIT 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage V BR 28.0 Reverse current IR TYP. MAX. UNIT CONDITIONS. V I R = 10µA nA µA V R = 28V V R = 28V, T amb = 60°C MAX. UNIT CONDITIONS. pF pF V R = 3V, f=1MHz V R = 25V, f=1MHz 10 1.0 TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. Diode Capacitance Cd 26.0 4.3 32.0 6.0 Capacitance Ratio Cd / Cd 5.0 6.5 Series Resistance rd 0.4 0.6 Spice parameter data is available upon request for this device V R = 3V/25V, f=1MHz Ω f=200MHz at the value of V R at which C d=25pF BBY40 TYPICAL TYPICALCHARACTERISTICS CHARACTERISTICS Typical Diode Capacitance 100 10 1 0.1 1 10 Reverse Voltage 100