CZT122 SOT-223 Transistor(NPN) 1. BASE 1 SOT-223 2. COLLECTOR 3. EMITTER Features Complementary to CZT127 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 1 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1m A,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V Collector cut-off current ICBO VCB=100V,IE=0 200 uA Base cut-off current ICEO VCE=50V,IB=0 500 uA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA hFE(1) VCE=3V,IC=0.5A 1000 hFE(2) VCE=3V,IC=3A 1000 DC current gain VCE(sat)1 IC=3A,IB=12mA 2 V VCE(sat)2 IC=5A,IB=20mA 4 V Base-emitter voltage VBE(on) VCE=3V,IC=3A 2.5 V Transition frequency fT Collector-emitter saturation voltage Collector output capacitance Cob VCE=4V,IC=3A,f=1MHz VCB=10V, IE=0, f=1.0MHz 4 MHz 200 pF CZT122 SOT-223 Transistor(NPN) Typical Characteristics TypicalCharacteristics CZT122