JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD034 TRANSISTOR (PNP) TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -2.5 A Collector-base voltage V(BR)CBO: -110 V Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -110 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -7 V Collector cut-off current ICBO VCB=-100V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 µA hFE(1) VCE=-2V, IC=-100mA 100 hFE(2) VCE=-2V, IC=-1.5A 40 VCE(sat) IC=-2A, IB=-200mA -0.5 V Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V Transition frequency fT VCE=-1V, IC=-250mA, f=1MHz 560 DC current gain Collector-emitter saturation voltage CLASSIFICATION OF 3 MHz hFE(1) Rank R S T U Range 100-200 140-280 200-400 280-560 TypicalCharacteristics BD034